An Efficient Bump Pad Design to Mitigate the Flip Chip Package Induced Stress

Author(s):  
Mario Gonzalez ◽  
Joeri De Vos ◽  
Geert Van der Plas ◽  
Eric Beyne

A numerical analysis using Finite Element Models of different stress buffer configurations has been proposed for improving the reliability of solder joints and at the same time decrease the induced stresses in the back-end-of-line (BEOL). A non-underfilled Flip Chip with a silicon die size of 10×10 mm2 mounted on a FR4 board has been used as test vehicle. The die to substrate interconnection is done by using copper pillars and Sn solder with a diameter of 50 μm and a total standoff of 50 μm. The thickness of the passivation, a copper pedestal fabricated as a redistribution I/O pad and a polymeric buffer layer with different geometric configurations were used in combination to minimize the induced stresses in the BEOL and increase the flexibility of the copper pillar interconnections. It was found that a stiff layer below the copper pillar has the major contribution to reduce the stress in the BEOL, while the softer buffer layer minimizes the induced plastic strain in the solder interconnection. Fabrication of the samples with optimal configuration are under progress.

2018 ◽  
Vol 2018 (1) ◽  
pp. 000121-000124
Author(s):  
Scott Chen ◽  
Leander Liang ◽  
Pallas Hsu ◽  
Tim Tsai ◽  
Mason Liang ◽  
...  

Abstract In recent years, flip chip technology becomes more and more important with benefits of thin package profile, reduction of package outline, and excellent electrical and thermal performance by connection of copper pillar bumps (CuP) or C4 solder bumps. In order to fill the die gap to prevent voids problem, two encapsulated solutions could be applied: capillary underfill (CUF) and molded underfill (MUF). In general comparison, CUF means to dispense underfill first to fill in die gap then proceed over-molding afterward; and MUF is directly fill under and above die by mold compound. The advantages of MUF solution are low cost and high throughput, however, it will suffer other assembly issues such as solder extrusion and solder crack, and might result in potential function failure. To form these kinds of defects, we suspected that solder will plastically deform under thermal stress treatment, which comes from unbalance mold transfer pressure and material expansion stress during thermal process. In this article, we have tried to investigate the mechanism of solder crack through molding recipe DOE (Design of Experiment) and mold flow simulation. The test vehicle is 12 × 12 mm2 FCCSP, with 6 × 5 mm2 die size. The bump type is copper pillar bump and pitch/size are 126 um and 35 × 60 um2, respectively. The molding recipe has been evaluated by cross section, and it revealed that molding transfer time and molding temperature are directions toward improvement of solder crack issue.


2011 ◽  
Vol 2011 (1) ◽  
pp. 000008-000016 ◽  
Author(s):  
Antonio La Manna ◽  
K. J. Rebibis ◽  
C. Gerets ◽  
E. Beyne

A key element for improving 3D stacking reliability is the choice of the right Underfill materials. The Underfill is a specialized adhesive that has the main purposes of locking top and bottom dies; it must fill the gap between bumps and between dies, while reducing the differential movement that would occur during thermal cycling. Traditional underfill processes are based on local dispensing after solder bump reflow (Capillary dispensing), or before flip chip operation with no need of reflow (No Flow Underfill, NUF). In case of 3D stacking, such processes present some limitations: need of a dispensing area (die size increase); material flowing (spacing between dies) and cost (low throughput). After an introduction on typical underfill applications like die-to-package and die-die assembly, we report the work done to assess the properties of several Wafer Applied Underfill (WAUF) materials and their integration in 3D stacking. These materials have been initially applied on silicon wafers in order to assess the minimum achievable thickness and the material uniformity. The wafers have been coated by using different methods: spin coating and film lamination. After this initial assessment, the most promising materials have been used for 3D stacking. The test vehicle used has Cu/Sn μbumps with a pitch of 40μm. The quality of the materials is judged by electrical test, SAM (Surface Acoustic Microscope) and X-SEM (Scanning Electron Microscope).


2014 ◽  
Vol 2014 (1) ◽  
pp. 000783-000786 ◽  
Author(s):  
Farhang Yazdani

Silicon interposer is emerging as a vehicle for integrating dies with sub 50um bump pitch in 2.5D/3D configuration. Benefits of 2.5D/3D integration are well explained in the literature, however, cost and reliability is a major concern especially with the increase in interposer size. Among the challenges, reliability issues such as warpage, cracks and thermal-stresses must be managed, in addition, multi-layer build-up flip chip substrate cost and its impact on the overall yield must be considered. Because of these challenges, 2.5D/3D silicon interposer has developed a reputation as a costly process. To overcome the reliability challenges and cost associated with typical thin interposer manufacturing and assembly, a rigid silicon interposer type structure is disclosed. In this study, interposer with thickness of greater than 300um is referred to as rigid interposer. Rigid silicon interposer is directly assembled on PCB without the need for intermediary substrate. This eliminates the need for an intermediary substrate, thin wafer handling, wafer bonding/debonding procedures and Through Silicon Via (TSV) reveal processes, thus, substantially reducing the cost of 2.5D/3D integrated products while improving reliability. A 10X10mm2 rigid silicon interposer test vehicle with 310um thickness was designed and fabricated. BGA side of the interposer with 1mm ball pitch was bumped with eutectic solder balls through a reflow process. Interposer was then assembled on a 50X50mm2 FR-4 PCB. We present design and direct assembly of the rigid silicon interposer on PCB followed by temperature cycle results using CSAM images at 250, 500, 750 and 1000 cycles. It is shown that all samples successfully passed the temperature cycle stress test.


