scholarly journals Polymer Brushes via Surface-Initiated Electrochemically Mediated ATRP: Role of a Sacrificial Initiator in Polymerization of Acrylates on Silicon Substrates

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3559 ◽  
Author(s):  
Monika Flejszar ◽  
Paweł Chmielarz ◽  
Karol Wolski ◽  
Gabriela Grześ ◽  
Szczepan Zapotoczny
Keyword(s):  
Integrated Circuits ◽  
Polymer Brushes ◽  
Supporting Electrolyte ◽  
Contact Angles ◽  
Silicon Wafers ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Essential Components ◽  
Copolymer Brushes

Silicon wafers as semiconductors are essential components of integrated circuits in electronic devices. For this reason, modification of the silicon surface is an important factor in the manufacturing of new hybrid materials applied in micro- and nanoelectronics. Herein, copolymer brushes of hydrophilic poly(2-hydroxyethyl acrylate) (PHEA) and hydrophobic poly(tert-butyl acrylate) (PtBA) were grafted from silicon wafers via simplified electrochemically mediated atom transfer radical polymerization (seATRP) according to a surface-initiated approach. The syntheses of PHEA-b-PtBA copolymers were carried out with diminished catalytic complex concentration (successively 25 and 6 ppm of Cu). In order to optimize the reaction condition, the effect of the addition of a supporting electrolyte was investigated. A controlled increase in PHEA brush thickness was confirmed by atomic force microscopy (AFM). Various other parameters including contact angles and free surface energy (FSE) for the modified silicon wafer were presented. Furthermore, the effect of the presence of a sacrificial initiator in solution on the thickness of the grafted brushes was reported. Successfully fabricated inorganic–organic hybrid nanomaterials show potential application in biomedicine and microelectronics devices, e.g., biosensors.

Influence of Wafer Grinding and Etching Techniques on the Fracture Strength of Thin Silicon Substrates

2011 ◽  
Vol 325 ◽  
pp. 659-665 ◽  
Author(s):  
Christof Landesberger ◽  
Christoph Paschke ◽  
Karlheinz Bock
Keyword(s):  
Integrated Circuits ◽  
Fracture Strength ◽  
Crystalline Silicon ◽  
Stress Relief ◽  
Strong Increase ◽  
Silicon Substrates ◽  
Mems Devices ◽  
Breaking Force ◽  
Force Microscopy ◽  
Atomic Force

We investigated the influence of various backside thinning techniques on the fracture strength of thinned single crystalline silicon wafers by means of ring-ball breaking tests and atomic force microscopy (AFM). In the case of wafer grinding the mean breaking force of samples depends on the surface roughness after fine grinding. Subsequently applied stress-relief processes spin-etching, CMP polishing and plasma dry etching lead to a strong increase of breaking force by a factor of 6 to 15. The three different stress-relief techniques resulted in the same maximum values of breaking force. However, the required amount of material removal is specifically different and also depends on the conditions of initial grinding step. The results will help to identify optimum wafer thinning sequences in the field of MEMS devices and future applications of ultra-thin and flexible integrated circuits.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Nanoscale Patterning ◽  
Atomic Force ◽  
Probe Microscope ◽  
Molecular Manipulation

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

scholarly journals Synthesis of amphiphilic ABA triblock oligomer via ATRP and its surface properties

2017 ◽  
Vol 95 (5) ◽  
pp. 605-611 ◽  
Author(s):  
Lei Wang ◽  
Shaoqing Wen ◽  
Zhanxiong Li
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microphase Separation ◽  
Gel Permeation Chromatography ◽  
Contact Angles ◽  
Chemical Compositions ◽  
Water Contact ◽  
Force Microscopy ◽  
Atomic Force ◽  
Poly Ethylene ◽  
Magnetic Resonances

