scholarly journals A Study on Parametric Amplification in a Piezoelectric MEMS Device

Micromachines ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 19 ◽  
Author(s):  
Miguel Gonzalez ◽  
Yoonseok Lee
Keyword(s):  
Quality Factor ◽  
Parametric Excitation ◽  
Fold Increase ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Atmospheric Conditions ◽  
Concentrated Mass ◽  
Micro Electro Mechanical Systems ◽  
Out Of Plane ◽  
Quality Factor Q

In various applications, damping from the surrounding fluid severely degrades the performance of micro-electro-mechanical systems (MEMS). In this paper, mechanical amplification through parametric resonance was investigated in a piezoelectrically actuated MEMS to overcome the effects of damping. The device was fabricated using the PiezoMUMPS process, which is based on a Silicon-on-Insulator (SOI) process with an additional aluminum nitride (AlN) layer. Here, a double-clamped cantilever beam with a concentrated mass at the center was excited at its first resonance mode (out-of-plane motion) in air and at atmospheric conditions. A parametric signal modulating the stiffness of the beam was added at twice the frequency of the excitation signal, which was swept through the resonance frequency of the mode. The displacement at the center of the device was detected optically. A four-fold increase in the quality-factor, Q, of the resonator was obtained at the highest values in amplitude used for the parametric excitation. The spring modulation constant was obtained from the effective quality-factor, Q e f f , versus parametric excitation voltage curve. This study demonstrates that through these methods, significant improvements in performance of MEMS in fluids can be obtained, even for devices fabricated using standard commercial processes.

Performance evaluation of a multiple optical link FSO–FSO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Mohammed Larbi Tayebi ◽  
Amina Djir ◽  
Fatiha Meskine
Keyword(s):  
Quality Factor ◽  
Optical Fibers ◽  
Large Scale ◽  
Atmospheric Conditions ◽  
Space Optics ◽  
Slowing Down ◽  
A Value ◽  
Operating Distance ◽  
Quality Factor Q ◽  
Attenuation Values

AbstractFree-space optics (FSO) connects two distant points by a simple light beam. Currently, this technique is a complement to radio frequency systems and those based on optical fibers. However, its large-scale deployment is slowing down due to major drawbacks such as the short operating distance and its great vulnerability to atmospheric conditions. In this article, and in order to increase the connection distance of the FSO systems and maintaining an acceptable signal quality, we inserted in the transmission channel: a receiver and a transmitter that retransmit the received signal. We have chosen two weather situations. The attenuation values used are 85 dB/km and 170 dB/km. They represent two different fog densities. For an attenuation of 85 dB/km, the quality factor Q degrades and goes from the value 44.50 to 2.60 when the distance goes from 90 to 180 m. With the proposed technique, the quality factor has improved significantly since we obtained a value that is equal to 29.82 instead of 2.60 at the overall distance of 180 m. On the other hand, we increased the distance until we obtained a quality factor around 2.5. The distance obtained is equal to 360 m, which is twice the initial distance.

Nano-Manipulation Device With Parallel Kinematic Micro-Positioning Stage and Integrated Active Cantilever

2009 ◽  
Author(s):  
Jingyan Dong ◽  
Placid M. Ferreira
Keyword(s):  
Plane Motion ◽  
Silicon On Insulator ◽  
Three Dimensions ◽  
Driving Voltage ◽  
Ambient Conditions ◽  
Positioning Stage ◽  
Out Of Plane ◽  
Motion Range ◽  
High Bandwidth ◽  
Parallel Kinematic

