scholarly journals Reliability Assessment and Activation Energy Study of Au and Pd-Coated Cu Wires Post High Temperature Aging in Nanoscale Semiconductor Packaging

2013 ◽  
Vol 135 (2) ◽  
Author(s):  
C. L. Gan ◽  
U. Hashim
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Semiconductor Device ◽  
Formation Rate ◽  
Technical Information ◽  
Ball Bond ◽  
Fine Pitch ◽  
Bga Package ◽  
Ball Bonds ◽  
Reliability Performance

Wearout reliability and high temperature storage life (HTSL) activation energy of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the influence of wire type on the wearout reliability performance of Au and PdCu wire used in fine pitch BGA package after HTSL stress at various aging temperatures. Failure analysis has been conducted to identify the failure mechanism after HTSL wearout conditions for Au and PdCu ball bonds. Apparent activation energies (Eaa) of both wire types are investigated after HTSL test at 150 °C, 175 °C and 200 °C aging temperatures. Arrhenius plot has been plotted for each ball bond types and the calculated Eaa of PdCu ball bond is 0.85 eV and 1.10 eV for Au ball bond in 110 nm semiconductor device. Obviously Au ball bond is identified with faster IMC formation rate with IMC Kirkendall voiding while PdCu wire exhibits equivalent wearout and or better wearout reliability margin compare to conventional Au wirebond. Lognormal plots have been established and its mean to failure (t50) have been discussed in this paper.

scholarly journals Wearout Reliability and Intermetallic Compound Diffusion Kinetics of Au and PdCu Wires Used in Nanoscale Device Packaging

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
C. L. Gan ◽  
E. K. Ng ◽  
B. L. Chan ◽  
F. C. Classe ◽  
T. Kwuanjai ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Semiconductor Device ◽  
Technical Information ◽  
Diffusion Kinetics ◽  
Nanoscale Device ◽  
Bga Packages ◽  
Fine Pitch ◽  
Ball Bonds ◽  
Reliability Performance ◽  
Kinetics Of

Wearout reliability and diffusion kinetics of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the HAST (with bias) and UHAST (unbiased HAST) wearout reliability performance of Au and PdCu wires used in fine pitch BGA packages. In-depth failure analysis has been carried out to identify the failure mechanism under various wearout conditions. Intermetallic compound (IMC) diffusion constants and apparent activation energies (Eaa) of both wire types were investigated after high temperature storage life test (HTSL). Au bonds were identified to have faster IMC formation, compared to slower IMC growth of PdCu. PdCu wire was found to exhibit equivalent or better wearout reliability margin compared to conventional Au wire bonds. Failure mechanisms of Au, Cu ball bonds post-HAST and UHAST tests are been proposed, and both Au and PdCu IMC diffusion kinetics and their characteristics are discussed in this paper.

scholarly journals Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
C. L. Gan ◽  
E. K. Ng ◽  
B. L. Chan ◽  
U. Hashim ◽  
F. C. Classe
Keyword(s):  
Success Factors ◽  
Bonding Parameters ◽  
Green Mold ◽  
Fine Pitch ◽  
Bga Package ◽  
Bond Interface ◽  
Ball Bonds ◽  
Cu Bonding ◽  
Reliability Performance ◽  
Intermetal Dielectric

Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric) cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased HAST) reliability performance of Cu wire used in fine-pitch BGA package. In-depth failure analysis has been carried out to identify the failure mechanism under various assembly conditions. Obviously green mold compound, low-halogen substrate, optimized Cu bonding parameters, assembly staging time after wirebonding, and anneal baking after wirebonding are key success factors for Cu wire development in nanoelectronic packaging. Failure mechanisms of Cu ball bonds after UHAST test and CuAl IMC failure characteristics have been proposed and discussed in this paper.

High Temperature Storage Reliability of Bond Resistance of Palladium-Coated Copper Ball Bonds

2017 ◽  
Vol 2017 (1) ◽  
pp. 000432-000437 ◽  
Author(s):  
Michael David Hook ◽  
Michael Mayer ◽  
Stevan Hunter
Keyword(s):  
High Temperature ◽  
Ball Bond ◽  
Wire Bonds ◽  
High Temperature Storage ◽  
Ball Bonding ◽  
Ball Bonds ◽  
Bond Pads ◽  
Wire Resistance ◽  
Temperature Storage

