scholarly journals Design, Analysis, Comparison, and Experimental Validation of Insulated Metal Substrates for High-Power Wide-Bandgap Power Modules

2020 ◽  
Vol 142 (4) ◽  
Author(s):  
Emre Gurpinar ◽  
Burak Ozpineci ◽  
Shajjad Chowdhury
Keyword(s):  
Steady State ◽  
Thermal Performance ◽  
High Power ◽  
Coefficient Of Thermal Expansion ◽  
Wide Bandgap ◽  
Design Analysis ◽  
Dielectric Thickness ◽  
Metal Substrates ◽  
Power Modules ◽  
Transient Thermal

Abstract Direct bonded copper (DBC) substrates used in power modules have limited heat spreading and manufacturing capability due to ceramic properties and manufacturing technology. The ceramic and copper bonding is also subject to high mechanical stress due to coefficient of thermal expansion mismatch between the copper and the ceramic. For wide-bandgap (WBG) devices, it is of interest exploring new substrate technologies that can overcome some of the challenges of direct bonded copper substrates. In this technical paper, the design, analysis, and comparison of insulated metal substrates (IMSs) for high-power wide-bandgap semiconductor-based power modules are discussed. This paper starts with technical description and discussion of state-of-the-art DBC substrates with different ceramic insulators such as aluminum nitride (AlN), Al2O3, and Si3N4. Next, an introduction of IMSs and their material properties, and a design approach for SiC (silicon carbide) metal-oxide-semiconductor field-effect transistor (MOSFET)-based power modules for high-power applications is provided. The influence of dielectric thickness on the power handling capability of the substrate are also discussed. The designed IMS and DBC substrates were characterized in terms of steady-state and transient thermal performance using finite element simulation. Finally, the performance of the IMS and DBC are validated in an experimental setup under different loading and cooling temperature conditions. The simulation and experimental results showed that the IMS can provide high steady-state thermal performance for high-power modules based on SiC MOSFETs. Furthermore, the IMS provided enhanced transient thermal performance, which provided a reduced junction temperature when the module is operated at low fundamental output frequencies in traction drive systems.

scholarly journals Design, Analysis and Comparison of Insulated Metal Substrates for High Power Wide-Bandgap Power Modules

2019 ◽  
Author(s):  
Emre Gurpinar ◽  
Burak Ozpineci ◽  
Shajjad Chowdhury
Keyword(s):  
High Power ◽  
Wide Bandgap ◽  
Design Analysis ◽  
Design Approach ◽  
Element Analysis ◽  
Promising Alternative ◽  
Dielectric Thickness ◽  
Metal Substrates ◽  
Power Modules ◽  
Transient Thermal

Abstract In this technical paper, design, analysis and comparison of insulated metal substrates for high power wide-bandgap semiconductor-based power modules is discussed. The paper starts with technical description and discussion of state-of-the-art direct bonded copper substrates with different ceramic insulators such as AlN, Al2O3 and Si3N4. This is followed by introduction of insulated metal substrates, material properties and options on each layer, and design approach for high power applications. The properties of dielectric thickness, and impact on power handling capability of the substrate are discussed. Insulated metal substrate design approach for SiC MOSFET based power modules is presented. Finite element analysis-based characterization and comparison of different designs including steady-state and transient thermal response is presented. The results show that IMS is a promising alternative to DBC in high power modules with improved transient thermal performance. IMS provides flexible building structure with multi-layer stacking options and variable thicknesses at different layers.

Optimal design analysis for thermal performance of high power 2.5D package

2016 ◽  
Vol 37 (3) ◽  
pp. 035006 ◽  
Author(s):  
Xiaoyang Liu ◽  
He Ma ◽  
Daquan Yu ◽  
Wenlu Chen ◽  
Xiaolong Wu
Keyword(s):  
Optimal Design ◽  
Thermal Performance ◽  
High Power ◽  
Design Analysis

Steady-State and Transient Thermal Performance of Subsea Hardware

1998 ◽  
Vol 13 (02) ◽  
pp. 108-113 ◽  
Author(s):  
G.J. Zabaras ◽  
Jianfeng Zhang
Keyword(s):  
Steady State ◽  
Thermal Performance ◽  
Transient Thermal

scholarly journals Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
James Spencer Lundh ◽  
Yiwen Song ◽  
Bikramjit Chatterjee ◽  
Albert G. Baca ◽  
Robert J. Kaplar ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Imaging ◽  
Thermal Characterization ◽  
High Electron Mobility Transistor ◽  
Wide Bandgap ◽  
High Electron ◽  
Thermal Dynamics ◽  
Practical Applications ◽  
Self Heating ◽  
Transient Thermal

Abstract Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

Transient Thermal Performance of IGBT Power Modules Attached by Low-Temperature Sintered Nanosilver

2012 ◽  
Vol 12 (1) ◽  
pp. 124-132 ◽  
Author(s):  
Gang Chen ◽  
Dan Han ◽  
Yun-Hui Mei ◽  
Xiao Cao ◽  
Tao Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Performance ◽  
Power Modules ◽  
Transient Thermal