This paper discusses the design, analysis, fabrication and characterization of a MEMS device for nano-manufacturing and nano-metrology applications. The device includes an active cantilever as its manipulator that is integrated with a high-bandwidth two degree-of-freedom translational (XY) micro positioning stage. The cantilever is actuated electrostatically through a separate electrode that is fabricated underneath the cantilever. Torsion bars that connect the cantilever to the rest of the structure provide the required compliance for cantilever’s out-of-plane rotation. The active cantilever is carried by a micro-positioning stage, which enables high-bandwidth scanning to allow manipulation in three dimensions. The design of the MEMS (Micro-Electro-Mechanical Systems) stage is based on a parallel kinematic mechanism (PKM). The PKM design decouples the motion in the X and Y directions and restricts rotations in the XY plane while allowing for an increased motion range with linear kinematics in the operating region (or workspace). The truss-like structure of the PKM also results in increased stiffness and reduced mass of the stage. The integrated cantilever device is fabricated on a Silicon-On-Insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. The actuation electrode of the cantilever is fabricated on the handle layer, while the cantilever and XY stage are at the device layer of the SOI wafer. Two sets of electrostatic linear comb drives are used to actuate the stage mechanism in X and Y directions. The cantilever provides an out-of-plane motion of 7 microns at 4.5V, while the XY stage provides a motion range of 24 microns in each direction at the driving voltage of 180V. The resonant frequency of the XY stage under ambient conditions is 2090 Hz. A high quality factor (∼210) is achieved from this parallel kinematics XY stage. The fabricated stages will be adapted as chip-scale manufacturing and metrology devices for nanomanufacturing and nano-metrology applications.

scholarly journals An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 267 ◽  
Author(s):  
Chikako Sano ◽  
Manabu Ataka ◽  
Gen Hashiguchi ◽  
Hiroshi Toshiyoshi
Keyword(s):  
Sound Pressure ◽  
Low Voltage ◽  
Input Voltage ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Electrostatic Actuators ◽  
Microelectromechanical System ◽  
Acoustic Transducer ◽  
Out Of Plane ◽  
Dc Bias

Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a − 40   V biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A − 10   V electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of V i n = 5   V pp alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system.

Kinematically Excited Large Angle Tilting Actuator

2010 ◽  
Author(s):  
Assaf Ya’akobovitz ◽  
Slava Krylov
Keyword(s):  
Parallel Plate ◽  
Actuation Voltage ◽  
Large Angle ◽  
Single Layer ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Deep Reactive Ion Etching ◽  
Micro Actuator ◽  
Tilting Angle ◽  
Out Of Plane

We report on a novel architecture and operational principle of a large angle kinematically excited tilting micro actuator. The device transforms and amplifies small linear out-of-plane motion of a parallel-plate electrostatic transducer into a tilting motion of a plate. The device characterized by robust single layer architecture was fabricated using a silicon on insulator (SOI) wafer and common deep reactive ion etching (DRIE) based fabrication process. Experimental and model results collectively illustrate the feasibility and efficiency of the suggested actuation approach. The optical tilting angle of 37.5° was experimentally registered under relatively low actuation voltage of 100 V.

NÉEL LINES STRUCTURES IN UNIAXIAL FERROMAGNETS WITH QUALITY FACTOR Q > 1

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1947-C8-1948
Author(s):  
J. Miltat ◽  
P. Trouilloud
Keyword(s):  
Quality Factor ◽  
Quality Factor Q

scholarly journals Global optimization of an encapsulated Si/SiO$$_2$$ L3 cavity with a 43 million quality factor

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
J. P. Vasco ◽  
V. Savona
Keyword(s):  
Global Optimization ◽  
Photonic Crystal ◽  
Quality Factor ◽  
State Of The Art ◽  
Optimization Strategy ◽  
High Quality ◽  
Optimal Value ◽  
Out Of Plane ◽  
Fabrication Tolerances ◽  
Structural Imperfections

AbstractWe optimize a silica-encapsulated silicon L3 photonic crystal cavity for ultra-high quality factor by means of a global optimization strategy, where the closest holes surrounding the cavity are varied to minimize out-of-plane losses. We find an optimal value of $$Q_c=4.33\times 10^7$$ Q c = 4.33 × 10 7 , which is predicted to be in the 2 million regime in presence of structural imperfections compatible with state-of-the-art silicon fabrication tolerances.

