Epoxy Nanocomposite Capacitors for Application as MCM-L Compatible Integral Passives

2001 ◽  
Vol 124 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Swapan K. Bhattacharya ◽  
Rao R. Tummala
Keyword(s):  
Low Cost ◽  
Ceramic Composites ◽  
Material System ◽  
Large Area ◽  
Passive Components ◽  
Capacitance Density ◽  
Glass Substrates ◽  
Ceramic Thin Films ◽  
Low Temperature Processing ◽  
Novel Material

Polymer/ceramic composite emerges as a novel material system for application as integral capacitors for the next generation of microelectronic industry where the discrete passive components such as capacitors, resistors, and inductors are likely to be replaced by the embedded components. In this study, epoxy based nanocomposites are selected due to their low-cost and low temperature processing advantages in comparison to the traditional polymers used in the microelectronic industry today. Other potential advantages of epoxy materials could be their aqueous based fabrication process and availability in the form of dry films for direct lamination onto substrates. This paper reports dielectric properties of epoxy nanocomposites made from three commercially available resin composites (i) a solvent based photodefinable epoxy, (ii) an aqueous based photodefinable epoxy, and (iii) a non-photodefinable epoxy. Possible avenues for achieving higher capacitance density in polymer/ceramic composites for future needs have been discussed. Deposition of polymer/ceramic thin films on a 300 mm×300 mm PWB and glass substrates has been demonstrated using a state-of-the-art meniscus coater. The end goal of this study is to develop a defect-free manufacturable process for depositing and patterning particulate epoxy composite capacitors on large area PWB substrates. It is believed that the large area process will reduce the overall manufacturing costs and increase process yield, thus facilitate the economic viability of the integral passive technology.

Preparation and Characterization of Cu2Zn(GexSn1-x)Se4 Thin-films from Sputtered Elemental Precursors

2014 ◽  
Vol 1670 ◽  
Author(s):  
Antony Jan ◽  
Yesheng Yee ◽  
Bruce M. Clemens
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Solar Spectrum ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Material System ◽  
Direct Band Gap ◽  
Glass Substrates ◽  
Before And After ◽  
Direct Band

ABSTRACTThin-film absorber layers for photovoltaics have attracted much attention for their potential for low cost per unit power generation, due both to reduced material consumption and to higher tolerance for defects such as grain boundaries. Cu2ZnGeSe4 (CZGSe) comprises one such material system which has a near-optimal direct band gap of 1.6 eV for absorption of the solar spectrum, and is made primarily from earth-abundant elements.CZGSe metallic precursor films were sputtered from Cu, Zn, and Ge onto Mo-coated soda lime glass substrates. These were then selenized in a two-zone close-space sublimation furnace using elemental Se as the source, with temperatures in the range of 400 to 500 C, and at a variety of background pressures. Films approximately 1-1.5 µm thick were obtained with the expected stannite crystal structure.Next, Cu2ZnSnSe4 (CZTSe), which has a direct band gap of 1.0 eV, was prepared in a similar manner and combined with CZGSe as either compositionally homogeneous or layered absorbers. The compositional uniformity of selenide absorbers made by selenizing compositionally homogeneous Cu-Zn-Ge-Sn precursor layers was determined and the band gap as a function of composition was investigated in order to demonstrate that the band gap is tuneable for a range of compositions. For layered Cu-Zn-Ge/Cu-Zn-Sn precursor films, the composition profile was measured before and after selenization to assess the stability of the layered structure, and its applicability for forming a band-gap-graded device for improved current collection.

scholarly journals Economic pulse electrodeposition for flexible CuInSe2 solar cells

2020 ◽  
Vol 9 (3) ◽  
Author(s):  
Sreekanth Mandati ◽  
Prashant Misra ◽  
Divya Boosagulla ◽  
Tata Naransinga Rao ◽  
Bulusu V. Sarada
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Electrode System ◽  
Pulse Electrodeposition ◽  
Small Scale ◽  
Complexing Agents ◽  
Large Area ◽  
Advanced Technique ◽  
Glass Substrates ◽  
Energy Applications

