Friction mechanism and characteristics of reticle based on contact theory

2021 ◽  
pp. 1-19
Author(s):  
Jianwei Wu ◽  
Hui Wang ◽  
Tianfeng Chen ◽  
Yarui Ma ◽  
Jiwen Cui ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Static Friction ◽  
Product Yield ◽  
Contact Model ◽  
Friction Mechanism ◽  
Relative Slip ◽  
Force Microscopy ◽  
Atomic Force ◽  
Processing Cost ◽  
Adsorption Surface

Abstract With the development of integrated circuits, the structure of chips becomes more and more complex, and the processing cost increases accordingly. In order to improve the productivity of lithography, the acceleration of reticle stage should be increased to reduce the positioning time. However, the increase of acceleration will cause the relative slip between reticle and vacuum chuck, which seriously affects the accuracy and product yield of lithography. In order to suppress the slippage, the friction mechanism and characteristics between reticle and chuck are studied in this paper. Firstly, based on KE contact model and MB fractal contact model, the maximum static friction coefficient model between nano-scale surfaces was established. Then, the surface morphology parameters of reticle and chuck adsorption surface was obtained by atomic force microscopy (AFM) scanning. Finally, the maximum static friction force experiments show that the MB model is more suitable for the study of friction mechanism between reticle and vacuum chuck, and the model is more instructive for the suppression of reticle slip.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Nanoscale Patterning ◽  
Atomic Force ◽  
Probe Microscope ◽  
Molecular Manipulation

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

scholarly journals Nucleation and Growth of Supported Metal Clusters at Defect Sites on Mgo and NaCl (001) Surfaces: The Cases of Pd and Ag

1999 ◽  
Vol 570 ◽  
Author(s):  
J. A. Venables ◽  
G. Haas ◽  
H. Brune ◽  
J.H. Harding
Keyword(s):  
Deposition Temperature ◽  
Metal Clusters ◽  
Variable Temperature ◽  
Nucleation And Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Defect Sites ◽  
Wide Range ◽  
Adsorption Surface

ABSTRACTNucleation and growth of metal clusters at defect sites is discussed in terms of rate equation models, which are applied to the cases of Pd and Ag on MgO(001) and NaCl(001) surfaces. Pd/MgO has been studied experimentally by variable temperature atomic force microscopy (AFM). The island density of Pd on Ar-cleaved surfaces was determined in-situ by AFM for a wide range of deposition temperature and flux, and stays constant over a remarkably wide range of parameters; for a particular flux, this plateau extends from 200 K ≤ T ≤ 600 K, but at higher temperatures the density decreases. The range of energies for defect trapping, adsorption, surface diffusion and pair binding are deduced, and compared with earlier data for Ag on NaCl, and with recent calculations for these metals on both NaCl and MgO

AFM Interaction Forces of Lubricity Materials Surface

2012 ◽  
Vol 528 ◽  
pp. 95-98
Author(s):  
Xue Feng Li ◽  
Chu Wu ◽  
Shao Xian Peng ◽  
Jian Li
Keyword(s):  
Atomic Force Microscopy ◽  
Friction Force ◽  
Sliding Friction ◽  
Static Friction ◽  
Adhesive Force ◽  
New Method ◽  
Interaction Forces ◽  
Scanning Angle ◽  
Force Microscopy ◽  
Atomic Force

Micro interaction forces of lubricity surface of silicon and mica were studied using atomic force microscopy (AFM). From different scanning angle and bisection distance of the AFM, a new method of measuring micro static friction of lubricity surface materials was investigated. Results show that the micro coefficients of static and sliding friction of mica are less than the silicon, but the adhesive force is bigger. The mechanism of friction force of the two lubricity materials was discussed.

