Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis

2013 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Thermal Properties ◽  
Thermal Management ◽  
Heat Generation ◽  
Thermal Energy ◽  
Hot Spot ◽  
Energy State ◽  
High Current ◽  
The Impact ◽  
Spot Temperature

This paper describes thermal properties of power Si MOSFET. The problem of hot spot in sub-micron scale Si MOSFET has been widely known. Recently, power Si MOSFET is a key device in a lot of area, for example car electronics. In power Si MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal properties of power Si MOSFET is evaluated with Electro-Thermal Analysis and impurity dependency of temperature of power Si MOSFET is discussed. Under high electric field, electron thermal energy becomes much higher than thermal energy of crystal lattice. Therefore, in this paper, non-equilibrium energy state between electron and lattice is considered. Calculated results showed that hot spot appears in power Si MOSFET. Further, it is investigated that the impact of donor density on hot spot temperature is strong.

Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis

2013 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Electrical Properties ◽  
Thermal Management ◽  
Heat Generation ◽  
Thermal Energy ◽  
Voltage Dependence ◽  
Hot Spot ◽  
Energy State ◽  
Drain Current ◽  
Thermal And Electrical Properties

This paper describes thermal and electrical properties of power Si MOSFET. The problem of hot spot in sub-micron scale Si MOSFET has been widely known. Recently, power Si MOSFET is key device in a lot of area, for example car electronics. In power Si MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal and electrical properties of power Si MOSFET is evaluated with Electro-Thermal Analysis and fundamental heat generation phenomenon of power Si MOSFET is discussed. Under high electric field, electron thermal energy becomes much higher than thermal energy of crystal lattice. Therefore, in this paper, non-equiriblium energy state between electron and lattice is considered. Calculated results showed that hotspot appears in power Si MOSFET. Further, drain voltage dependence of hotspot temperature and temperature dependence of drain current are discussed.

Effects of A Rotated Chip Package on Mechanical and Thermal Performances

2003 ◽  
Author(s):  
Henry H. Jung ◽  
Ron Zhang ◽  
Eddie Lee ◽  
Sai Ankireddi
Keyword(s):  
Thermal Analysis ◽  
Mechanical Stress ◽  
Stress Reduction ◽  
Mechanical Design ◽  
Hot Spot ◽  
Junction Temperature ◽  
Design Considerations ◽  
Temperature Performance ◽  
The Impact ◽  
Spot Temperature

In the industry, heatsinks have commonly been oriented on IC packages so that their plan outlines are edge-wise parallel to those of the package. However there are situations where a rotated orientation is preferable, wherein the plan outline of the package is not ‘aligned’ with that of the heatsink assembly — in other words a situation where the heatsink location/orientation remain unchanged while the package itself is rotated in-plane. Mechanical design considerations may drive the need for such a non-traditional orientation, since the rotated package is anticipated to have lower mechanical stress levels in the silicon than the non-rotated one under the same heatsink-induced clamping load. In this study we examine the impact of such package rotation(s) on both the junction temperature performance of CPU packages and the package-level clamp-load induced mechanical stresses. Results show that the stress reduction in the rotated package is in the range of 15% to 60%. The thermal analysis also demonstrates that the effects on the hot spot temperature with 45 degrees rotation is an increase of almost 2°C compared with the non-rotated die case. This increase in junction temperature is expected to be even higher with lower airflow as seen in typical computer systems. Thus it may be inferred that it is important to consider the effects of die rotation on package performances.

scholarly journals Effect of Loads on Temperature Distribution Characteristics of Oil-Immersed Transformer Winding

2021 ◽  
Author(s):  
Zhengang Zhao ◽  
Zhangnan Jiang ◽  
Yang Li ◽  
Chuan Li ◽  
Dacheng Zhang
Keyword(s):  
Temperature Distribution ◽  
Hot Spots ◽  
Hot Spot ◽  
Transformer Oil ◽  
Distribution Characteristics ◽  
Thermal Circuit ◽  
Transformer Winding ◽  
Overload Capacity ◽  
The Impact ◽  
Spot Temperature

The temperature of the hot-spots on windings is a crucial factor that can limit the overload capacity of the transformer. Few studies consider the impact of the load on the hot-spot when studying the hot-spot temperature and its location. In this paper, a thermal circuit model based on the thermoelectric analogy method is built to simulate the transformer winding and transformer oil temperature distribution. The hot-spot temperature and its location under different loads are qualitatively analyzed, and the hot-spot location is analyzed and compared to the experimental results. The results show that the hot-spot position on the winding under the rated power appears at 85.88% of the winding height, and the hot-spot position of the winding moves down by 5% in turn at 1.3, 1.48, and 1.73 times the rated power respectively.