Abstract Electrodeposition is one of the leading non-vacuum techniques for the fabrication of CuInSe2 (CIS)-based solar cells. In the present work, pulse electrodeposition, an advanced technique, is utilized effectively for CIS absorber preparation devoid of any additives/complexing agents. An economic pulse electrodeposition is employed for the deposition of Cu/In stack followed by selenization to fabricate CIS absorbers on flexible and glass substrates. The approach uses a two-electrode system suitable for large area deposition and utilizes the fundamentals of pulse electrodeposition with appropriate optimization of parameters to obtain smooth Cu/In precursors. The selenized CIS absorbers are of 1 µm thick while possessing copper-poor composition (Cu/In ≈ 0.9) and tetragonal chalcopyrite phase. The fabricated devices have exhibited a power conversion efficiency of 5.2%. The technique can be further improved to obtain low-cost CIS solar cells which are suitable for various small-scale energy applications.

Application of Thin-Film Micromachining for Large-Area Substrates

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Boucinha ◽  
V. Chu ◽  
V. Soares ◽  
J. P. Condee
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Sacrificial Layer ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Aluminum Films ◽  
Glass Substrates ◽  
Low Temperature Processing ◽  
Device Applications ◽  
Silicon Silicon

AbstractSurface micromachining is used with amorphous silicon, microcrystalline silicon, silicon nitride and aluminum films as structural materials to form bridge and cantilever structures. Low temperature processing (between 110 and 250 °C) allowed fabrication of structures and devices on glass substrates. Two processes involving different materials as the sacrificial layer are presented: silicon nitride and photoresist. The mechanical integrity of the fabricated structures is discussed. As examples of possible device applications of this technology, air-gap thin film transistors and the electrostatic actuation of bridges and cantilevers are presented.

The Fabrication of Titanium Dioxide (TiO2) Thin Film via Deposited Spray Pyrolysis Using for Antibacterial Applications

2015 ◽  
Vol 804 ◽  
pp. 183-186
Author(s):  
Prapon Lertloypanyachai ◽  
Eakgapon Kaewnuam ◽  
Krittiya Sreebunpeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Spray Pyrolysis ◽  
Uv Light ◽  
Spray Pyrolysis Technique ◽  
Low Cost ◽  
Large Area ◽  
Bacteria Growth ◽  
Glass Substrates

Titanium dioxide (TiO2) is coated onto the materials (e.g.glass ceramic) to inhibit the bacteria growth. TiO2has become a popular photocatalyst for both air and water purification. It has also shown to be very active for bacterial destruction even under UV light. The photocatalytic of TiO2involves the light-induced catalysis of reducing and oxidizing reactions on the surface of materials. The spray pyrolysis technique for material synthesis in thin-film configuration is an interesting option due to the use of inexpensive precursor materials and low-cost equipment suitable for large-area coatings. In this research, TiO2thin films were deposited onto glass substrates using spray pyrolysis technique. Escherichia coli (E.coli) was used as testing bacteria. TiO2thin films showed some antibacterial effect in the halo test.

scholarly journals Single-Fiber Bidirectional Optical Data Links with Monolithic Transceiver Chips

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Alexander Kern ◽  
Sujoy Paul ◽  
Dietmar Wahl ◽  
Ahmed Al-Samaneh ◽  
Rainer Michalzik
Keyword(s):  
High Speed ◽  
Low Cost ◽  
Full Duplex ◽  
Optical Data ◽  
Cavity Surface ◽  
Material System ◽  
Large Area ◽  
Core Diameter ◽  
Data Rates ◽  
Electrooptical Properties

