Accurate thermal boundary condition to predict hot spot temperature using Electro-Thermal Analysis

2016 ◽  
Author(s):  
R. Kibushi ◽  
T. Hatakeyama ◽  
S. Nakagawa ◽  
M. Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Boundary Condition ◽  
Hot Spot ◽  
Thermal Boundary Condition ◽  
Spot Temperature

VOLTAGE DEPENDENCE OF HOT SPOT TEMPERATURE ON SIC POWER MOSFET WITH ELECTRO-THERMAL ANALYSIS

2018 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Kazuhisa Yuki ◽  
Noriyuki Unno ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Voltage Dependence ◽  
Hot Spot ◽  
Power Mosfet ◽  
Spot Temperature

Doping Dependent Electro-Thermal Analysis of 4H-SiC Power MOSFET

2020 ◽  
Vol 17 (7) ◽  
pp. 2905-2911
Author(s):  
Ngoc Thi Nguyen ◽  
Seong-Ji Min ◽  
Sang-Mo Koo
Keyword(s):  
Thermal Analysis ◽  
Temperature Distribution ◽  
Hot Spot ◽  
Drift Region ◽  
Analysis Method ◽  
Doping Density ◽  
Power Mosfet ◽  
Thermal Analysis Method ◽  
Mos Structure ◽  
Spot Temperature

This paper presents a comparison of device behaviors of 4H-SiC DMOSFET (DMOS), trench MOS-FETs without (T-MOS) and with a p-shield (TP-MOS). The influence of doping density on device temperature distribution is investigated using the electro-thermal analysis method. It is established that the formation of a hot-spot (the highest temperature) is formed at the junction between the p-base and the n-drift region next to the corner of the trench gate. This hot spot temperature increases with rising doping density of the n-drift region. Additionally on-resistance (Ron) of the three examined structures increase when temperatures rise from 300 K to 523 K. At 300 K, the on-resistance of the TP-MOS was 2.7 mil cm2 32.5% lower than that of T-MOS while 67.47% lower than that of DMOS. When the temperature rises to 523 K, TP-MOS structure, with an on-resistance of 5.26 mil cm2 is obtained, which is lower by 34.25% and 73.7% with comparison to those of T-MOS and DMOS, respectively.

Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis

2013 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Thermal Properties ◽  
Thermal Management ◽  
Heat Generation ◽  
Thermal Energy ◽  
Hot Spot ◽  
Energy State ◽  
High Current ◽  
The Impact ◽  
Spot Temperature

This paper describes thermal properties of power Si MOSFET. The problem of hot spot in sub-micron scale Si MOSFET has been widely known. Recently, power Si MOSFET is a key device in a lot of area, for example car electronics. In power Si MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal properties of power Si MOSFET is evaluated with Electro-Thermal Analysis and impurity dependency of temperature of power Si MOSFET is discussed. Under high electric field, electron thermal energy becomes much higher than thermal energy of crystal lattice. Therefore, in this paper, non-equilibrium energy state between electron and lattice is considered. Calculated results showed that hot spot appears in power Si MOSFET. Further, it is investigated that the impact of donor density on hot spot temperature is strong.

Effects of A Rotated Chip Package on Mechanical and Thermal Performances

2003 ◽  
Author(s):  
Henry H. Jung ◽  
Ron Zhang ◽  
Eddie Lee ◽  
Sai Ankireddi
Keyword(s):  
Thermal Analysis ◽  
Mechanical Stress ◽  
Stress Reduction ◽  
Mechanical Design ◽  
Hot Spot ◽  
Junction Temperature ◽  
Design Considerations ◽  
Temperature Performance ◽  
The Impact ◽  
Spot Temperature

In the industry, heatsinks have commonly been oriented on IC packages so that their plan outlines are edge-wise parallel to those of the package. However there are situations where a rotated orientation is preferable, wherein the plan outline of the package is not ‘aligned’ with that of the heatsink assembly — in other words a situation where the heatsink location/orientation remain unchanged while the package itself is rotated in-plane. Mechanical design considerations may drive the need for such a non-traditional orientation, since the rotated package is anticipated to have lower mechanical stress levels in the silicon than the non-rotated one under the same heatsink-induced clamping load. In this study we examine the impact of such package rotation(s) on both the junction temperature performance of CPU packages and the package-level clamp-load induced mechanical stresses. Results show that the stress reduction in the rotated package is in the range of 15% to 60%. The thermal analysis also demonstrates that the effects on the hot spot temperature with 45 degrees rotation is an increase of almost 2°C compared with the non-rotated die case. This increase in junction temperature is expected to be even higher with lower airflow as seen in typical computer systems. Thus it may be inferred that it is important to consider the effects of die rotation on package performances.

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