Optimization of Chemical Vapor Deposition Process

Author(s):  
Pradeep George ◽  
Hae Chang Gea ◽  
Yogesh Jaluria

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).


2014 ◽  
Vol 782 ◽  
pp. 619-622 ◽  
Author(s):  
Pavol Beraxa ◽  
Lucia Domovcová ◽  
Ľudovít Parilák

Along with technologies development rise demands on the technical level of new machinery and equipment and also the reliability and efficiency of tools used in the production processes. One of the options for increasing tool life and wear resistance is the use of tools surface treatment technology called as CVD (chemical vapor deposition) and PVD (Physical Vapor Deposition) process. Chemical vapor deposition is a widely used materials-processing. CVD is an atomistic surface modification process, where a thin solid coating is deposited on an underlying heated substrate via a chemical reaction from the vapor or gas phase, PVD process is atomistic deposition process in which material is vaporized from a solid or liquid source in the form of atoms or molecules, transported in the form of a vapor through a vacuum or low pressure gaseous (or plasma) environment to the substrate where it condenses. The paper introduces the possibilities of application of these processes for cold forming tools used at operating conditions of Železiarne Podbrezová, a.s. Tools (formers and straightening rolls) are evaluated in terms of CVD and PVD coating thickness, microstructure and microhardness of tool material and coating.


2000 ◽  
Vol 88 (5) ◽  
pp. 3047-3052 ◽  
Author(s):  
Toshiyuki Fujimoto ◽  
Kikuo Okuyama ◽  
Manabu Shimada ◽  
Yousuke Fujishige ◽  
Motoaki Adachi ◽  
...  

Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.


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