Abstract Reliability of wire bonds made with palladium-coated copper (PCC) wire of 25 μm diameter is studied by measuring the wire bond resistance increase over time in high temperature storage at 225 °C. Ball bonds are made on two bond pad thicknesses and tested with and without mold compound encapsulation. Bond pads are aluminum copper (Al-0.5%Cu), 800 nm and 3000 nm thick. The wirebonding pattern is arranged to facilitate 4-wire resistance measurements of 12 bond pairs in each 28-pin ceramic test package. The ball bonding recipe is optimized to minimize splash on 3000 nm Al-0.5%Cu with shear strength at least 120 MPa. Ball bond diameter is 61 μm and height is 14 μm. Measurements include bond shear test data and in-situ resistance before and during high temperature storage. Bonds on 3000 nm pads are found to be significantly more reliable than bonds on 800 nm pads within 140 h of aging.

scholarly journals Thermal Aging Behavior of Fine Pitch Palladium Coated Silver (PCS) Ball Bonds on Al Metallization

2015 ◽  
Vol 2015 (1) ◽  
pp. 000298-000304 ◽  
Author(s):  
Di Erick Xu ◽  
Jimy Gomes ◽  
Michael Mayer ◽  
Rob Lyn ◽  
John Persic
Keyword(s):  
Failure Modes ◽  
Layer Growth ◽  
High Price ◽  
Cross Sectional ◽  
Ball Bond ◽  
Pull Test ◽  
Fine Pitch ◽  
Bond Interface ◽  
Ball Bonds ◽  
Al Metallization

The high price of Au has motivated many to look for alternative bonding wire materials in the field of microelectronics packaging. In the present study, the reliability performance of palladium coated silver (PCS) wire in high temperature storage test (HTST) is carried out using 18 μm diameter fine pitch PCS wire. Fine pitch ball bonds are made on Al metallization, with bonded ball diameter (BBD) of 32 ± 0.5 μm and ball height (BH) of 8 ± 0.5 μm. The aging temperature used in HTST is 170 °C and both shear and pull test are used to evaluate the aged ball bonds at regular time intervals. The shear force increases from 9.9 gf at 96 h to 12.5 gf at 192 h, and remains almost constant until 1344 h, and starts dropping gradually until 10.9 gf at 1848 h. The pad lift percentage recorded in pull test gradually drops from 90 % at 96 h to 20 % at 1008 h, and increases to 90 % at 1848 h. The chip side fractography after shear test indicates that the main failure modes are through pad at 96 h, through ball bond at 504 h, and half of both at 168 h, respectively. Cross-sectional images show that the thickness of the intermetallic compound (IMC) layer growth follows parabolic relationship and the rate constant is 0.10 ± 0.02 μm/h½. Gaps are observed along the periphery of the ball bond interface where no IMC is observed. The IMCs are located at the center of the ball bond interface, and the width is 16.0–19.3 μm at 96 h and 17.2–22.7 μm at 1344 h, respectively.

Improvement of High-Temperature Reliability of Ball Bond Using Platinum-Modified Gold Alloy Wires

2007 ◽  
Vol 4 (2) ◽  
pp. 45-50 ◽  
Author(s):  
Kazunari Maki ◽  
Yuji Nakata ◽  
Masayoshi Nagao ◽  
Akifumi Mishima
Keyword(s):  
High Temperature ◽  
Thermal Aging ◽  
Gold Alloy ◽  
Microstructural Analysis ◽  
Ball Bond ◽  
Ball Shear ◽  
Aging Test ◽  
Bond Degradation ◽  
Bonding Wires ◽  
Ball Bonds

For superior Au/Al ball-bond reliability, we have developed the 3N (>99.9 wt% Au), 2N5 (>99.5 wt% Au) and 2N (>99 wt% Au) Au alloy bonding wires which contain less than 0.1, 0.5 and 1 wt% Pt, respectively. In the thermal aging test of squashed balls (40 μm in diameter), which consists of storage in air at 250°C and evaluation with wire pull and ball shear, it has been found that there are interesting differences in the ball-bond degradation as a function of wire type. Even the samples bonded using the 3N wire with a very small amount of Pt show superior ball-bond reliability compared with those using a 4N (>99.99 wt% Au) wire without any addition of Pt. The ball-bond degradation in the thermal aging test is reduced significantly with increasing Pt content of a wire. From microstructural analysis of the aged 2N ball bonds, the Pt-containing layer, which seems to play a crucial role in improvement of the ball-bond reliability, have been found in the upper part of intermetallic compounds.

