Characterization of amorphous carbon nitride by bottom-gated thin-film structure

2006 ◽  
Vol 15 (4-8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Yasuhiko Hayashi ◽  
N. Kamada ◽  
T. Soga ◽  
T. Jimbo
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Film Structure ◽  
Thin Film Structure ◽  
Amorphous Carbon Nitride

Characterization of hydrogenated amorphous carbon nitride particles and coatings obtained in a CH4/N2 radiofrequency discharge

2005 ◽  
Vol 482 (1-2) ◽  
pp. 226-231 ◽  
Author(s):  
Jérémy Pereira ◽  
Isabelle Géraud-Grenier ◽  
Véronique Massereau-Guilbaud ◽  
André Plain
Keyword(s):  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Hydrogenated Amorphous Carbon ◽  
Radiofrequency Discharge ◽  
Amorphous Carbon Nitride ◽  
Hydrogenated Amorphous

AMORPHOUS CARBON NITRIDE THIN FILM AS A BARRIER AGAINST COPPER DIFFUSION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1127-1131 ◽  
Author(s):  
JIANG NING ◽  
S. XU ◽  
J. W. CHAI ◽  
L. K. CHEN ◽  
ALEX SEE ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Effective Diffusion ◽  
Rf Magnetron Sputtering ◽  
Copper Diffusion ◽  
Amorphous Carbon Nitride ◽  
Film Annealing

The application of carbon nitride as a barrier against copper diffusion was investigated. Amorphous carbon nitride (a-CN) thin films were prepared on Si(100) substrates by rf magnetron sputtering of graphite target in N2 plasma. A thin Cu layer was then deposited in-situ atop of the a-CN film. Annealing process was carried out in nitrogen (N2) ambient at the temperature of 400°C and 600°C respectively. The as-deposited and annealed films were characterized by x-ray photoelectron spectroscopy (XPS). The measurements show that both sp2C-N and sp3-N bonds were formed in the as-deposited carbon nitride films. The compositional analyses indicate that the deposited a-CN thin film is able to act as an effective diffusion barrier against copper at annealing temperature up to 400°C.

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