Electrical properties of thin gate dielectric grown by rapid thermal oxidation

2000 ◽  
Vol 18 (6) ◽  
pp. 2986-2991 ◽  
Author(s):  
J. S. Lee ◽  
S. J. Chang ◽  
S. C. Sun ◽  
S. M. Jang ◽  
M. C. Yu
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Rapid Thermal Oxidation

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

1990 ◽  
Vol 57 (10) ◽  
pp. 1010-1011 ◽  
Author(s):  
Hyunsang Hwang ◽  
Wenchi Ting ◽  
Bikas Maiti ◽  
Dim‐Lee Kwong ◽  
Jack Lee
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Rapid Thermal Oxidation

A Comparison of In-Situ Vapor/Gas Phase Cleaning with Conventional RCA based Wet Cleaning

1994 ◽  
Vol 342 ◽  
Author(s):  
John M. Grant
Keyword(s):  
Thermal Oxidation ◽  
Gas Phase ◽  
Temperature Control ◽  
Organic Contaminants ◽  
Gate Dielectric ◽  
Interface Trap ◽  
Comparison Study ◽  
Rapid Thermal Oxidation

ABSTRACTA comparison study of the effectiveness of in-situ vapor/gas phase cleaning versus conventional wet RCA based cleaning has been performed. The effectiveness of the cleans were compared using Surface Photo-Voltage (SPV) measurements of the quality of a 70Å gate dielectric. Dielectrics grown in oxygen by Rapid Thermal Oxidation (RTO) were measured using SPV. The vapor/gas phase cleaning processes studied have three steps corresponding to the baths in a conventional RCA-based clean. A clean using O2 was used to clean the organic contaminants normally cleaned in the SC-1 bath, a C12 based step corresponded to the SC-2 solution, and an HF/alcohol etch was used to remove the oxide normally etched using buffered HF. It was seen that temperature control of the cleaning chamber walls is necessary to insure reproducible processes and reasonable pump down times. Measurements by SPV indicate that dielectrics grown after vapor-gas phase cleaning have lower interface trap densities than oxides grown after an RCA-based clean.

Rapid thermal oxidation of silicon for thin gate dielectric

1986 ◽  
Vol 22 (13) ◽  
pp. 694 ◽  
Author(s):  
N. Chan Tung ◽  
Y. Caratini
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Rapid Thermal Oxidation

Ultrathin Gate Dielectrics grown in Mixtures of N2O and O2 Using Rapid Thermal Oxidation

1994 ◽  
Vol 342 ◽  
Author(s):  
John M. Grant ◽  
Tzu-Yen Hsieh
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Gas Mixtures ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Oxide Growth ◽  
Oxide Charge ◽  
Rapid Thermal Oxidation

ABSTRACTA study comparing the oxide growth and electrical properties of 60Å oxides grown in different mixtures of O2 and N2O was performed. The oxide growth for all mixtures examined, as well as that of the pure O2 and N2O cases, fit a Deal-Grove oxidation model modified for Rapid Thermal Oxidation (RTO). Linear growth rate constants found for both a simple linear model and the modified Deal-Grove model are significantly greater for mixtures containing only 35% O2 than for pure N2O oxidation. The uniformity of the oxide growth across the wafer for the gas mixtures resembles that seen in pure N2O oxidation rather than pure O2 oxidation. The electrical properties were measured using Surface Photo-Voltage (SPV) techniques along with conventional Capacitance-Voltage (C-V) and Current-Voltage (I-V) techniques. Oxides grown in 100% N2O showed significantly higher oxide charge when compared to oxides grown in 100% O2. An in-situ anneal in an Ar ambient reduces the oxide charge for all gas mixtures examined. The higher oxide charge accompanies an increase in the interface trap density for the oxides grown in 100% N2O. The in-situ anneal reduces the interface trap density for oxide grown in 100% O2 but has little effect for oxides grown in 100% N2O. The interface trap density is reduced by the in-situ annealing for oxides grown in mixtures of O2 and N2O.

Sign in / Sign up

Export Citation Format

Share Document