Application of Scanning Probe Microscopy Techniques with Electrical Modules in Via Related Defects

2012 ◽  
Author(s):  
Xiang-Dong Wang ◽  
N. David Theodore ◽  
Gil Garteiz ◽  
Paul Sanders
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
State Of The Art ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Large Size ◽  
Atomic Force ◽  
First Case ◽  
Conducting Path ◽  
Microscopy Techniques

Abstract Identifying defects in marginally failed vias has long been a challenge for failure analysis (FA) of state-of-the-art semiconductor integrated circuits. This paper presents two cases where a conventional FA approach is found to not be effective. The first case involves high resistance or marginally open vias. The second case involves early breakdown of large capacitors. The large size of the capacitor and the lack of ways to track electrical flow during diagnosis made it difficult to isolate the defect. The paper shows that conducting atomic force microscopy (C-AFM) and scanning capacitance microscopy (SCM) are effective techniques for isolation of via-related defects. The SCM technique could be applied to samples without a direct conducting path to the substrate, such as SOI samples. On the other hand, C-AFM allows current imaging as well as I-V characterization whenever a direct conductive path is available.

Influence of Wafer Grinding and Etching Techniques on the Fracture Strength of Thin Silicon Substrates

2011 ◽  
Vol 325 ◽  
pp. 659-665 ◽  
Author(s):  
Christof Landesberger ◽  
Christoph Paschke ◽  
Karlheinz Bock
Keyword(s):  
Integrated Circuits ◽  
Fracture Strength ◽  
Crystalline Silicon ◽  
Stress Relief ◽  
Strong Increase ◽  
Silicon Substrates ◽  
Mems Devices ◽  
Breaking Force ◽  
Force Microscopy ◽  
Atomic Force

We investigated the influence of various backside thinning techniques on the fracture strength of thinned single crystalline silicon wafers by means of ring-ball breaking tests and atomic force microscopy (AFM). In the case of wafer grinding the mean breaking force of samples depends on the surface roughness after fine grinding. Subsequently applied stress-relief processes spin-etching, CMP polishing and plasma dry etching lead to a strong increase of breaking force by a factor of 6 to 15. The three different stress-relief techniques resulted in the same maximum values of breaking force. However, the required amount of material removal is specifically different and also depends on the conditions of initial grinding step. The results will help to identify optimum wafer thinning sequences in the field of MEMS devices and future applications of ultra-thin and flexible integrated circuits.

Effect of Citric Acid in Chemical Mechanical Polishing (CMP) for Lithium Tantalate (LiTaO3) Wafer

2016 ◽  
Vol 1136 ◽  
pp. 305-310 ◽  
Author(s):  
Hyun Seop Lee
Keyword(s):  
Citric Acid ◽  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
High Surface ◽  
Lithium Tantalate ◽  
Mechanical Polishing ◽  
High Surface Quality ◽  
Force Microscopy ◽  
Atomic Force

Lithium tantalate (LiTaO3) has piezoelectric, electro-optical and nonlinear optical characteristics, and a wide transparency range going from ultraviolet to infrared. It is desirable that LiTaO3 wafer was a smooth surface in order to function with good quality. Chemical mechanical polishing (CMP) has been used to planarize integrated circuits (ICs) or obtain a high surface quality of the substrates. This paper investigates the effect of citric acid as an additive in the slurry for LiTaO3 CMP. The roughness of the wafers was measured by an atomic force microscopy (AFM, XE-100) after polishing. The slurry, which contains citric acid as an additive, has a higher material removal rate and friction force than a slurry without an additive. After polishing, the surface roughness of the LiTaO3 wafer can be reduced down to 1.7Å of Ra.

scholarly journals Polymer Brushes via Surface-Initiated Electrochemically Mediated ATRP: Role of a Sacrificial Initiator in Polymerization of Acrylates on Silicon Substrates

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3559 ◽  
Author(s):  
Monika Flejszar ◽  
Paweł Chmielarz ◽  
Karol Wolski ◽  
Gabriela Grześ ◽  
Szczepan Zapotoczny
Keyword(s):  
Integrated Circuits ◽  
Polymer Brushes ◽  
Supporting Electrolyte ◽  
Contact Angles ◽  
Silicon Wafers ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Essential Components ◽  
Copolymer Brushes

