Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process

2013 ◽  
Vol 135 (6) ◽  
Author(s):  
Jiandong Meng ◽  
Yogesh Jaluria
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Operating Conditions ◽  
Operating Pressure ◽  
Reactor Performance ◽  
Metalorganic Chemical

A detailed mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed first, and the complete chemical mechanisms are introduced. Then, one validation study is conducted to ensure its accuracy. After that, the flow, temperature and concentration profiles are predicted by numerical modeling. The dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process, with respect to production rate and film quality.

Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition of InP and Related Materials

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Katz ◽  
A. Feingold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Low Pressure ◽  
Growth Conditions ◽  
Metalorganic Chemical

ABSTRACTHigh quality InP and In0.53Ga0.67As undoped and Zn-doped layers were grown by means of rapid thermal low pressure metalorganic chemical vapor deposition (RTLPMOCVD) technique, using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA), as the phosphorus and arsenic sources. The InP films were grown at a P:In ratios of about 75 and the InGaAs films were grown at a As:In ration of about 2, low temperatures at the range of 450-550°C, pressures it the range of 1-4 tons, and growth rates of 2-3 nm/sec. All the film growth conditions were optimized to yield defect-free layers with featureless morphology, which reflected at a minimum backscattering yield (Xmin) as low as 3.1% for the InP and 3.6% for the InGaAs. These films presented a good electrical properties, as well, with hole mobility of 4200 cm2/Vs for the undoped-InP layers and 75 cm2/Vs for the undoped-InGaAs layers.

High Quality YBaCuO Thin Film Growth by Low-Temperature Metalorganic Chemical Vapor Deposition Using Nitrous Oxide

1993 ◽  
Vol 335 ◽  
Author(s):  
Hideaki Zama ◽  
Jun Saga ◽  
Takeo Hattor ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Unit Cell ◽  
Temperature Growth ◽  
First Time ◽  
Metalorganic Chemical

AbstractLow-temperature growth of YBa2Cu3Ox films by metalorganic chemical vapor deposition using N2O as an oxidizing agent has been investigated. We have deposited superconducting YBa2Cu3Ox on (100)MgO substrates at 500°C for the first time. Films of 15nm-thick show zero-resistivity critical temperature of 80K. Films of as thin as three unit-cell-thick reveal the superconducting onset characteristics. This result suggests that superconductivity is arisen even from effectively monomolecular layer of YBa2Cu3Ox when we take into account monomolecular buffer layer and monomolecular cap layer. YBa2Cu3Ox films of 9nm-thick grown on (100)SrTiO3 at 600°C with Tc(zero) of 79K and with peak to valley roughness fluctuation of two unit-cell have been obtained.

Zn1-xCdxO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 43 (No. 8B) ◽  
pp. L1088-L1090 ◽  
Author(s):  
Satoshi Shigemori ◽  
Atsushi Nakamura ◽  
Junji Ishihara ◽  
Toru Aoki ◽  
Jiro Temmyo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Metalorganic Chemical

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

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