We report the monolithic integration, fabrication, and electrooptical properties of AlGaAs-GaAs-based transceiver (TRx) chips for 850 nm wavelength optical links with data rates of multiple Gbit/s. Using a single butt-coupled multimode fiber (MMF), low-cost bidirectional communication in half- and even full-duplex mode is demonstrated. Two design concepts are presented, based on a vertical-cavity surface-emitting laser (VCSEL) and a monolithically integrated p-doped-intrinsic-n-doped (PIN) or metal-semiconductor-metal (MSM) photodetector. Whereas the VCSEL-PIN photodiode (PD) chips are used for high-speed bidirectional data transmission over 62.5 and 50 μm core diameter MMFs, MSM TRx chips are employed for 100 or 200 μm large-area fibers. Such a monolithic transceiver design based on a well-established material system and avoiding the use of external fiber coupling optics is well suited for inexpensive and compact optical interconnects over distances of a few hundred meters. Standard MMF networks can thus be upgraded using high-speed VCSEL-PIN transceiver chips which are capable to handle data rates of up to 10 Gbit/s.

Fabrication of a-Si:H Tfts at 120°C on Flexible Polyimide Substrates

1999 ◽  
Vol 558 ◽  
Author(s):  
Andrei Sazonov ◽  
Arokia Nathan ◽  
R.V.R. Murthy ◽  
S.G. Chamberlain
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Performance Comparison ◽  
Hydrogen Gas ◽  
Large Area ◽  
Plastic Substrates ◽  
Glass Substrates ◽  
Contact Metallization

ABSTRACTThe fabrication of large-area thin-film transistor (TFT) arrays on thin flexible plastic substrates requires deposition of thin film layers at relatively low temperatures since the upper working temperature of low-cost plastic films should not exceed ∼200°C. In this paper, we report a fabrication process of a-Si:H TFTs at 120°C on flexible polyimide substrates for large-area imaging applications.Kapton HN (DuPont) films 50 and 125 μm thick and 3 inches in diameter, were used as substrates. Both sides of the polyimide substrate were first covered with 0.5 μm thick a-SiNx. The TFT structure includes: 120 nm thick room-temperature sputtered Al gate, 250 nm thick PECVD deposited a-SiNx for the gate dielectric, 50 nm thick a-Si:H deposited by PECVD from silane-hydrogen gas mixture, 50 nm thick n+ a-Si:H source- and drain contacts, and roomtemperature sputtered Al top contact metallization. We used dry etching for all layers except for the gate and top metal, which were patterned using wet etchants. For purpose of TFT performance comparison, Coming 7059 glass substrates were used.The performance of the fabricated TFT and its improvement with use of optimized a-Si:H and a-SiNx quality will be presented along with a discussion of the intrinsic mechanical stress in the thin film layers will also be discussed.

Fabrication and Application of Nanostructures Using Gas-Assisted Hot Embossing and Self-Assembled Nanospheres

2015 ◽  
Vol 659 ◽  
pp. 399-403 ◽  
Author(s):  
Rong Hong Hong ◽  
Cheng Cih ◽  
To Chung Shu ◽  
Sen Yeu Yang
Keyword(s):  
Near Infrared ◽  
Low Cost ◽  
Hot Embossing ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Glass Substrates ◽  
Plasma Sputtering ◽  
Nanostructure Arrays ◽  
Self Assembled ◽  
Better Than

We develop a simple and competitive fabrication of antireflective (AR) films with high-ordered nanostructure arrays on polycarbonate (PC) substrate by using gas-assisted hot embossing and a self-assembled technique. In this method, a self-assembled monolayer of polystyrene (PS) nanospheres is well-patterned on glass substrates as the first template. Subsequently, we use the plasma sputtering to deposit a conductive layer onto the surface of nanosphere (NS) patterned substrates, and then, electroforming is applied to fabricate a nickel mold with an inverse shape of nanospheres. In the last step, a unique glass transition is utilized to duplicate nanostructures on PC films via gas-assisted hot embossing. Not only in visible light but in near infrared, the optical properties of this AR film are similar or better than for other methods. This fabrication process also has great potential in industry, with its simplicity, large-area but low-cost.

