Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

2001 ◽  
Author(s):  
Giho Cha ◽  
Youngchul Kim ◽  
Hyungwoo Jang ◽  
Hyunsoon Kang ◽  
Changsub Song
Keyword(s):  
High Voltage ◽  
Bipolar Transistors ◽  
Power Device ◽  
Insulated Gate Bipolar Transistors

Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

2015 ◽  
Vol 118 (8) ◽  
pp. 085702 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Koji Nakayama ◽  
Atsushi Tanaka ◽  
Katsunori Asano ◽  
Shi-yang Ji ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Voltage ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Very High

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

2015 ◽  
Vol 821-823 ◽  
pp. 851-854
Author(s):  
Tetsuya Miyazawa ◽  
Koji Nakayama ◽  
Atsushi Tanaka ◽  
Katsunori Asano ◽  
Shi Yang Ji ◽  
...  
Keyword(s):  
High Voltage ◽  
Carrier Lifetime ◽  
Elevated Temperatures ◽  
Open Circuit ◽  
Bipolar Transistors ◽  
Insulated Gate Bipolar Transistors ◽  
Decay Measurement ◽  
Very High ◽  
Drift Layer

Thick multi-layer 4H-SiC epitaxial growth was investigated for very high-voltage Si-face p-channel insulated gate bipolar transistors (p-IGBTs). The multi-layer included n+ buffer, p+ field stop, and thick p- drift layers. Two processes were employed to enhance the carrier lifetime of the p- drift layer: carbon ion implantation/annealing and hydrogen annealing, and the enhanced carrier lifetime was confirmed by the open-circuit voltage decay measurement. Using the grown thick multi-layer 4H-SiC, simple pin diodes were fabricated instead of p-IGBTs to demonstrate efficient conductivity modulation in the thick p- drift layer. While the on-state voltage was high at room temperature, it decreased significantly at elevated temperatures, and attained 3.5 V at 100 A/cm2 at 200°C for the diode with the carrier lifetime enhancement processes, indicating sufficient conductivity modulation.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

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