Effects of chlorine based gettering on the electrical properties of rapid thermal oxidation/nitridation dielectric films

1993 ◽  
Vol 11 (4) ◽  
pp. 1039-1043 ◽  
Author(s):  
Youn Tae Kim ◽  
Chi Hoon Jun ◽  
Sang‐Koo Chung
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Dielectric Films ◽  
Rapid Thermal Oxidation

Electrical properties of thin gate dielectric grown by rapid thermal oxidation

2000 ◽  
Vol 18 (6) ◽  
pp. 2986-2991 ◽  
Author(s):  
J. S. Lee ◽  
S. J. Chang ◽  
S. C. Sun ◽  
S. M. Jang ◽  
M. C. Yu
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Gate Dielectric ◽  
Rapid Thermal Oxidation

Ultrathin Gate Dielectrics grown in Mixtures of N2O and O2 Using Rapid Thermal Oxidation

1994 ◽  
Vol 342 ◽  
Author(s):  
John M. Grant ◽  
Tzu-Yen Hsieh
Keyword(s):  
Electrical Properties ◽  
Thermal Oxidation ◽  
Gas Mixtures ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Oxide Growth ◽  
Oxide Charge ◽  
Rapid Thermal Oxidation

ABSTRACTA study comparing the oxide growth and electrical properties of 60Å oxides grown in different mixtures of O2 and N2O was performed. The oxide growth for all mixtures examined, as well as that of the pure O2 and N2O cases, fit a Deal-Grove oxidation model modified for Rapid Thermal Oxidation (RTO). Linear growth rate constants found for both a simple linear model and the modified Deal-Grove model are significantly greater for mixtures containing only 35% O2 than for pure N2O oxidation. The uniformity of the oxide growth across the wafer for the gas mixtures resembles that seen in pure N2O oxidation rather than pure O2 oxidation. The electrical properties were measured using Surface Photo-Voltage (SPV) techniques along with conventional Capacitance-Voltage (C-V) and Current-Voltage (I-V) techniques. Oxides grown in 100% N2O showed significantly higher oxide charge when compared to oxides grown in 100% O2. An in-situ anneal in an Ar ambient reduces the oxide charge for all gas mixtures examined. The higher oxide charge accompanies an increase in the interface trap density for the oxides grown in 100% N2O. The in-situ anneal reduces the interface trap density for oxide grown in 100% O2 but has little effect for oxides grown in 100% N2O. The interface trap density is reduced by the in-situ annealing for oxides grown in mixtures of O2 and N2O.

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

How Small Is Too Small ? Understanding The Electronic Structure Of Atomic-Scale Transistors

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Electronic Devices ◽  
Local Environment ◽  
Gate Oxide ◽  
Atomic Scale ◽  
Gate Oxides ◽  
Bulk Properties ◽  
Commercial Use

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.

scholarly journals Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1051 ◽  
Author(s):  
Raitis Sondors ◽  
Jelena Kosmaca ◽  
Gunta Kunakova ◽  
Liga Jasulaneca ◽  
Matiss Martins Ramma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Aspect Ratio ◽  
Electric Field ◽  
Thermal Oxidation ◽  
Size Distribution ◽  
High Aspect Ratio ◽  
Growth Conditions ◽  
Cuo Nanowires ◽  
Young’S Moduli ◽  
Order Of Magnitude

Size distribution, Young’s moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis. Young’s moduli determined from resonance and bending experiments show similar diameter dependencies and increase above 200 GPa for nanowires with diameters narrower than 50 nm. The nanowires synthesized by simple thermal oxidation possess electrical resistivities about one order of magnitude lower than the nanowires synthesized by electric field assisted approach in wet air. The high aspect ratio, mechanical strength and robust electrical properties suggest CuO nanowires as promising candidates for NEMS actuators.

A Novel Process Simulator for Rapid Thermal Oxidation: RAPIDOX

1990 ◽  
Vol 36 (3-4) ◽  
pp. 183-188
Author(s):  
S S Purkar ◽  
S Singh ◽  
A D Shaligram
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Process Simulator
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