Parametric Design and Reliability Analysis of Wire Interconnect Technology Wafer Level Packaging

2002 ◽  
Vol 124 (3) ◽  
pp. 234-239 ◽  
Author(s):  
Y. T. Lin ◽  
C. T. Peng ◽  
K. N. Chiang
Keyword(s):  
Reliability Analysis ◽  
Flip Chip ◽  
Material Selection ◽  
New Technology ◽  
Rapid Expansion ◽  
Wafer Level ◽  
Good Reliability ◽  
Wafer Level Packaging ◽  
Reliability Characteristics ◽  
Interconnect Technology

The demands for electronic packages with lower profile, lighter weight, and higher input/output (I/O) density have led to rapid expansion in flip chip, chip scale package (CSP) and wafer level packaging (WLP) technologies. The urgent demand high I/O density and good reliability characteristics have led to the evolution of ultra high-density non-solder interconnection, such as wire interconnect technology (WIT). New technology, which uses copper posts to replace the solder bumps as interconnections, has improved reliability. Moreover, this type of wafer level package produces higher I/O density, as well as ultra fine pitch. This research focuses on the reliability analysis, material selection and structural design of WIT packaging. This research employs finite element method (FEM) to analyze the physical behavior of packaging structures under thermal cycling conditions to compare the reliability characteristics of conventional wafer level and WIT packages. Parametric studies of specific parameters will be performed, and the plastic and temperature-dependent material properties will be applied to all models.

Parametric Design and Reliability Analysis of WIT Wafer Level Packaging

2000 ◽  
Author(s):  
Y. T. Lin ◽  
P. J. Tang ◽  
K. N. Chiang
Keyword(s):  
Reliability Analysis ◽  
Flip Chip ◽  
Parametric Design ◽  
Material Selection ◽  
New Technology ◽  
Rapid Expansion ◽  
Wafer Level ◽  
Good Reliability ◽  
Wafer Level Packaging ◽  
Wafer Level Package

Abstract The demands of electronic packages toward lower profile, lighter weight, and higher density of I/O lead to rapid expansion in the field of flip chip, chip scale package (CSP) and wafer level packaging (WLP) technologies. The urgent needs of high I/O density and good reliability characteristic lead to the evolution of the ultra high-density type of non-solder interconnection such as the wire interconnect technology (WIT). The new technology using copper posts to replace the solder bumps as interconnections shown a great improvement in the reliability life. Moreover, this type of wafer level package could achieve higher I/O density, as well as ultra fine pitch. This research will focus on the reliability analysis of the WIT package structures in material selection and structural design, etc. This research will use finite element method to analyze the physical behavior of packaging structures under thermal cycling condition to compare the reliability characteristics of conventional wafer level package and WIT packages. Parametric studies of specific parameters will be performed, and the plastic and temperature dependent material properties will be applied to all of the models.

Cost Comparison of Fan-out Wafer Level Packaging and Flip Chip Packaging

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-37 ◽  
Author(s):  
Amy Lujan
Keyword(s):  
Flip Chip ◽  
Cost Effective ◽  
Cost Comparison ◽  
Cost Modeling ◽  
Wafer Level ◽  
Design Features ◽  
Wafer Level Packaging ◽  
Flip Chip Packaging ◽  
The Right ◽  
The Cost

In recent years, there has been increased focus on fan-out wafer level packaging with the growing inclusion of a variety of fan-out wafer level packages in mobile products. While fan-out wafer level packaging may be the right solution for many designs, it is not always the lowest cost solution. The right packaging choice is the packaging technology that meets design requirements at the lowest cost. Flip chip packaging, a more mature technology, continues to be an alternative to fan-out wafer level packaging. It is important for many in the electronic packaging industry to be able to determine whether flip chip or fan-out wafer level packaging is the most cost-effective option. This paper will compare the cost of flip chip and fan-out wafer level packaging across a variety of designs. Additionally, the process flows for each technology will be introduced and the cost drivers highlighted. A variety of package sizes, die sizes, and design features will be covered by the cost comparison. Yield is a key component of cost and will also be considered in the analysis. Activity based cost modeling will be used for this analysis. With this type of cost modeling, a process flow is divided into a series of activities, and the total cost of each activity is accumulated. The cost of each activity is determined by analyzing the following attributes: time required, labor required, material required (consumable and permanent), capital required, and yield loss. The goal of this cost comparison is to determine which design features drive a design to be packaged more cost-effectively as a flip chip package, and which design features result in a lower cost fan-out wafer level package.