Polymer-derived SiCN composites with magnetic properties

2003 ◽  
Vol 18 (11) ◽  
pp. 2549-2551 ◽  
Author(s):  
Atanu Saha ◽  
Sandeep R. Shah ◽  
Rishi Raj ◽  
Stephen E. Russek
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Low Cost ◽  
Ceramic Composites ◽  
Processing Method ◽  
Silicon Carbonitride ◽  
Imperfect Interfaces ◽  
Elastic Resistance ◽  
Low Temperature Processing ◽  
Multifunctional Properties

Composites consisting of particles of α-iron dispersed in silicon carbonitride (SiCN) were fabricated by a polymer route. The composites had iron inclusions with the same magnetization as bulk iron, but they resisted oxidation up to 500°C and had a hardness of 5-7 GPa. The composites behaved as ferromagnets, albeit with a low susceptibility attributed to the pinning of the domains by imperfect interfaces and to the elastic resistance from the SiCN matrix. This low-cost, low-temperature processing method can be used to make different kinds of ceramic composites with multifunctional properties.

Spray-Deposited Metal Oxide Films with Various Properties for Micro- and Optoelectronic Applications: Growth and Characterization

1997 ◽  
Vol 471 ◽  
Author(s):  
A. Malik ◽  
A. Séco ◽  
R. Nunes ◽  
M. Vieira ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Cost ◽  
Oxide Films ◽  
Large Area ◽  
Metal Oxide Films ◽  
High Productivity ◽  
Degenerate Semiconductors ◽  
Glass Substrates ◽  
Deposited Metal ◽  
Device Applications

ABSTRACTThis work reports the structure and electro-optical characteristics of different metal oxide films obtained by spray pyrolysis on heated glass substrates, aiming their application in optoelectronic devices. The results show that this technique leads to thin films with properties ranging from dielectric to degenerate semiconductors, offering the following advantages: simplicity, low cost, high productivity and the possibility of covering large areas, highly important for large area device applications.

scholarly journals Long- and Short-Range Ordered Gold Nanoholes as Large-Area Optical Transducers in Sensing Applications

Chemosensors ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 13 ◽  
Author(s):  
Maura Cesaria ◽  
Adriano Colombelli ◽  
Daniela Lospinoso ◽  
Antonietta Taurino ◽  
Enrico Melissano ◽  
...  
Keyword(s):  
Self Assembly ◽  
Short Range ◽  
Low Cost ◽  
Hexagonal Lattice ◽  
Solid Substrate ◽  
Attractive Alternative ◽  
Large Area ◽  
Glass Substrates ◽  
Self Assembling ◽  
Sensing Applications

Unconventional lithography (such as nanosphere lithography (NSL) and colloidal lithography (CL)) is an attractive alternative to sequential and very expensive conventional lithography for the low-cost fabrication of large-area nano-optical devices. Among these, nanohole (NH) arrays are widely studied in nanoplasmonics as transducers for sensing applications. In this work, both NSL and CL are implemented to fabricate two-dimensional distributions of gold NHs. In the case of NSL, highly ordered arrays of gold NHs distributed in a hexagonal lattice onto glass substrates were fabricated by a simple and reproducible approach based on the self-assembling of close-packed 500 nm diameter polystyrene particles at an air/water interface. After the transfer onto a solid substrate, the colloidal masks were processed to reduce the colloidal size in a controllable way. In parallel, CL was implemented with short-range ordered gold NH arrays onto glass substrates that were fabricated by electrostatically-driven self-assembly of negatively charged colloids onto a polydiallyldimethylammonium (PDDA) monolayer. These distributions were optimized as a function of the colloidal adsorption time. For both approaches, controllable and reproducible procedures are presented and discussed. The optical responses of the NH structures are related to the short-range ordering level, and their good performances as refractive index transducers are demonstrated.

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