scholarly journals Optical absorption studies of ion implanted and amorphous silicon

1994 ◽  
Vol 04 (C7) ◽  
pp. C7-113-C7-120
Author(s):  
U. Zammit ◽  
K. N. Madhusoodanan ◽  
M. Marinelli ◽  
F. Scudieri ◽  
R. Pizzoferrato ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Absorption Studies ◽  
Ion Implanted

Optical absorption of ion-implanted amorphous silicon

1988 ◽  
Vol 163 ◽  
pp. 331-335 ◽  
Author(s):  
K.L. Bhatia ◽  
W. Krätschmer ◽  
S. Kalbitzer
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Ion Implanted

ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON

1970 ◽  
Vol 16 (5) ◽  
pp. 205-208 ◽  
Author(s):  
B. L. Crowder ◽  
R. S. Title ◽  
M. H. Brodsky ◽  
G. D. Pettit
Keyword(s):  
Optical Absorption ◽  
Absorption Studies ◽  
Ion Implanted

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Thermoluminescence and optical absorption studies of RbCl:Sr2+

1985 ◽  
Vol 10 (1-2) ◽  
pp. 93-96
Author(s):  
S.B.S. Sastry ◽  
S. Nagarajan ◽  
G. Muralidharan
Keyword(s):  
Optical Absorption ◽  
Absorption Studies

TL, EPR and Optical Absorption Studies on Natural Alexandrite Compared to Natural Chrysoberyl

2002 ◽  
Vol 100 (1) ◽  
pp. 471-474 ◽  
Author(s):  
G. M. Ferraz ◽  
S. Watanabe ◽  
S. O. Souza ◽  
R. M. F. Scalvi
Keyword(s):  
Optical Absorption ◽  
Absorption Studies
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