Comment on “Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon,” by Ju-Yin Chenget al., J. Vacuum Science and Technology A20, 1855 (2002)

2003 ◽  
Vol 21 (3) ◽  
pp. 827-827 ◽  
Author(s):  
Sjoerd Roorda
Keyword(s):  
Quantitative Analysis ◽  
Amorphous Silicon ◽  
Science And Technology ◽  
Induced Structure ◽  
Structure Disordering ◽  
Ion Implanted

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

scholarly journals Optical absorption studies of ion implanted and amorphous silicon

1994 ◽  
Vol 04 (C7) ◽  
pp. C7-113-C7-120
Author(s):  
U. Zammit ◽  
K. N. Madhusoodanan ◽  
M. Marinelli ◽  
F. Scudieri ◽  
R. Pizzoferrato ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Absorption Studies ◽  
Ion Implanted

Optical absorption of ion-implanted amorphous silicon

1988 ◽  
Vol 163 ◽  
pp. 331-335 ◽  
Author(s):  
K.L. Bhatia ◽  
W. Krätschmer ◽  
S. Kalbitzer
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Ion Implanted

Environments of ion-implanted As and Ga impurities in amorphous silicon

1992 ◽  
Vol 45 (12) ◽  
pp. 6517-6533 ◽  
Author(s):  
G. N. Greaves ◽  
A. J. Dent ◽  
B. R. Dobson ◽  
S. Kalbitzer ◽  
S. Pizzini ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Ion Implanted
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