Environments of ion-implanted As and Ga impurities in amorphous silicon

1992 ◽  
Vol 45 (12) ◽  
pp. 6517-6533 ◽  
Author(s):  
G. N. Greaves ◽  
A. J. Dent ◽  
B. R. Dobson ◽  
S. Kalbitzer ◽  
S. Pizzini ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Ion Implanted

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

scholarly journals Optical absorption studies of ion implanted and amorphous silicon

1994 ◽  
Vol 04 (C7) ◽  
pp. C7-113-C7-120
Author(s):  
U. Zammit ◽  
K. N. Madhusoodanan ◽  
M. Marinelli ◽  
F. Scudieri ◽  
R. Pizzoferrato ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Absorption Studies ◽  
Ion Implanted

Optical absorption of ion-implanted amorphous silicon

1988 ◽  
Vol 163 ◽  
pp. 331-335 ◽  
Author(s):  
K.L. Bhatia ◽  
W. Krätschmer ◽  
S. Kalbitzer
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Ion Implanted

Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

Chemical Etching of Ion Implanted Amorphous Silicon Carbide

1986 ◽  
Vol 133 (3) ◽  
pp. 650-652 ◽  
Author(s):  
J. A. Edmond ◽  
J. W. Palmour ◽  
R. F. Davis
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Chemical Etching ◽  
Amorphous Silicon Carbide ◽  
Ion Implanted
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