Silicon wafers as semiconductors are essential components of integrated circuits in electronic devices. For this reason, modification of the silicon surface is an important factor in the manufacturing of new hybrid materials applied in micro- and nanoelectronics. Herein, copolymer brushes of hydrophilic poly(2-hydroxyethyl acrylate) (PHEA) and hydrophobic poly(tert-butyl acrylate) (PtBA) were grafted from silicon wafers via simplified electrochemically mediated atom transfer radical polymerization (seATRP) according to a surface-initiated approach. The syntheses of PHEA-b-PtBA copolymers were carried out with diminished catalytic complex concentration (successively 25 and 6 ppm of Cu). In order to optimize the reaction condition, the effect of the addition of a supporting electrolyte was investigated. A controlled increase in PHEA brush thickness was confirmed by atomic force microscopy (AFM). Various other parameters including contact angles and free surface energy (FSE) for the modified silicon wafer were presented. Furthermore, the effect of the presence of a sacrificial initiator in solution on the thickness of the grafted brushes was reported. Successfully fabricated inorganic–organic hybrid nanomaterials show potential application in biomedicine and microelectronics devices, e.g., biosensors.

Surface-particle interactions in the chemical mechanical polishing process

1997 ◽  
Vol 501 ◽  
Author(s):  
J. J. Adler ◽  
Y. I. Rabinovich ◽  
R. K. Singh ◽  
B. M. Moudgil
Keyword(s):  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Difficult Problem ◽  
Mechanical Polishing ◽  
Particle Interactions ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chemical Mechanical Polishing Process ◽  
Surface Particle ◽  
The Stability

ABSTRACTChemical mechanical polishing (CMP) is a critical step in the fabrication of integrated circuits. Each layer of deposited material must be planarized before the next layer of circuitry can be formed. In CMP, a chemically active solution is used to modify the substrate so that a particulate abrasive may polish more efficiently. Modification of the surface often requires high oxidizer concentrations or pH extremes. Under these circumstances the stability of the polishing slurry and prevention of particulate attachment to the substrate is a difficult problem. In this study, atomic force microscopy (AFM) has been used to directly measure the forces between surfaces that simulate those in CMP. Initial investigation has focused on modeling the polishing of tungsten interconnect material by alumina slurries at acidic pH and evaluating the role surfactants can play in the stabilization of the polishing slurry and CMP processes.

Effect of Temperature on Defect Generation during Copper Chemical Mechanical Planarization

2005 ◽  
Vol 867 ◽  
Author(s):  
Subrahmanya Mudhivarthi ◽  
Parshuram Zantyea ◽  
Ashok Kumara ◽  
Jeung-Yeop Shim
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Heat Generation ◽  
Chemical Mechanical Planarization ◽  
Effect Of Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Significant Process ◽  
Different Temperatures ◽  
Multi Level

AbstractChemical Mechanical Planarization (CMP) is the process of choice for planarization of the constituent layers of the Multi Level Metallization schemes in modern Integrated Circuits. Besides having a lot of advantages, copper CMP process still needs significant process control to eliminate defects such as delamination, microscratches, dishing, erosion etc. In this research, effect of heat generated at the interface on the generation of CMP defects has been investigated. CMP of blanket and patterned samples has been carried out at two conditions of pressure x velocity values with varying slurry temperature. Post CMP metrology is carried out using Atomic force microscopy (AFM) in order to characterize the variation in scratch depth, dishing profile and non-uniformity in step coverage. Pictures of the patterned samples polished at different temperatures are captured using Optical Microscopy (OM) to study the dishing and dissolution of copper lines in greater detail. The primary goal of this study was to gain deeper understanding of the effect of heat generation and rise in temperature at the pad-wafer-slurry interface on CMP induced defectivity.

Sign in / Sign up

Export Citation Format

Share Document