In Situ Measurement of Fluid Pressure at the Wafer-Pad Interface during Chemical Mechanical Polishing of 12-inch Wafer

2011 ◽  
Vol 159 (1) ◽  
pp. H22-H28 ◽  
Author(s):  
Dewen Zhao ◽  
Yongyong He ◽  
Xinchun Lu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Fluid Pressure ◽  
Mechanical Polishing ◽  
In Situ Measurement

Fluid pressure and its effects on chemical mechanical polishing

Wear ◽  
2002 ◽  
Vol 253 (3-4) ◽  
pp. 430-437 ◽  
Author(s):  
Chunhong Zhou ◽  
Lei Shan ◽  
J Robert Hight ◽  
S.H Ng ◽  
Steven Danyluk
Keyword(s):  
Chemical Mechanical Polishing ◽  
Fluid Pressure ◽  
Mechanical Polishing

Effect of pH on ceria–silica interactions during chemical mechanical polishing

2005 ◽  
Vol 20 (5) ◽  
pp. 1139-1145 ◽  
Author(s):  
Jeremiah T. Abiade ◽  
Wonseop Choi ◽  
Rajiv K. Singh
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Substrate Interaction ◽  
Atomic Force ◽  
Silica Removal

To understand the ceria–silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle–substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

Investigation of particle agglomeration with in-situ generation of oxygen bubble during the tungsten chemical mechanical polishing (CMP) process

2019 ◽  
Vol 218 ◽  
pp. 111133 ◽  
Author(s):  
Yeon-Ah Jeong ◽  
Maneesh Kumar Poddar ◽  
Heon-Yul Ryu ◽  
Nagendra Prasad Yerriboina ◽  
Tae-Gon Kim ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Particle Agglomeration ◽  
Oxygen Bubble ◽  
In Situ Generation

Effects of Suspending Abrasives on the Lubrication Properties of Slurry in Chemical Mechanical Polishing of Silicon Wafer

2006 ◽  
Vol 304-305 ◽  
pp. 359-363 ◽  
Author(s):  
J.Y. Liu ◽  
Zhu Ji Jin ◽  
Dong Ming Guo ◽  
Ren Ke Kang
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Fluid Pressure ◽  
Three Dimensional ◽  
Mechanical Polishing ◽  
Polar Fluid ◽  
Light Load ◽  
Fluid Theory ◽  
Lubrication Properties ◽  
Load Conditions

The lubrication properties of the slurry between the silicon wafer and the pad in chemical mechanical polishing (CMP) are critical to the planarity of the silicon wafer. Moreover, the suspending abrasives, which are contained in the slurry, have an extremely important influence on the lubrication properties of the slurry. In the CMP process of the large-sized silicon wafers, the influence of suspending abrasives on the slurry becomes more prominent. In order to explore the effects of suspending abrasives on the lubrication properties of the slurry under the light load conditions, a three-dimensional lubrication model based on the micro-polar fluid theory is developed. The effects of suspending abrasives on the fluid pressure acting on the wafer and the distribution of the slurry film between the silicon wafer and the pad are discussed.

In Situ Technique for Dynamic Fluid Film Pressure Measurement during Chemical Mechanical Polishing

2000 ◽  
Vol 147 (7) ◽  
pp. 2741 ◽  
Author(s):  
David Bullen ◽  
Alicia Scarfo ◽  
Alia Koch ◽  
Dewi P. Y. Bramono ◽  
Jonathan Coppeta ◽  
...  
Keyword(s):  
Pressure Measurement ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Fluid Film ◽  
Film Pressure ◽  
In Situ Technique
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