Kinematically Excited Large Angle Tilting Actuator

2010 ◽  
Author(s):  
Assaf Ya’akobovitz ◽  
Slava Krylov
Keyword(s):  
Parallel Plate ◽  
Actuation Voltage ◽  
Large Angle ◽  
Single Layer ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Deep Reactive Ion Etching ◽  
Micro Actuator ◽  
Tilting Angle ◽  
Out Of Plane

We report on a novel architecture and operational principle of a large angle kinematically excited tilting micro actuator. The device transforms and amplifies small linear out-of-plane motion of a parallel-plate electrostatic transducer into a tilting motion of a plate. The device characterized by robust single layer architecture was fabricated using a silicon on insulator (SOI) wafer and common deep reactive ion etching (DRIE) based fabrication process. Experimental and model results collectively illustrate the feasibility and efficiency of the suggested actuation approach. The optical tilting angle of 37.5° was experimentally registered under relatively low actuation voltage of 100 V.

Large Angle Parametrically Excited Tilting Micro Actuator

2008 ◽  
Author(s):  
Assaf Ya’akobovitz ◽  
Slava Krylov
Keyword(s):  
Parametric Excitation ◽  
Inertial Sensors ◽  
Actuation Voltage ◽  
Large Angle ◽  
Three Dimensional ◽  
Single Layer ◽  
Silicon On Insulator ◽  
Performance Study ◽  
Operational Parameters ◽  
Lumped Model

We present novel operational principle of a tilting MEMS device based on parametric excitation and linear to angular motion transformation. The device is fabricated using a single layer of silicon on insulator (SOI) wafer and combines simple fabrication process with several beneficial features including large tilting angles, wide bandwidth, low sensitivity to deviation in geometrical and operational parameters and low actuation voltage. A theoretical feasibility and performance study was carried out using a lumped model of the device and verified by a coupled three-dimensional simulation. Parametric excitation of the tilting motion was demonstrated experimentally using and external piezoelectric transducer and tilting angles of 39° were registered. The suggested operational approach could be efficiently implemented in many MEMS based applications incorporating tilting elements including micromirrors, bio medical devices and inertial sensors.

Fabrication and Characterization of Vertical Travel Linear Microactuator

2004 ◽  
Author(s):  
Risaku Toda ◽  
Eui-Hyeok Yang
Keyword(s):  
Piezoelectric Actuator ◽  
Actuation Voltage ◽  
Silicon On Insulator ◽  
Test Bed ◽  
Device Structure ◽  
Beam Geometry ◽  
Out Of Plane ◽  
Fabrication And Characterization ◽  
Vertical Travel

This paper describes design, fabrication and characterization of a proof-of-concept vertical travel linear microactuator designed to provide out-of-plane actuation for high precision positioning applications in space. The microactuator is designed to achieve vertical actuation travel by incorporating compliant beam structures within a SOI (Silicon on Insulator) wafer. Device structure except for the piezoelectric actuator is fabricated on the SOI wafer using Deep Reactive Ion Etch (DRIE) process. Incremental travel distance of the piezoelectric actuator is adjustable at nanometer level by controlling voltage. Bistable beam geometry is employed to minimize initial gaps between electrodes. The footprint of an actuator is approximately 2 mm × 4 mm. Actuation is characterized with LabVIEW-based test bed. Actuation voltage sequence is generated by the LabVIEW controlled power relays. Vertical actuation in the range of 500 nm over 10-cycle was observed using WYKO RST Plus Optical Profiler.

Deep X-Ray Mask With Integrated Actuator for 3D LIGA Process

2002 ◽  
Author(s):  
Kwang-Cheol Lee ◽  
Seung S. Lee
Keyword(s):  
Cross Section ◽  
Absorbed Dose ◽  
Silicon On Insulator ◽  
Comb Drive ◽  
Deep Reactive Ion Etching ◽  
X Ray ◽  
Micro Actuator ◽  
Dose Profile ◽  
Dc Bias ◽  
Gold Absorber

We present a noval method of 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a microactuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify that absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose controur are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator wafer. 1 mm × 1 mm, 20 μm thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspesnsion beams and is driven by the comb electrodes. A 10 μm thick, 50 μm line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and arnplitured are around 3.6 kHz and 20 μm, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Fabricated PMMA microstructure shows 15.4 μm deep, S-shaped cross section in the case of 1.6 kJ cm−3 surface dose and GG development at 35°C for 40 minutes.