BCB-Based Dry Film low k Permanent Polymer with sub 4-μm Vias for Advanced WLP and FO-WLP Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000079-000085 ◽  
Author(s):  
Michael Toepper ◽  
Tanja Braun ◽  
Robert Gernhardt ◽  
Martin Wilke ◽  
Piotr Mackowiak ◽  
...  
Keyword(s):  
Laser Scanning ◽  
New Technology ◽  
Side Wall ◽  
Wafer Level ◽  
Major Barrier ◽  
Wafer Level Packaging ◽  
And Performance ◽  
Low K ◽  
Metallization Process ◽  
Dry Film

There is a strong demand to increase the routing density of the RDL to match the requirements for future microelectronic systems which are mainly miniaturization and performance. Photo-resists for structuring the metallization or acting as a mold for electroplating are common for very fine lines and spaces due to the developments in the front-end processing. For example chemical amplified Photo-resists are now moving in the back-end and wafer level packaging process. The results are mainly governed by the performance of the equipment i.e. the photo-tool. This is different for the permanent dielectric polymer material. The major difference in photo-resists and dielectric photo-polymer are the different functions of the material systems. Photo-resists are only temporary masks for subsequent process steps like etching and plating. This is different for the photo-polymers which are a permanent part of the future systems. In this paper a new technology is discussed which uses a laser scanning ablation process and BCB-Based Dry Film low k Permanent Polymer. Laser ablation of polymers is in principle not a new technology. Low speed and high cost was the major barrier. But the combination of a scanning technology together with quartz masks has opened this technology to overcome the limitation of the current photo-polymer process. The new technology is described in detail and the results of structuring BCB-Based Films down to less than 4 μm via diameter in a 15 μm thick film has been shown. The via side wall can be controlled by the fluence of the laser pulse. Test structures have been designed and fabricated to demonstrate the excellent electrical resistivity of the vias using a two-layer metallization process.

On the Origins, Status, and Future of Flip Chip & Wafer Level Packaging

2010 ◽  
Vol 2010 (1) ◽  
pp. 000325-000332 ◽  
Author(s):  
Alan Huffman ◽  
Philip Garrou
Keyword(s):  
Technological Change ◽  
Flip Chip ◽  
Emerging Technologies ◽  
Unit Area ◽  
Form Factors ◽  
Electrical Performance ◽  
Wafer Level ◽  
3D Integration ◽  
Wafer Level Packaging ◽  
Area Array

As IC scaling continues to shrink transistors, the increased number of circuits per chip requires more I/O per unit area (Rent's rule). High I/O count, the need for smaller form factors and the need for better electrical performance drove the technological change towards die being interconnected (assembled) by area array techniques. This review will examine this evolution from die wire bonded on lead frames to flip chip die in wafer level or area array packages and discuss emerging technologies such as copper pillar bumps, fan out packaging, integrated passives, and 3D integration..

New Stacked Die Interconnect Technology for High-Performance and Low-Cost FPGA

2015 ◽  
Vol 12 (3) ◽  
pp. 111-117
Author(s):  
Woon-Seong Kwon ◽  
Suresh Ramalingam ◽  
Xin Wu ◽  
Liam Madden ◽  
C. Y. Huang ◽  
...  
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Process Integration ◽  
Cost Effective ◽  
Design Rule ◽  
Innovative Technology ◽  
Wind Condition ◽  
Wafer Level ◽  
Effective Manner ◽  
Interconnect Technology

