Modelling Reliability of Power Electronics Packaging

2009 ◽  
Author(s):  
Chris Bailey ◽  
Hua Lu ◽  
Chunyan Yin
Keyword(s):  
Power Electronics ◽  
Electrical Power ◽  
Bipolar Transistors ◽  
Transport Systems ◽  
Insulated Gate Bipolar Transistors ◽  
Design Engineers ◽  
Electric Car ◽  
Igbt Modules ◽  
Small Footprint ◽  
And Control

Power Electronics uses semiconductor technology to convert and control electrical power. Demands for efficient energy management, conversion and conservation, and the increasing take up of electronics in transport systems (i.e. all electric car) there has been tremendous growth in the use of power electronics semiconductor devices such as Insulated Gate Bipolar Transistors (IGBT’s). The packaging of the power electronics devices involves a number of challenges for design engineers in terms of reliability and thermal management. For example IGBT modules will contain a number of semiconductor dies within a small footprint bonded to substrates with aluminium wires and wide area solder joints. The reliability of the package will depend on thermo-mechanical behavior of these materials. This paper details the results from a major UK project involving academics and industrial partners to investigate the reliability of IGBT modules. The focus of the presentation will be on the modelling tools developed to predict reliability and also the development of prognostics techniques to predict the remaining life of the package.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

scholarly journals Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

2015 ◽  
Vol 16 (3) ◽  
pp. 217-223 ◽  
Author(s):  
Alexander Krainyukov ◽  
Valery Kutev
Keyword(s):  
Bipolar Transistors ◽  
Power Supplies ◽  
Insulated Gate Bipolar Transistors ◽  
Research Results ◽  
Technical Requirements ◽  
Igbt Modules ◽  
Micro Arc Oxidation

Abstract The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.

Efficient Thermal-Impedance Simulation of Insulated-Gate Bipolar Transistors Modules on Heat Sinks

2013 ◽  
Vol 5 (4) ◽  
Author(s):  
Thomas B. Gradinger ◽  
Uwe Drofenik
Keyword(s):  
Heat Sink ◽  
Bipolar Transistors ◽  
Simulation Software ◽  
Heat Sinks ◽  
Junction Temperature ◽  
Model Parameters ◽  
Insulated Gate Bipolar Transistors ◽  
Thermal Impedance ◽  
Igbt Modules ◽  
D Model

The prediction of temperatures in power semiconductor modules, such as insulated-gate bipolar transistors (IGBTs) is critical to ensure adequate lifetime modeling of the devices. A temperature of particular interest is that of the semiconductor junction, which is used to assess the lift-off of wire bonds. For many applications featuring dynamic loads, the junction temperature needs to be simulated for so-called mission profiles of significant duration. To limit the computational expense, the simulations are based on thermal impedances from junction to ambient, which may be obtained from numerical 3-d simulations. Even these 3-d simulations can be computationally expensive. In power-electronic systems, often, large heat sinks are used with a multitude of mounted IGBT modules, interacting thermally. In such cases, the detailed 3-d models become large and the transient simulations are not feasible. In the present work, a method is proposed that allows us to significantly reduce the 3-d model size. To this end, the ideas of compact or boundary-condition-independent models are used. The presented method has the advantage that, unlike in model-order reduction, the system matrices of the 3-d model are not needed. This makes the method applicable to commercial simulation software like ANSYS Icepak™, that does not give access to the system matrices. The method is implemented via MATLAB™ scripts that automatically generate 3-d ANSYS Icepak™ models of IGBT modules on a heat sink. An example case of two IGBT modules mounted on an air-cooled heat sink is presented, and the method is shown to yield good accuracy (thermal-impedance errors below 8% and thermal-resistance errors close to zero), while reducing the model's mesh size by the factor of 14. Further error reduction is expected to be possible by adapting the model parameters. This can be subject to future work.

scholarly journals Sensorless Control of Voltage Peaks in Class-E Single-Ended Resonant Inverter for Induction Heating Rice Cooker

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4545
Author(s):  
Yongseung Oh ◽  
Jaeeul Yeon ◽  
Jayoon Kang ◽  
Ilya Galkin ◽  
Wonsoek Oh ◽  
...  
Keyword(s):  
High Pressure ◽  
Breakdown Voltage ◽  
Induction Heating ◽  
Control Method ◽  
Supply Voltage ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Voltage Fluctuations ◽  
Resonant Inverter ◽  
Do So

Single-ended (SE) resonant inverters are widely used as power converters for high-pressure rice cooker induction, with 1200 V insulated-gate bipolar transistors (IGBTs) being used as switching devices for kW-class products. When voltage fluctuations occur at the input stage of an SE resonant inverter, the resonant voltage applied to the IGBT can be directly affected, potentially exceeding the breakdown voltage of the IGBT, resulting in its failure. Consequently, the resonant voltage should be limited to below a safety threshold—hardware resonant voltage limiting methods are generally used to do so. This paper proposes a sensorless resonant voltage control method that limits the increase in the resonant voltage caused by overvoltage or supply voltage fluctuations. By calculating and predicting the resonance voltage through the analysis of the resonance circuit, the resonance voltage is controlled not to exceed the breakdown voltage of the IGBT. The experimental results of a 1.35 kW SE resonant inverter for a high-pressure induction heating rice cooker were used to verify the validity of the proposed sensorless resonant voltage limiting method.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song
Keyword(s):  
High Voltage ◽  
Bipolar Transistors ◽  
Power Device ◽  
Insulated Gate Bipolar Transistors

Modeling, Actuation, and Control of an Active Fluid Vibration Isolator

1997 ◽  
Vol 119 (1) ◽  
pp. 52-59 ◽  
Author(s):  
M. J. Panza ◽  
D. P. McGuire ◽  
P. J. Jones
Keyword(s):  
Electrical Power ◽  
Fluid Pressure ◽  
Space Representation ◽  
Vibration Isolator ◽  
Mass System ◽  
Integral Control ◽  
Active Fluid ◽  
State Space Representation ◽  
In Series ◽  
And Control

An integrated mathematical model for the dynamics, actuation, and control of an active fluid/elastomeric tuned vibration isolator in a two mass system is presented. The derivation is based on the application of physical principles for mechanics, fluid continuity, and electromagnetic circuits. Improvement of the passive isolator performance is obtained with a feedback scheme consisting of a frequency shaped notch compensator in series with integral control of output acceleration and combined with proportional control of the fluid pressure in the isolator. The control is applied via an electromagnetic actuator for excitation of the fluid in the track connecting the two pressure chambers of the isolator. Closed loop system equations are transformed to a nondimensional state space representation and a key dimensionless parameter for isolator-actuator interaction is defined. A numerical example is presented to show the effect of actuator parameter selection on system damping, the performance improvement of the active over the passive isolator, the robustness of the control scheme to parameter variation, and the electrical power requirements for the actuator.

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