Tribological Behavior of Amorphous Carbon Nitride Overcoats for Magnetic Thin-Film Rigid Disks

1996 ◽  
Vol 118 (3) ◽  
pp. 543-548 ◽  
Author(s):  
Eric C. Cutiongco ◽  
Dong Li ◽  
Yip-Wah Chung ◽  
C. Singh Bhatia

Amorphous carbon nitride coatings of thickness of 5 and 30 nm were deposited onto 65 and 95 mm magnetic thin-film rigid disks surfaces using single-cathode and dual-cathode magnetron sputtering systems containing nitrogen-argon plasmas. Under optimum deposition conditions, amorphous carbon nitride coatings can be synthesized on ultrasmooth thin-film disks with no significant pinholes at thickness down to 5 nm, with hardness 22–28 GPa (compared to 7–12 GPa for amorphous carbon), and r.m.s. roughness as low as 0.25 nm. These amorphous carbon nitride coatings were shown to have better contact-start-stop performance and three-to-four times better pin-on-disk contact durability compared with amorphous carbon overcoats under identical testing conditions. Amorphous carbon nitride appears to be a promising candidate overcoat material for replacing amorphous carbon in the next-generation magnetic thin-film rigid disk systems.

2004 ◽  
Vol 13 (10) ◽  
pp. 1882-1888 ◽  
Author(s):  
J. Neidhardt ◽  
L. Hultman ◽  
E. Broitman ◽  
T.W. Scharf ◽  
I.L. Singer

2019 ◽  
Vol 823 ◽  
pp. 9-14
Author(s):  
Yen Liang Su ◽  
Sun Hui Yao ◽  
Yu Chen Lai ◽  
Huang Ming Wu

This study aimed to understand the influence of small amount of Zr doping of amorphous carbonitride (a-CN) coatings on the structure, and mechanical and tribological behavior. The coatings were prepared using a four-target close-field unbalance magnetron sputtering system; two graphite, one Ti and one Zr targets were used. GDOS, SEM, XRD and XPS were used. A surface profilometer, a nanohardness tester, and a pin-on-disk wear tester were used. It was found the Zr doping resulting in the formation of ZrC and ZrN phases within the coating and the increase in the sp3 bonding fraction. The nanohardness was increased and the wear performance was largely improved.


1994 ◽  
Vol 68-69 ◽  
pp. 611-615 ◽  
Author(s):  
Dong Li ◽  
Eric Cutiongco ◽  
Yip-Wah Chung ◽  
Ming-Show Wong ◽  
William D. Sproul

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1127-1131 ◽  
Author(s):  
JIANG NING ◽  
S. XU ◽  
J. W. CHAI ◽  
L. K. CHEN ◽  
ALEX SEE ◽  
...  

The application of carbon nitride as a barrier against copper diffusion was investigated. Amorphous carbon nitride (a-CN) thin films were prepared on Si(100) substrates by rf magnetron sputtering of graphite target in N2 plasma. A thin Cu layer was then deposited in-situ atop of the a-CN film. Annealing process was carried out in nitrogen (N2) ambient at the temperature of 400°C and 600°C respectively. The as-deposited and annealed films were characterized by x-ray photoelectron spectroscopy (XPS). The measurements show that both sp2C-N and sp3-N bonds were formed in the as-deposited carbon nitride films. The compositional analyses indicate that the deposited a-CN thin film is able to act as an effective diffusion barrier against copper at annealing temperature up to 400°C.


2006 ◽  
Vol 15 (4-8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Yasuhiko Hayashi ◽  
N. Kamada ◽  
T. Soga ◽  
T. Jimbo

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