Nano-Manipulation Device With Parallel Kinematic Micro-Positioning Stage and Integrated Active Cantilever

2009 ◽  
Author(s):  
Jingyan Dong ◽  
Placid M. Ferreira
Keyword(s):  
Plane Motion ◽  
Silicon On Insulator ◽  
Three Dimensions ◽  
Driving Voltage ◽  
Ambient Conditions ◽  
Positioning Stage ◽  
Out Of Plane ◽  
Motion Range ◽  
High Bandwidth ◽  
Parallel Kinematic

This paper discusses the design, analysis, fabrication and characterization of a MEMS device for nano-manufacturing and nano-metrology applications. The device includes an active cantilever as its manipulator that is integrated with a high-bandwidth two degree-of-freedom translational (XY) micro positioning stage. The cantilever is actuated electrostatically through a separate electrode that is fabricated underneath the cantilever. Torsion bars that connect the cantilever to the rest of the structure provide the required compliance for cantilever’s out-of-plane rotation. The active cantilever is carried by a micro-positioning stage, which enables high-bandwidth scanning to allow manipulation in three dimensions. The design of the MEMS (Micro-Electro-Mechanical Systems) stage is based on a parallel kinematic mechanism (PKM). The PKM design decouples the motion in the X and Y directions and restricts rotations in the XY plane while allowing for an increased motion range with linear kinematics in the operating region (or workspace). The truss-like structure of the PKM also results in increased stiffness and reduced mass of the stage. The integrated cantilever device is fabricated on a Silicon-On-Insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. The actuation electrode of the cantilever is fabricated on the handle layer, while the cantilever and XY stage are at the device layer of the SOI wafer. Two sets of electrostatic linear comb drives are used to actuate the stage mechanism in X and Y directions. The cantilever provides an out-of-plane motion of 7 microns at 4.5V, while the XY stage provides a motion range of 24 microns in each direction at the driving voltage of 180V. The resonant frequency of the XY stage under ambient conditions is 2090 Hz. A high quality factor (∼210) is achieved from this parallel kinematics XY stage. The fabricated stages will be adapted as chip-scale manufacturing and metrology devices for nanomanufacturing and nano-metrology applications.

scholarly journals High Amplitude Secondary Mass Drive

2000 ◽  
Author(s):  
Christopher W. Dyck ◽  
James J. Allen ◽  
Robert J. Huber ◽  
Jeffry J. Sniegowski
Keyword(s):  
Power Dissipation ◽  
Parallel Plate ◽  
High Amplitude ◽  
Plane Motion ◽  
Analysis And Design ◽  
Vibratory Gyroscopes ◽  
Response Data ◽  
Out Of Plane ◽  
Motion Amplifier ◽  
Mechanical Oscillators

Abstract In this paper we describe a high amplitude electrostatic drive for surface micromachined mechanical oscillators that may be suitable for vibratory gyroscopes. It is an advanced design of a previously reported dual mass oscillator (Dyck, et. al., 1999). The structure is a 2 degree-of-freedom, parallel-plate driven motion amplifier, termed the secondary mass drive oscillator (SMD oscillator). During each cycle the device contacts the drive plates, generating large electrostatic forces. Peak-to-peak amplitudes of 54 μm have been obtained by operating the structure in air with an applied voltage of 11 V. We describe the structure, present the analysis and design equations, and show recent results that have been obtained, including frequency response data, power dissipation, and out-of-plane motion.

scholarly journals A Study on Parametric Amplification in a Piezoelectric MEMS Device

Micromachines ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 19 ◽  
Author(s):  
Miguel Gonzalez ◽  
Yoonseok Lee
Keyword(s):  
Quality Factor ◽  
Parametric Excitation ◽  
Fold Increase ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Atmospheric Conditions ◽  
Concentrated Mass ◽  
Micro Electro Mechanical Systems ◽  
Out Of Plane ◽  
Quality Factor Q

In various applications, damping from the surrounding fluid severely degrades the performance of micro-electro-mechanical systems (MEMS). In this paper, mechanical amplification through parametric resonance was investigated in a piezoelectrically actuated MEMS to overcome the effects of damping. The device was fabricated using the PiezoMUMPS process, which is based on a Silicon-on-Insulator (SOI) process with an additional aluminum nitride (AlN) layer. Here, a double-clamped cantilever beam with a concentrated mass at the center was excited at its first resonance mode (out-of-plane motion) in air and at atmospheric conditions. A parametric signal modulating the stiffness of the beam was added at twice the frequency of the excitation signal, which was swept through the resonance frequency of the mode. The displacement at the center of the device was detected optically. A four-fold increase in the quality-factor, Q, of the resonator was obtained at the highest values in amplitude used for the parametric excitation. The spring modulation constant was obtained from the effective quality-factor, Q e f f , versus parametric excitation voltage curve. This study demonstrates that through these methods, significant improvements in performance of MEMS in fluids can be obtained, even for devices fabricated using standard commercial processes.

scholarly journals An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 267 ◽  
Author(s):  
Chikako Sano ◽  
Manabu Ataka ◽  
Gen Hashiguchi ◽  
Hiroshi Toshiyoshi
Keyword(s):  
Sound Pressure ◽  
Low Voltage ◽  
Input Voltage ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Electrostatic Actuators ◽  
Microelectromechanical System ◽  
Acoustic Transducer ◽  
Out Of Plane ◽  
Dc Bias

Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a − 40   V biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A − 10   V electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of V i n = 5   V pp alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system.

Sign in / Sign up

Export Citation Format

Share Document