This article introduces the first comprehensive demonstration of new innovative technology comprising multiple key technologies for highly cost-effective and high-performance Xilinx field programmable gate array (FPGA), which is so-called stack silicon-less interconnect technology (SLIT) that provides the equivalent high-bandwidth connectivity and routing design-rule as stack silicon interconnect (SSI) technology at a cost-effective manner. We have successfully demonstrated the overall process integration and functions of our new SLIT-employed package using Virtex®-7 2000T FPGA product with chip-to-wafer stacking, wafer-level flux cleaning, microbump underfilling, mold encapsulation, and backside silicon removal. Of all technology elements, both full silicon removal process with faster etching and no dielectric layer damage and wafer warpage management after full silicon etching are most crucial elements to realize the SLIT technology. To manage the wafer warpage after full Si removal, a couple of knobs are identified and used such as top reinforcement layer, microbump underfill properties tuning, die thickness, die-to-die space, and total thickness adjustments. It is also discussed in the article how the wafer warpage behaves and how the wafer warpage is managed. New SLIT module shows excellent warpage characteristics of only −30 μm ∼ −40 μm at room temperature (25°C) for 25 mm × 31 mm in size and +20 μm ∼ +25 μm at reflow temperature (250°C). Thermal simulation results shows that thermal resistance of new SLIT package is almost comparable to that of standard 2000T flip-chip ball grid array (FC-BGA) package using through silicon via interposer with standard heat sink configuration and air wind condition. The reliability assessment is now under the study.

Semiconductor-on-Polymer Wafer Level Chip Scale Packaging

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 001232-001256
Author(s):  
Doug Hackler
Keyword(s):  
Flexible Electronics ◽  
Flip Chip ◽  
Electronic System ◽  
New Physics ◽  
Semiconductor Materials ◽  
Wafer Level ◽  
Test Procedures ◽  
Initial Development ◽  
Thin Semiconductor ◽  
Interconnect Technology

Cell phone boards are getting thinner. Labels and tags are getting smarter. Electronics is starting to bend. Consumers think thin is cool. Scaling thickness has and continues to be a key metric in packaging evolution. Chip Scale Packaging (CSP) defines the logical end of package scaling as package area and IC size converge. CSP, as well as the use of bare die, in Direct Chip Attach (DCA) integration pushes the limit of interconnect technology. CSP and implementation of direct interconnect attachment leads to the smallest packages possible. Technology and reliability advances in ultra-thin Semiconductor-on-Polymer (SoP) CSP and direct interconnect assembly is enabling flexible hybrid electronics and sensors today. SoP extends CSP package size reduction to less than 1.0X the die size. Semiconductor-on-Polymer (SoP) CSP results in ultra-thin semiconductor materials that are less than the thickness possible with bare die. SoP was initially introduced to the Flexible Electronics market; the technology has gained interest for conventional low profile, low-mid I/O, DCA type applications. Advanced SoP CSP is an ultra-thin packaging technology that is capable of complete die encapsulation using wafer level processing. Ultra-thin SoP CSP is new package technology. It is applied to fully characterized commercial devices, uses well know semiconductor materials and is generally “qualified by similarity” (QBS). Qualification for flexible applications supplement QBS with test procedures derived from established standards. The initial development of test methods and procedures was done with AFRL support in 2017. Initial reliability for the new flexibility tests will be presented. SoP CSP is undergoing further characterization for conventional applications. This includes testing that is typical of non-hermetic fully encapsulated parts. Flip-chip is the preferred method for assembly of SoP CSP. The ultra-thin package technology feature is fully utilized using Direct Interconnect (DI). Direct interconnect (DI) is defined as the die pad interconnect technology where the pad is connected directly to a board pad of equivalent size and spacing. Direct interconnect is common for low pad count devices such as RFID, NFC and other DCA applications. Direct interconnect is not typically considered for higher pin count devices…until now. This presentation shares the development of SoP CSP DI assembly that has progressed from 24 pin attachment to System-on-Chip assembly of DI pitch at <100um. The presentation also shows the technology roadmap for SoP CSP evolution. A case study of a SoP CSP application will be included with data from a fully assembled ultra-thin electronic system based on a SoP CSP SOC with total thickness less than 30um. The system includes on-board ultra-thin fully flexible sensors. A call to action will be made to embrace ultra-thin electronics. System Designers and IC Engineers will be encouraged to: BUILD! Create the vision for ultra-thin possibilities. Put electronics into places and things never before possible with, prototypes, testing, reporting, and introducing new thin concepts. Reliability Leaders will be encouraged to: TEST! Update test procedures and standards to include physical deformations and then report and challenge the industry to improve. Universities will be called to: CREATE! Generate new physics/models associated with deformations, develop interconnect innovations and advance new materials. In general, the presentation makes the case that hardware matters – Let's build some new technology.

