Electrical characteristics of p–n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma
2001 ◽
Vol 19
(2)
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pp. 333
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1997 ◽
Vol 15
(4)
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pp. 1951-1954
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1998 ◽
Vol 317
(1-2)
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pp. 116-119
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1990 ◽
Vol 29
(Part 2, No. 7)
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pp. L1181-L1184
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1997 ◽
Vol 144
(11)
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pp. 3993-3998
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1999 ◽
Vol 38
(Part 2, No. 3A)
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pp. L220-L222
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2001 ◽
Vol 34
(7)
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pp. 1025-1031