VOLTAGE DEPENDENCE OF HOT SPOT TEMPERATURE ON SIC POWER MOSFET WITH ELECTRO-THERMAL ANALYSIS

2018 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Kazuhisa Yuki ◽  
Noriyuki Unno ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Voltage Dependence ◽  
Hot Spot ◽  
Power Mosfet ◽  
Spot Temperature

Doping Dependent Electro-Thermal Analysis of 4H-SiC Power MOSFET

2020 ◽  
Vol 17 (7) ◽  
pp. 2905-2911
Author(s):  
Ngoc Thi Nguyen ◽  
Seong-Ji Min ◽  
Sang-Mo Koo
Keyword(s):  
Thermal Analysis ◽  
Temperature Distribution ◽  
Hot Spot ◽  
Drift Region ◽  
Analysis Method ◽  
Doping Density ◽  
Power Mosfet ◽  
Thermal Analysis Method ◽  
Mos Structure ◽  
Spot Temperature

This paper presents a comparison of device behaviors of 4H-SiC DMOSFET (DMOS), trench MOS-FETs without (T-MOS) and with a p-shield (TP-MOS). The influence of doping density on device temperature distribution is investigated using the electro-thermal analysis method. It is established that the formation of a hot-spot (the highest temperature) is formed at the junction between the p-base and the n-drift region next to the corner of the trench gate. This hot spot temperature increases with rising doping density of the n-drift region. Additionally on-resistance (Ron) of the three examined structures increase when temperatures rise from 300 K to 523 K. At 300 K, the on-resistance of the TP-MOS was 2.7 mil cm2 32.5% lower than that of T-MOS while 67.47% lower than that of DMOS. When the temperature rises to 523 K, TP-MOS structure, with an on-resistance of 5.26 mil cm2 is obtained, which is lower by 34.25% and 73.7% with comparison to those of T-MOS and DMOS, respectively.

Design of a New Oil Spraying Device for Hot Spot Cooling in Large Scale Electric Power Transformers

2008 ◽  
Vol 9 (2) ◽  
Author(s):  
Kourosh Mousavi Takami ◽  
Jafar Mahmoudi
Keyword(s):  
Thermal Management ◽  
Large Scale ◽  
Cooling System ◽  
Hot Spot ◽  
Considerable Effect ◽  
Power Transformers ◽  
Insulation Aging ◽  
Simulation Results ◽  
Spot Cooling ◽  
Spot Temperature

Hot spot temperature (HST) is the most important parameter in the operation of power transformers. The HST has to be held under a prescribed limit. HST has a considerable effect on the insulation aging. Therefore detecting, monitoring and removing the HST could be a very important and necessary action for utilities. A new design of oil spraying and its effect, along with a thermal management in a transformer cooling system has been studied in this paper. The effect of oil fluid flow on the HST problem has been considered in this paper; and the calculations and simulation have been performed by Ants algorithm. The simulation results have been validated based on a 230/63/20 kV, 250MVA transformer at the Sari substation in Iran, and the results indicate that the new design could mitigate the limitations of transformer loading due to the HST problem. The Ants algorithm have been proposed and applied for accomplishing this task and to give an improved level of accuracy.

Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices

2012 ◽  
Author(s):  
Peng Wang ◽  
Michael Manno ◽  
Avram Bar-Cohen
Keyword(s):  
Heat Flux ◽  
Quantum Well ◽  
Thermal Management ◽  
Hot Spot ◽  
Semiconductor Devices ◽  
High Heat ◽  
Wide Bandgap ◽  
High Heat Flux ◽  
High Electron ◽  
The Impact

Wide bandgap semiconductor technology is expected to have a dramatic impact on radar and communications systems. To take full advantage of the power capabilities and small device sizes of wide bandgap semiconductors, new and novel thermal management solutions, especially for high power density, monolithic microwave integrated circuits (MMICs) are in high demand. In this paper, a quantum-well Si/SiC self-cooling concept for hot spot thermal management at the multi-fingered GaN high electron mobility transistor (HEMTs) in the GaN-on-SiC package is proposed and investigated using a three dimensional (3-D) thermal-electric coupling simulation. The impact of electric current, cooler size, Si/SiC substrate thickness, Si/SiC thermal conductivity, and interfacial parasitic effect on the hot spot cooling is examined and discussed. The preliminary modeling results strongly suggest that self-cooling phenomenon inherent in the quantum-well Si/SiC substrate can be used to remove local high heat flux hot spot on the semiconductor devices.

Sign in / Sign up

Export Citation Format

Share Document