M-Series with Adaptive Patterning for High-Yield Fan-Out SIP

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 000751-000773
Author(s):  
Craig Bishop ◽  
Suresh Jayaraman ◽  
Boyd Rogers ◽  
Chris Scanlan ◽  
Tim Olson
Keyword(s):  
New Technology ◽  
Minimum Size ◽  
High Yield ◽  
Wafer Level ◽  
Design Rules ◽  
Optical Scanner ◽  
Wafer Level Packaging ◽  
And Performance ◽  
The Cost ◽  
Semiconductor Chips

Fan-Out Wafer Level Packaging (FOWLP) holds immediate promise for packaging semiconductor chips with higher interconnect density than the incumbent Wafer Level Chip Scale Packaging (WLCSP). FOWLP enables size and performance capabilities similar to WLCSP, while extending capabilities to include multi-device system-in-packages. FOWLP can support applications that integrate multiple heterogeneously processed die at lower cost than 2.5D silicon interposer technologies. Current industry challenges with die position yield after die placement and molding result in low-density design rules and the high-cost of accurate die placement. Efficiently handling die shift is essential for making FOWLP cost-competitive with other technologies such as FCCSP and QFN. This presentation will provide an overview of Adaptive Patterning, a new technology for overcoming variability of die positions after placement and molding. In this process, an optical scanner is used to measure the true XY position and rotation of each die after panelization. The die measurements are then fed into a proprietary software engine that generates a unique pattern for each package. The resulting patterns are dispatched to a lithography system, which dynamically implements the unique patterns for all packages within a panel. For system-in-packages, this process offers a unique advantage over a fixed pattern: each die shift can be handled independently. With a fixed pattern, the design tolerances need to be large enough for all die to shift in opposing directions, otherwise yield loss in incurred. With Adaptive Patterning, vias and RDL features remain at minimum size and are matched to the measured die shift. The die-to-die interconnects are dynamically generated and account for the unique position of each die. Thus, Adaptive Patterning retains the same high-density design rules regardless of how many die are in a package. Adaptive Patterning provides the capability to use high-throughput die placement to drive down cost, while enabling higher-density system-in-package interconnect. With this technology the industry can finally realize the cost, flexibility, and form factor benefits of FOWLP.

Design and Fabrication of WLP Compatible Miniaturized Pressure Sensor System with Through Silicon Via (TSV) Interconnects

2011 ◽  
Vol 2011 (1) ◽  
pp. 000033-000043 ◽  
Author(s):  
Tao WANG ◽  
Jian CAI ◽  
Qian WANG ◽  
Hao ZHANG ◽  
Zheyao WANG
Keyword(s):  
Pressure Sensor ◽  
Flip Chip ◽  
Electrical Signal ◽  
Sensor System ◽  
Wafer Level ◽  
Through Silicon Via ◽  
Bonding Structure ◽  
Wafer Level Packaging ◽  
Piezoresistive Pressure Sensor ◽  
Processing Circuit

In this paper, a Wafer Level Packaging (WLP) compatible pressure sensor system enabled with Through Silicon Via (TSV) and Au-Sn inter-chip micro-bump bonding is designed and fabricated in lab, in which TSV transmits electrical signal from piezoresistive circuit to processing circuit vertically. The pressure sensor system includes TSV integrated piezoresistive pressure sensor chip and Read-Out Integrated Chip (ROIC) in which TSV also incorporated. Two CMOS compatible fabrication process flows for pressure sensor system are demonstrated. And, flip chip bonding structure of TSV integrated pressure sensor with a ROIC are realized using one of these two process flows. Inter-chip interconnects enabled with TSV and micro-bump bonding is obtained.

Wafer level packaging of a tape flip-chip chip scale packages

2001 ◽  
Vol 41 (5) ◽  
pp. 705-713 ◽  
Author(s):  
Greg Hotchkiss ◽  
Gonzalo Amador ◽  
Darvin Edwards ◽  
Paul Hundt ◽  
Les Stark ◽  
...  
Keyword(s):  
Flip Chip ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Chip Chip
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