Modeling of Chemical Vapor Deposition of Large-Area Silicon Carbide Thin Film

2006 ◽  
Vol 6 (11) ◽  
pp. 2592-2597 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma ◽  
Marc Zupan
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area

Optimization of Chemical Vapor Deposition Process

2006 ◽  
Author(s):  
Pradeep George ◽  
Hae Chang Gea ◽  
Yogesh Jaluria
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Response Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Transport Processes ◽  
Operating Conditions ◽  
Design Parameters ◽  
Large Area

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

CVD growth of large-area InS atomic layers and device applications

Nanoscale ◽  
2020 ◽  
Vol 12 (17) ◽  
pp. 9366-9374 ◽  
Author(s):  
Chien-Liang Tu ◽  
Kuang-I Lin ◽  
Jiang Pu ◽  
Tsai-Fu Chung ◽  
Chien-Nan Hsiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Indium Sulfide ◽  
Large Area ◽  
Mica Substrate ◽  
Device Applications ◽  
Cvd Growth

Indium sulfide (InS) atomic layers made by chemical vapor deposition (CVD) are synthesized onto a mica substrate, producing a highly crystalline, large-area, and atomically thin-film InS flakes.

Room Temperature Process for Chemical Vapor Deposition of Amorphous Silicon Carbide Thin Film Using Monomethylsilane Gas

2012 ◽  
Vol 1433 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Ando ◽  
Masaki Tsuji
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide

ABSTRACTThe silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Time-of-flight secondary ion mass spectrometry showed that siliconcarbon bonds existed in the obtained film, the surface of which could remain specular after the exposure to hydrogen chloride gas at 800 °C. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to easily accept the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

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