Particle generation and thin film surface morphology in the tetraethylorthosilicate/oxygen plasma enhanced chemical vapor deposition process

2000 ◽  
Vol 88 (5) ◽  
pp. 3047-3052 ◽  
Author(s):  
Toshiyuki Fujimoto ◽  
Kikuo Okuyama ◽  
Manabu Shimada ◽  
Yousuke Fujishige ◽  
Motoaki Adachi ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Particle Generation ◽  
Thin Film Surface

Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Precursor ◽  
Metalorganic Deposition ◽  
Constituent Elements ◽  
Film Method

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).

Surface physical property of the CrO2 thin films prepared using a closed chemical vapor deposition method

2012 ◽  
Vol 1406 ◽  
Author(s):  
Y. Muraoka ◽  
S. Yoshida ◽  
T. Wakita ◽  
M. Hirai ◽  
T. Yokoya
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Physical Property ◽  
Physical Nature ◽  
Photoemission Spectroscopy ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

ABSTRACTWe have examined the intrinsic surface physical property of a CrO2 thin film by means of surface sensitive photoemission spectroscopy. Epitaxial thin film of CrO2(100) has been grown on TiO2(100) by a closed chemical vapor deposition method using a Cr8O21 precursor. Low-energy electron diffraction (LEED) observations find that epitaxial growth of rutile-phase CrO2 occurs to the top monolayer of the film. Surface sensitive x-ray photoemission spectroscopy (XPS) measurements show a finite intensity in the region of the Fermi energy. The result evidences that the physical nature of near topmost layer of CrO2 thin film is metallic. Progress of understanding of the surface physical property of CrO2 thin film helps not only perform a reliable photoemission study to understand the physics of ferromagnetic metal in CrO2, but also develop the CrO2-based devices using a half-metallic nature for spintronics applications.

Optimization of Chemical Vapor Deposition Process

2006 ◽  
Author(s):  
Pradeep George ◽  
Hae Chang Gea ◽  
Yogesh Jaluria
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Response Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Transport Processes ◽  
Operating Conditions ◽  
Design Parameters ◽  
Large Area

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

Surface Morphology Studies of Carbon Nanotubes Prepared by Thermal Chemical Vapor Deposition Using Fermented Tapioca as a Starting Material

2013 ◽  
Vol 667 ◽  
pp. 411-414
Author(s):  
S. Aishah ◽  
M.Z. Nuraini ◽  
S.F. Nik ◽  
Mohamad Rusop
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Silicon Wafer ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Starting Material ◽  
Thermal Chemical Vapor Deposition

Carbon nanotubes (CNTs) were deposited on silicon wafer (Si) by Thermal Chemical Vapor Deposition (TCVD). The new starting material of fermented tapioca was used as carbon source. The gas flow of Argon (Ar) was constant at 70 bubbles per minute and 20 minutes of deposition time. Before the deposition process, the silicon wafer was coated with Nickel catalyst using spin coater. Various parameters such as vaporization temperature and deposition temperature have been studied. Surface morphology and uniformity were characterized using FESEM. The CNTs were structurally characterized using FESEM at different magnification to see the differences of CNTs growth at different temperature of the starting material. The surface morphology and uniformity of CNTs were dependent to parameters.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Study of SiC’s Mechanical Property Variance Caused by Film Thickness

2015 ◽  
Vol 645-646 ◽  
pp. 400-404
Author(s):  
Zong Lei Jiao ◽  
Jian Zhu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Mechanical Property ◽  
Chemical Vapor Deposition ◽  
Elastic Modulus ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Indentation Load

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm、4.5μm、9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa

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