2020 ◽  
Vol 8 (2) ◽  
pp. 779-788 ◽  
Author(s):  
Jianhua Chu ◽  
Wei (Alex) Wang ◽  
Qiyao Yu ◽  
Cheng-Yen Lao ◽  
Lin Zhang ◽  
...  

The unique open ZnSe/C nanocages composed of sub-10 nm nanoparticles can dramatically reduce diffusion-induced stresses and enhance the structural integrity with multi-hierarchy stress-buffered effect, resulting in excellent cycle stability.


2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Omar Ahmed ◽  
Chukwudi Okoro ◽  
Scott Pollard ◽  
Tengfei Jiang

PurposeThis study aims to investigate the factors responsible for substrate cracking reliability problem in through-glass vias (TGVs), which are critical components for glass-based 2.5 D integration.Design/methodology/approachNumerical models were used to examine the driving force for substrate cracking in glass interposers due to stress coupling during heating. An analytical solution was used to demonstrate how the energy release rate (ERR) for the glass substrate cracking is affected by the via design and the mismatch in thermal strain. Then, the numerical models were implemented to investigate the design factors effects, such as the pitch distance, via diameter, via pattern, via design, effect from a stress buffer layer and the interposer materials selection on the susceptibility to substrate cracking.FindingsERR for substrate cracking was found to be directly proportional to the via diameter and the thermal mismatch strain. When a via pattern is implemented for high-density integration, a coupling in the stress fields was identified. This coupling effect was found to depend on the pitch distance, the position of the vias, and the via arrangement, suggesting a via pattern-dependent reliability behavior for glass interposers. Changing the design of the via to an annular shape or a substrate-cored via was found to be a promising approach to reduce the susceptibility to substrate cracking compared to a fully filled solid via. Also, the use of a stress buffer layer, an encouraging design prospect presented for the first time for TGVs in this study, was found to significantly reduce cracking. Finally, alternative via and substrate materials showed lower tendency for substrate cracking, indicating that the reliability of glass interposers can be further enhanced with the implementation of such new materials.Originality/valueThis study signifies the first attempt to comprehensively evaluate the susceptibility to crack formation in glass interposers during heating. Therefore, this study provides new perspectives on how to achieve a significant potential reliability improvement for TGVs.


Author(s):  
Teck Joo Goh ◽  
Chia-Pin Chiu ◽  
K. N. Seetharamu ◽  
G. A. Quadir ◽  
Z. A. Zainal

This paper reviews the design of a flip chip thermal test vehicle. Design requirements for different applications such as thermal characterization, assembly process optimization, and product burn-in simulation are outlined. The design processes of different thermal test chip structures including the temperature sensor and passive heaters are described in detail. In addition, the design of fireball heater, a novel test chip structure used for evaluating the effectiveness of heat spreading of advanced thermal solutions, is also illustrated. The design considerations and processes of the package substrate and printed circuit board with special emphasis on the physical routing of the thermal test chip structures are described. These design processes are supported with thermal data from various finite-element analyses (FEA) carried out to evaluate the capability and limitations of thermal test vehicle design. Design optimization as the outcome of these analyses is also elaborated. Lastly, the validation and calibration procedures of the thermal test vehicle are presented in this paper.


2006 ◽  
Vol 5-6 ◽  
pp. 359-366 ◽  
Author(s):  
J. Gong ◽  
C. Liu ◽  
P.P. Conway ◽  
Vadim V. Silberschmidt

SnAgCu solder is a promising lead-free material for interconnections in electronic packages. However, its melting temperature (490°K) is considerably higher than that of the traditional SnPb solder (456°K). At the same time, SnAgCu has much better creep resistance at high temperature. These properties may cause large residual stresses during manufacturing processes due to the mismatch of thermal properties of electronic components that can influence the reliability of solder joints in electronic packages. This paper studies the residual stresses in solder joints in a flip chip package under different cooling conditions and their influence on the subsequent cyclic test by means of a finite element approach. The results show that the initial temperature of 453°K is high enough to induce residual stresses due to manufacturing procedures. Simulations, based on traditional creep-fatigue models, demonstrate that the residual stresses affect the mechanical behaviour of solder joints in several initial thermal cycles but have little effect on their reliability.


Sign in / Sign up

Export Citation Format

Share Document