A series of novel amphiphilic ABA-type poly(tridecafluorooctylacrylate)-poly(ethylene glycol)-poly(tridecafluorooctylacrylate) (henceforth referred to as p-TDFA-PEG-p-TDFA) triblock oligomers were successfully synthesized via atom transfer radical polymerization (ATRP) using well-defined Br-PEG-Br as macroinitiator and copper as catalyst. The block oligomers were characterized by Fourier transform infrared (FTIR) spectroscopy and 1H and 19F nuclear magnetic resonances (NMR). Gel permeation chromatography (GPC) showed that the block oligomers have been obtained with narrow molecular weight distributions of 1.22–1.33. X-ray photoelectron spectroscopy (XPS) was carried out to confirm the attachment of p-TDFA-PEG-p-TDFA onto the silicon substrate, together with the chemical compositions of p-TDFA-PEG-p-TDFA. The wetabilities of the oligomer films were measured by water contact angles (CAs). Water CAs of p-TDFA-PEG-p-TDFA film were measured and their morphologies were tested by atomic force microscopy (AFM). The result showed that the CAs of the oligomer films, which possess fluoroalkyl groups assembled on the outer surface, increase after heating due to the migration of fluoroalkyl groups and the resulted microphase separation of the p-TDFA-PEG-p-TDFA.

scholarly journals Influence of the Microstructure and Optical Constants on Plasmonic Properties of Copper Nanolayers

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7292
Author(s):  
Tomasz Rerek ◽  
Beata Derkowska-Zielinska ◽  
Marek Trzcinski ◽  
Robert Szczesny ◽  
Mieczyslaw K. Naparty ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Photoelectron Spectroscopy ◽  
Surface Plasmon Polariton ◽  
Optical Constants ◽  
Localized Surface Plasmon ◽  
Silicon Substrates ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Plasmon Polariton

Copper layers with thicknesses of 12, 25, and 35 nm were thermally evaporated on silicon substrates (Si(100)) with two different deposition rates 0.5 and 5.0 Å/s. The microstructure of produced coatings was studied using atomic force microscopy (AFM) and powder X-ray diffractometer (XRD). Ellipsometric measurements were used to determine the effective dielectric functions <ε˜> as well as the quality indicators of the localized surface plasmon (LSP) and the surface plasmon polariton (SPP). The composition and purity of the produced films were analysed using X-ray photoelectron spectroscopy (XPS).

A novel approach for measuring the intrinsic nanoscale thickness of polymer brushes by means of atomic force microscopy: application of a compressible fluid model

Nanoscale ◽  
2013 ◽  
Vol 5 (23) ◽  
pp. 11679 ◽  
Author(s):  
José Luis Cuellar ◽  
Irantzu Llarena ◽  
Jagoba J. Iturri ◽  
Edwin Donath ◽  
Sergio Enrique Moya
Keyword(s):  
Atomic Force Microscopy ◽  
Compressible Fluid ◽  
Polymer Brushes ◽  
Fluid Model ◽  
Force Microscopy ◽  
Atomic Force ◽  
Novel Approach

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

scholarly journals UV Sensitivity of Indium-Zinc Oxide Nanofibers

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Nadezhda Markova ◽  
Olga Berezina ◽  
Nikolay Avdeev ◽  
Alexander Pergament
Keyword(s):  
Zinc Oxide ◽  
Indium Content ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Indium Zinc Oxide ◽  
Electrospinning Method ◽  
Recovery Times ◽  
Response And Recovery

Indium-zinc oxide (IZO) nanofiber matrices are synthesized on SiO2-covered silicon substrates by the electrospinning method. The nanofibers’ dimensions, morphology, and crystalline structure are characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results of studying the electrical properties of nanofibers, as well as their sensitivity to UV radiation depending on the In-to-Zn concentration ratio, are presented. It is shown that the highest sensitivity to UV is observed at the indium content of about 50 atomic %. The photocurrent increment with respect to the dark current is more than 4 orders of magnitude. The response and recovery times are 60 and 500 sec, respectively. The results obtained suggest that IZO nanofibers can find application as UV sensors with improved characteristics.

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