Electrical characteristics of p–n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma

Author(s):  
Junli Wang ◽  
Hiroshi Nakashima ◽  
Junsi Gao ◽  
Kanako Iwanaga ◽  
Katsuhiko Furukawa ◽  
...  
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