Interfacial Fluid Mechanics and Pressure Prediction in Chemical Mechanical Polishing

1999 ◽  
Vol 122 (3) ◽  
pp. 539-543 ◽  
Author(s):  
Lei Shan ◽  
Joseph Levert ◽  
Lorne Meade ◽  
John Tichy ◽  
Steven Danyluk
Keyword(s):  
Chemical Mechanical Polishing ◽  
Normal Load ◽  
Water Pressure ◽  
Fluid Pressure ◽  
Mechanical Polishing ◽  
Model Fit ◽  
Positive Pressure ◽  
Average Pressure ◽  
Interfacial Fluid ◽  
Typical Range

This paper reports on the measurement of fluid (water) pressure distribution at a soft (polyurethane) pad/steel interface. The distribution of the interfacial fluid pressure has been measured with a specially-designed fixture over the typical range of normal loads and velocities used in the chemical mechanical polishing/planarization of silicon wafers. The results show that, for most cases, the leading two-thirds of the fixture exhibits a subambient pressure, and the trailing third a positive pressure. The average pressure is sub-ambient and may be of the order of 50∼100% of the normal load applied. An analytical model has been developed to predict the magnitude and distribution of the interfacial fluid pressure. The predictions of this model fit the experimental results reasonably well, especially for low sliding velocities. [S0742-4787(00)00902-4]

Mechanical Mechanisms of Chemical Mechanical Polishing

2008 ◽  
Vol 47-50 ◽  
pp. 1486-1489
Author(s):  
Steven Danyluk ◽  
Sum Huan Ng
Keyword(s):  
Wear Rate ◽  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Fumed Silica ◽  
Normal Load ◽  
Fluid Pressure ◽  
Hydrodynamic Forces ◽  
Mechanical Polishing ◽  
Silicon Substrates ◽  
Interfacial Fluid

This paper describes a mechanical mechanism of chemical mechanical polishing (CMP) and the model is applied to the polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits. The model utilizes the concept that the polishing pad surface contains asperities that support the normal load on the wafer, and that friction and hydrodynamic forces influence wear. The interfacial fluid pressure can significantly influence the normal pressures on the wafers and its effects modify the wear rate predictions.

An Analysis of Mixed Lubrication in Chemical Mechanical Polishing

2005 ◽  
Vol 127 (2) ◽  
pp. 287-292 ◽  
Author(s):  
Sum Huan Ng ◽  
C. Fred Higgs, ◽  
Inho Yoon ◽  
Steven Danyluk
Keyword(s):  
Shear Flow ◽  
Physical Meaning ◽  
Parametric Study ◽  
Chemical Mechanical Polishing ◽  
Fluid Pressure ◽  
Mixed Lubrication ◽  
Mechanical Polishing ◽  
Ambient Fluid ◽  
Interfacial Fluid

Pressure and shear flow factors (Patir and Cheng, 1978) were used to take into account the roughness of the pad surface in the modeling of the interfacial fluid pressure during chemical mechanical polishing. An attempt was made to explain the physical meaning of the flow factors in this particular application. Additionally, a parametric study was carried out to see the effect on the model after the incorporation of the flow factors. The pressure and shear flow factors were found to have a competing effect on the magnitude of the sub-ambient fluid pressure.

Fluid pressure and its effects on chemical mechanical polishing

Wear ◽  
2002 ◽  
Vol 253 (3-4) ◽  
pp. 430-437 ◽  
Author(s):  
Chunhong Zhou ◽  
Lei Shan ◽  
J Robert Hight ◽  
S.H Ng ◽  
Steven Danyluk
Keyword(s):  
Chemical Mechanical Polishing ◽  
Fluid Pressure ◽  
Mechanical Polishing

Effects of Suspending Abrasives on the Lubrication Properties of Slurry in Chemical Mechanical Polishing of Silicon Wafer

2006 ◽  
Vol 304-305 ◽  
pp. 359-363 ◽  
Author(s):  
J.Y. Liu ◽  
Zhu Ji Jin ◽  
Dong Ming Guo ◽  
Ren Ke Kang
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Fluid Pressure ◽  
Three Dimensional ◽  
Mechanical Polishing ◽  
Polar Fluid ◽  
Light Load ◽  
Fluid Theory ◽  
Lubrication Properties ◽  
Load Conditions

The lubrication properties of the slurry between the silicon wafer and the pad in chemical mechanical polishing (CMP) are critical to the planarity of the silicon wafer. Moreover, the suspending abrasives, which are contained in the slurry, have an extremely important influence on the lubrication properties of the slurry. In the CMP process of the large-sized silicon wafers, the influence of suspending abrasives on the slurry becomes more prominent. In order to explore the effects of suspending abrasives on the lubrication properties of the slurry under the light load conditions, a three-dimensional lubrication model based on the micro-polar fluid theory is developed. The effects of suspending abrasives on the fluid pressure acting on the wafer and the distribution of the slurry film between the silicon wafer and the pad are discussed.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures
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