scholarly journals Selective Etching Of Wide Bandgap Nitrides

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. Han ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
High Density ◽  
Chamber Pressure ◽  
Rf Power ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Patterning Technique ◽  
Etch Rates ◽  
Coupled Plasmas

AbstractHigh-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are 2 to 4 orders of magnitude higher than more conventional reactive ion etch (RIE) systems. GaN etch rates exceeding 0.68 μm/min have been reported in Cl2/H2/Ar inductively coupled plasmas (ICP) at -280 V dc-bias. Under these conditions, the etch mechanism is dominated by ion bombardment energies which can induce damage and minimize etch selectivity. High selectivity etch processes are often necessary for heterostructure devices which are becoming more prominent as growth techniques improve. In this study, we will report high-density ICP etch rates and selectivities for GaN, AIN, and InN as a function of cathode power, ICP-source power, and chamber pressure. GaN:AIN selectivities > 8:1 were observed in a Cl2/Ar plasma at 10 mTorr pressure, 500 W ICP-source power, and 130 W cathode rf-power, while the GaN:InN selectivity was optimized at ∼ 6.5:1 at 5 mTorr, 500 W ICP-source power, and 130 W cathode rf-power.

scholarly journals Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

1999 ◽  
Vol 4 (S1) ◽  
pp. 823-833 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

scholarly journals Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas

1998 ◽  
Vol 537 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

AbstractPatterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 μm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3/Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AIN, and InN as a function of BCl3/C12 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AIN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

Dry and Wet Etching for Group III – Nitrides

1998 ◽  
Vol 537 ◽  
Author(s):  
I. Adesida ◽  
C. Youtsey ◽  
A. T. Ping ◽  
F. Khan ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Group Iii Nitrides ◽  
Device Fabrication ◽  
Wet Etching ◽  
Microwave Transistors ◽  
Group Iii ◽  
Inductively Coupled ◽  
Dislocation Densities ◽  
High Bond ◽  
Etch Rates

AbstractThe group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

GaN Etching in BCl3/Cl2 Plasmas

1998 ◽  
Vol 512 ◽  
Author(s):  
R. J. Shul ◽  
C. I. H. Ashby ◽  
C. G. Willison ◽  
L. Zhang ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Chemistry ◽  
High Plasma ◽  
High Density ◽  
Chamber Pressure ◽  
Plasma Etch ◽  
Source Power ◽  
Inductively Coupled ◽  
High Volatility ◽  
Gan Etching

ABSTRACTGaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaClx and NClx etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, we report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl3:Cl2 flow ratio, dc-bias, chamber pressure, and ICP source power. GaN etch rates ranging from ∼100 Å/min to > 8000 Å/min were obtained with smooth etch morphology and anisotropic profiles.

scholarly journals Dry and Wet Etching for Group III – Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 38-48 ◽  
Author(s):  
I. Adesida ◽  
C. Youtsey ◽  
A. T. Ping ◽  
F. Khan ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Group Iii Nitrides ◽  
Device Fabrication ◽  
Wet Etching ◽  
Microwave Transistors ◽  
Group Iii ◽  
Inductively Coupled ◽  
Dislocation Densities ◽  
High Bond ◽  
Etch Rates

The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

1998 ◽  
Vol 537 ◽  
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

AbstractThe role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AIN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AIN were obtained.

Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

1998 ◽  
Vol 512 ◽  
Author(s):  
Hyun Cho ◽  
T. Maeda ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

ABSTRACTAnisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties

2019 ◽  
Vol 28 (8) ◽  
pp. 085002
Author(s):  
Guillaume Le Dain ◽  
Ahmed Rhallabi ◽  
Aurélie Girard ◽  
Christophe Cardinaud ◽  
Fabrice Roqueta ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Inductively Coupled Plasmas ◽  
Rf Power ◽  
Inductively Coupled ◽  
Coupled Plasmas
Sign in / Sign up

Export Citation Format

Share Document