Rapid thermal oxidation of silicon for thin gate dielectric

1986 ◽  
Vol 22 (13) ◽  
pp. 694 ◽  
Author(s):  
N. Chan Tung ◽  
Y. Caratini
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Rapid Thermal Oxidation

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

1990 ◽  
Vol 57 (10) ◽  
pp. 1010-1011 ◽  
Author(s):  
Hyunsang Hwang ◽  
Wenchi Ting ◽  
Bikas Maiti ◽  
Dim‐Lee Kwong ◽  
Jack Lee
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Rapid Thermal Oxidation

A Comparison of In-Situ Vapor/Gas Phase Cleaning with Conventional RCA based Wet Cleaning

1994 ◽  
Vol 342 ◽  
Author(s):  
John M. Grant
Keyword(s):  
Thermal Oxidation ◽  
Gas Phase ◽  
Temperature Control ◽  
Organic Contaminants ◽  
Gate Dielectric ◽  
Interface Trap ◽  
Comparison Study ◽  
Rapid Thermal Oxidation

ABSTRACTA comparison study of the effectiveness of in-situ vapor/gas phase cleaning versus conventional wet RCA based cleaning has been performed. The effectiveness of the cleans were compared using Surface Photo-Voltage (SPV) measurements of the quality of a 70Å gate dielectric. Dielectrics grown in oxygen by Rapid Thermal Oxidation (RTO) were measured using SPV. The vapor/gas phase cleaning processes studied have three steps corresponding to the baths in a conventional RCA-based clean. A clean using O2 was used to clean the organic contaminants normally cleaned in the SC-1 bath, a C12 based step corresponded to the SC-2 solution, and an HF/alcohol etch was used to remove the oxide normally etched using buffered HF. It was seen that temperature control of the cleaning chamber walls is necessary to insure reproducible processes and reasonable pump down times. Measurements by SPV indicate that dielectrics grown after vapor-gas phase cleaning have lower interface trap densities than oxides grown after an RCA-based clean.

Electrical properties of thin gate dielectric grown by rapid thermal oxidation

2000 ◽  
Vol 18 (6) ◽  
pp. 2986-2991 ◽  
Author(s):  
J. S. Lee ◽  
S. J. Chang ◽  
S. C. Sun ◽  
S. M. Jang ◽  
M. C. Yu
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Rapid Thermal Oxidation

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

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