Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition of InP and Related Materials

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Katz ◽  
A. Feingold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Low Pressure ◽  
Growth Conditions ◽  
Metalorganic Chemical

ABSTRACTHigh quality InP and In0.53Ga0.67As undoped and Zn-doped layers were grown by means of rapid thermal low pressure metalorganic chemical vapor deposition (RTLPMOCVD) technique, using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA), as the phosphorus and arsenic sources. The InP films were grown at a P:In ratios of about 75 and the InGaAs films were grown at a As:In ration of about 2, low temperatures at the range of 450-550°C, pressures it the range of 1-4 tons, and growth rates of 2-3 nm/sec. All the film growth conditions were optimized to yield defect-free layers with featureless morphology, which reflected at a minimum backscattering yield (Xmin) as low as 3.1% for the InP and 3.6% for the InGaAs. These films presented a good electrical properties, as well, with hole mobility of 4200 cm2/Vs for the undoped-InP layers and 75 cm2/Vs for the undoped-InGaAs layers.

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

Structural and Optical Analysis of GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 517 ◽  
pp. 5-8
Author(s):  
F.K. Yam ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan ◽  
M.E. Kordesch
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Phonon Mode ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

This paper presents an analysis of the characteristics of two gallium nitride (GaN) films grown on (0001) plane sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD) is presented. The GaN films were characterized by a variety of methods, including scanning electron microscopy (SEM), x-ray diffraction (XRD), photoluminescence (PL), and Raman scattering. SEM micrographs revealed that different growth conditions will lead to different surface morphology of the films. XRD measurements indicated that both films were highly oriented and mono crystalline. PL spectra for both samples exhibited an intense and sharp band edge peak at 3.42 eV with full width at half maximum (FWHM) of 15 and 35 meV respectively. Raman scattering showed that the peaks of E2(high) phonon mode were observed at 568.1 and 570.1 cm-1 respectively. The different growth mode of these films were linked to the growth conditions, in which the growth mechanism could be correlated with the shift of E2(high) phonon mode in Raman scattering.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

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