System Level Transient Thermal Performance of High-Power Dynamic Microelectronics

2009 ◽  
Author(s):  
Victor Chiriac
Keyword(s):  
Steady State ◽  
High Power ◽  
Superposition Principle ◽  
Peak Temperature ◽  
System Level ◽  
Final Temperature ◽  
Thermal Budget ◽  
Power Dynamic ◽  
Current Limit ◽  
Transient Thermal

System-level thermal transient analysis of High-Power Dynamic Microelectronics System is performed using numerical simulations. The SmartMOS-type device is packaged in 20 lead SOIC module with exposed copper slug. The package is attached to 4-layer PCB with embedded thermal vias. The challenge resides in the transient thermal interaction between the dynamic heat sources (high/low side motors), activated simultaneously at different powering profiles. Several operating steps are simulated, and the transient thermal behavior for each source is analyzed then optimized during the process. The low side motor reaches a peak temperature of ∼126.1°C at 2.25s, while the final temperature reached by the motor after one cycle (2.565 s) is ∼75.9°C. The DC current limit study indicates that the current over 1A exceeds the thermal budget. The case with 0.5A current limit reaches 135°C after 4 cycles, satisfying the thermal budget. Additional studies for an equivalent system were performed with only the high side driver actively dissipating 120W for 2.56 ms. The peak temperature reached by the system during the first cycle (2.56 us) is ∼65°C. Analytical study was performed to evaluate the steady state (final) temperature after a large number of dynamic powering cycles, based on heating/cooling behavior and superposition principle. The peak temperature reached by the IC will not exceed 92°C (using the steady state value and the temperature fluctuations per transient cycle). A correlation to predict the peak temperatures reached by the dynamic system after a long number of powering cycles is provided.

Thermal Performance Evaluation of New Power QFN (Quad Flat No Lead) Packages for Automotive Applications

2004 ◽  
Author(s):  
Victor Chiriac ◽  
Tien-Yu Tom Lee
Keyword(s):  
Steady State ◽  
Thermal Performance ◽  
Numerical Study ◽  
Peak Temperature ◽  
Junction Temperature ◽  
Automotive Applications ◽  
Isothermal Boundary ◽  
Die Attach ◽  
Transient Thermal ◽  
The Impact

An extensive 3-D conjugate numerical study is conducted to assess the thermal performance of the novel Power Quad Flat No Lead (PQFN) packages for automotive applications. Several PQFN packages are investigated, ranging from smaller die/flag size to larger ones, single or multiple heat sources, operating under various powering and boundary conditions. The steady state and transient thermal performance are compared to those of the classical packages, and the impact of the thicker lead frame and die attach material on the overall thermal behavior is also evaluated. Under one steady state (1W) operating scenario, the PQFN package reaches a peak temperature of ~106.3°C, while under 37W@40ms of transient powering, the peak temperature reached by the corner FET is ~260.8°C. With an isothermal boundary (85°C) attached to the board backside, the junction temperature does not change, as the PCB has no significant thermal impact. However, when the isothermal boundary is attached to package bottom, it leads to a drop in by almost 20% after 40 ms. Additional transient cases are evaluated, with an emphasis on the superior thermal performance of this new class of power packages for automotive applications.

Steady-State and Transient Thermal Performance Optimization of Power Automotive Modules

2009 ◽  
Author(s):  
Victor Chiriac
Keyword(s):  
Steady State ◽  
Thermal Performance ◽  
Numerical Study ◽  
Peak Temperature ◽  
System Level ◽  
Main Concern ◽  
Thermal Impact ◽  
Automotive Applications ◽  
Isothermal Boundary ◽  
Transient Thermal

An extensive 3-D conjugate numerical study is conducted to assess the thermal performance of power packages for automotive applications. The automotive industry deals on a daily basis with various package and module-level thermal issues when managing the routing of very high current. The study provides a better understanding of the strengths and weaknesses of IC incorporation into a system module, for present and future product development. Several packages are investigated, ranging from smaller die/flag size to larger ones, single or multiple heat sources, operating under various powering and boundary conditions. The steady state and transient thermal impact of the thicker lead frame and die attach material on the overall thermal behavior is evaluated. The main concern is exceeding the thermal budget at an external ambient temperature of 85°C, specific for the relatively extreme automotive operating environments. Under one steady state (1W) operating scenario, the PQFN package reaches a peak temperature of ∼106.3°C, while under 37W@40ms of transient powering, the peak temperature reached by the corner FET is ∼260.8°C. With an isothermal boundary (85°C) attached to the board backside, the junction temperature does not change, as the PCB has no significant thermal impact. When the isothermal boundary is attached to package bottom, peak temperature drops by 20% after 40 ms. Additional system level with multiple optimized packages placed on a custom PCB is evaluated numerically and experimentally, placing an emphasis on the superior thermal performance of this new class of power packages for automotive applications. The optimized numerical model approximates closely the empirical results (121–126°C vs. 127.5°C), within 1–2%.

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