scholarly journals 422 Million intrinsic quality factor planar integrated all-waveguide resonator with sub-MHz linewidth

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Matthew W. Puckett ◽  
Kaikai Liu ◽  
Nitesh Chauhan ◽  
Qiancheng Zhao ◽  
Naijun Jin ◽  
...  
Keyword(s):  
Quality Factor ◽  
High Capacity ◽  
Precision Spectroscopy ◽  
Narrow Linewidth ◽  
Waveguide Resonator ◽  
Environmental Disturbances ◽  
Fiber Communications ◽  
Intrinsic Quality ◽  
Quality Factor Q ◽  
Quantum Photonics

AbstractHigh quality-factor (Q) optical resonators are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration in a photonic waveguide platform is key to reducing cost, size, power and sensitivity to environmental disturbances. However, to date, the Q of all-waveguide resonators has been relegated to below 260 Million. Here, we report a Si3N4 resonator with 422 Million intrinsic and 3.4 Billion absorption-limited Qs. The resonator has 453 kHz intrinsic, 906 kHz loaded, and 57 kHz absorption-limited linewidths and the corresponding 0.060 dB m−1 loss is the lowest reported to date for waveguides with deposited oxide upper cladding. These results are achieved through a careful reduction of scattering and absorption losses that we simulate, quantify and correlate to measurements. This advancement in waveguide resonator technology paves the way to all-waveguide Billion Q cavities for applications including nonlinear optics, atomic clocks, quantum photonics and high-capacity fiber communications.

scholarly journals Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 143
Author(s):  
Sitao Fei ◽  
Hao Ren
Keyword(s):  
Quality Factor ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Cryogenic Cooling ◽  
Silicon On Insulator ◽  
Temperature Hysteresis ◽  
Sensing Applications ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Contour Mode

As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

Resistless Patterning of Magnetic Storage Media Using Ion Projection Structuring

2001 ◽  
Vol 705 ◽  
Author(s):  
A. Dietzel ◽  
R. Berger ◽  
H. Grimm ◽  
C. Schug ◽  
W. H. Bruenger ◽  
...  
Keyword(s):  
Process Development ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Magnetic Storage ◽  
Magnetic Islands ◽  
Superlattice Structure ◽  
Head Positioning ◽  
Out Of Plane ◽  
Set Up ◽  
The Impact

AbstractCo/Pt thin film multilayers with strong perpendicular anisotropy and out-of-plane coercivities of 5-11 kOe were magnetically altered in areas of local ion beam interaction. The ion irradiations were performed by ion projection through silicon stencil masks fabricated by silicon on insulator (SOI) membrane technology. The ion projector at the Fraunhofer Institute for Silicon Technology (ISiT) was operated at 73 keV ion energy and with a 8.7- fold demagnification. After exposure to 3 × 1014Ar+/ cm2 magnetic islands smaller than 100 nm in diameter were resolved in the Co/Pt multilayersby means of magnetic force microscopy. The impact of different ion species (He+, Ar+ and Xe+) and ion energies (10 – 200 keV) on the multilayer structure was evaluated using Monte Carlo simulations. The ballistic interface intermixing was used to predict magnetic coercivity changes for various irradiation conditions. The simulations revealed that with 73 keV Ar+ and Xe+ ions the irradiation dose could be reduced by a factor of 100 and 400 respectively in comparison to 73 keV He+which was verified in the experiments. X-ray reflectivity measurements confirmed that the Co/Pt superlattice structure is slightly weakened during the irradiation and that the surface smoothness of the media is preserved. Using the Ion Projection Process Development Tool (PDT) at IMS-Vienna concentric data tracks including head positioning servo informations were patterned onto a 1” IBM microdrive™ glass disk which was coated with Co/Pt multilayers. In a single exposure step several tracks within an exposure field of 17 mm in diameter were structured by 2 × 1015He+/ cm2 at 45 keV using a 4- fold demagnification set-up.

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