Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors

W. Z. Cai; N. T. Moshegov; T. S. Mayer; D. L. Miller

doi:10.1116/1.1376382

Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1376382 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1529 ◽

Cited By ~ 2

Author(s):

W. Z. Cai ◽

N. T. Moshegov ◽

T. S. Mayer ◽

D. L. Miller

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Cited By ~ 43

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Cited By ~ 39

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Cited By ~ 3

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4959831 ◽

2016 ◽

Vol 109 (4) ◽

pp. 041602 ◽

Cited By ~ 14

Author(s):

S. Joglekar ◽

M. Azize ◽

M. Beeler ◽

E. Monroy ◽

T. Palacios

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Ohmic Contacts ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Surface Treatments ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3549889 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C107 ◽

Cited By ~ 11

Author(s):

W. E. Hoke ◽

T. D. Kennedy ◽

J. J. Mosca ◽

A. J. Kerr ◽

A. Torabi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Applied Physics Express ◽

10.7567/apex.7.095502 ◽

2014 ◽

Vol 7 (9) ◽

pp. 095502 ◽

Cited By ~ 4

Author(s):

Yuen-Yee Wong ◽

Edward Yi Chang ◽

Wei-Ching Huang ◽

Yueh-Chin Lin ◽

Yung-Yi Tu ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Growth Mode ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.111002 ◽

2009 ◽

Vol 48 (11) ◽

pp. 111002 ◽

Cited By ~ 9

Author(s):

Shuxin Tan ◽

Takaaki Suzue ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

Growth Parameters ◽

High Electron Mobility Transistors ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Cited By ~ 2

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Nano Scale ◽

Electron Mobility Transistors ◽

Structural And Electrical Properties

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Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

IEICE Transactions on Electronics ◽

10.1093/ietele/e89-c.7.906 ◽

2006 ◽

Vol E89-C (7) ◽

pp. 906-912 ◽

Cited By ~ 12

Author(s):

A. CORRION

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recent Developments

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