Kinetics of Desulfuration Product Sulphoaluminate Calcium

2010 ◽  
Vol 113-116 ◽  
pp. 1814-1817 ◽  
Author(s):  
Hui Ling Guo ◽  
Jun Lin Xie
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Formation Rate ◽  
Experimental Investigations ◽  
Exponential Factor ◽  
First Order ◽  
First Order Kinetics ◽  
Formation Kinetics ◽  
Competitive Reactions ◽  
Kinetics Of

The formation kinetics of sulphoaluminate calcium was studied by variations of sulfur release with time from SC-132 based on competitive reactions, the generation of sulphoaluminate calcium and the decomposition of CaSO4. Experimental investigations and theoretical derivations show that the formation rate of sulphoaluminate calcium can be described as first-order kinetics at high temperature, and it belongs to the mechanism of random nucleus growth. The apparent activation energy is 456.37 KJ•mol-1 and pre-exponential factor is 1.545×1012.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

scholarly journals High-Temperature Deformation of Naturally Aged 7010 Aluminum Alloy

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 581
Author(s):  
Abdulhakim A. Almajid
Keyword(s):  
Activation Energy ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Threshold Stress ◽  
Activation Energies ◽  
Temperature Deformation ◽  
High Temperature Range ◽  
Temperature Range ◽  
True Activation Energy ◽  
Two Temperatures

This study is focused on the deformation mechanism and behavior of naturally aged 7010 aluminum alloy at elevated temperatures. The specimens were naturally aged for 60 days to reach a saturated hardness state. High-temperature tensile tests for the naturally aged sample were conducted at different temperatures of 573, 623, 673, and 723 K at various strain rates ranging from 5 × 10−5 to 10−2 s−1. The dependency of stress on the strain rate showed a stress exponent, n, of ~6.5 for the low two temperatures and ~4.5 for the high two temperatures. The apparent activation energies of 290 and 165 kJ/mol are observed at the low, and high-temperature range, respectively. These values of activation energies are greater than those of solute/solvent self-diffusion. The stress exponents, n, and activation energy observed are rather high and this indicates the presence of threshold stress. This behavior occurred as a result of the dislocation interaction with the second phase particles that are existed in the alloy at the testing temperatures. The threshold stress decreases in an exponential manner as temperature increases. The true activation energy was computed by incorporating the threshold stress in the power-law relation between the stress and the strain. The magnitude of the true activation energy, Qt dropped to 234 and 102 kJ/mol at the low and high-temperature range, respectively. These values are close to that of diffusion of Zinc in Aluminum and diffusion of Magnesium in Aluminum, respectively. The Zener–Hollomon parameter for the alloy was developed as a function of effective stress. The data in each region (low and high-temperature region) coalescence in a segment line in each region.

The activation energy U(T,B) in high temperature superconductor

2020 ◽  
Vol 92 (2) ◽  
pp. 20601
Author(s):  
Abdelaziz Labrag ◽  
Mustapha Bghour ◽  
Ahmed Abou El Hassan ◽  
Habiba El Hamidi ◽  
Ahmed Taoufik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Phase Diagram ◽  
High Temperature ◽  
Apparent Activation Energy ◽  
High Temperature Superconductor ◽  
Flux Flow ◽  
Resistivity Measurements ◽  
Vortex Phase ◽  
The Magnetic Field

It is reported in this paper on the thermally assisted flux flow in epitaxial YBa2Cu3O7-δ deposited by Laser ablation method on the SrTiO3 substrate. The resistivity measurements ρ (T, B) of the sample under various values of the magnetic field up to 14T in directions B∥ab-plane and B∥c-axis with a dc weak transport current density were investigated in order to determine the activation energy and then understand the vortex dynamic phenomena and therefore deduce the vortex phase diagram of this material. The apparent activation energy U0 (B) calculated using an Arrhenius relation. The measured results of the resistivity were then adjusted to the modified thermally assisted flux flow model in order to account for the temperature-field dependence of the activation energy U (T, B). The obtained values from the thermally assisted activation energy, exhibit a behavior similar to the one showed with the Arrhenius model, albeit larger than the apparent activation energy with ∼1.5 order on magnitude for both cases of the magnetic field directions. The vortex glass model was also used to obtain the vortex-glass transition temperature from the linear fitting of [d ln ρ/dT ] −1 plots. In the course of this work thanks to the resistivity measurements the upper critical magnetic field Hc2 (T), the irreversibility line Hirr (T) and the crossover field HCrossOver (T) were located. These three parameters allowed us to establish a phase diagram of the studied material where limits of each vortex phase are sketched in order to optimize its applicability as a practical high temperature superconductor used for diverse purposes.

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