Spray-Deposited Metal Oxide Films with Various Properties for Micro- and Optoelectronic Applications: Growth and Characterization

1997 ◽  
Vol 471 ◽  
Author(s):  
A. Malik ◽  
A. Séco ◽  
R. Nunes ◽  
M. Vieira ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Cost ◽  
Oxide Films ◽  
Large Area ◽  
Metal Oxide Films ◽  
High Productivity ◽  
Degenerate Semiconductors ◽  
Glass Substrates ◽  
Deposited Metal ◽  
Device Applications

ABSTRACTThis work reports the structure and electro-optical characteristics of different metal oxide films obtained by spray pyrolysis on heated glass substrates, aiming their application in optoelectronic devices. The results show that this technique leads to thin films with properties ranging from dielectric to degenerate semiconductors, offering the following advantages: simplicity, low cost, high productivity and the possibility of covering large areas, highly important for large area device applications.

Electrophysical Properties of Metal Oxide Films Fabricated by Using Spray Pyrolysis

2020 ◽  
Vol 28 ◽  
pp. 71-77
Author(s):  
Vladimir Evgenevich Polkovnikov ◽  
Stanislav Ivanovich Rembeza ◽  
Tatiana Gennadevna Menshikova ◽  
Dmitriy Sergeevich Permyakov ◽  
Maksim Aleksandrovich Belykh
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Hall Effect ◽  
Spray Pyrolysis ◽  
Surface Resistance ◽  
Oxide Films ◽  
Electrophysical Properties ◽  
Electrical Parameters ◽  
Metal Oxide Films ◽  
Glass Substrates

This document describes the technology of manufacturing metal oxide films ZnO, SnO2, Zn2SnO4 from aqueous solutions of the corresponding salts by spray pyrolysis. The modes and conditions of deposition of metal oxide films on hot (420 °C) glass substrates are given. The electrical parameters of the films were measured by the van der Pau method and by the Hall effect, the surface resistance was in the range from 140 to 85⋅103 Ohm/. The band gap was determined by light absorption spectra and was within 3.2...3.5 eV. For all metal oxides, the n-type conductivity was determined using the thermosonde and the Hall effect.

Structure and crystallization of amorphous metal oxide films

1978 ◽  
Vol 36 (1) ◽  
pp. 648-649
Author(s):  
M. Shiojiri ◽  
T. Miyano ◽  
C. Kaito
Keyword(s):  
Electron Microscope ◽  
Metal Oxide ◽  
Oxide Films ◽  
Objective Lens ◽  
Metal Oxide Films ◽  
Electron Microscopic ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Amorphous Metal Oxide

High resolution electron microscopic observations have been made on amorphous and crystalline metal oxide films. The specimen films were prepared by vacuum-evaporation of metal oxide powder from alumina coated tungsten basket onto clean glass substrates at room temperature. The films were deposited to a thickness of 100 Å, monitored with quartz crystal oscillating microbalance. The films were wet-stripped from the substrates and then mounted on gold holey films which were supported by standard gold electron microscope grids. Transmission electron micrographs were taken with JEM 100-C electron microscope under axial illumination. The microscope was equipped with an objective lens with Cs=1.8 mm and operated at 100 kV.Figure 1 shows an electron micrograph and an electron diffraction pattern of as-deposited WO3 film. The thickness of the film is assumed to be less than 50 Å, since the 100 Å thick film was floated on the distilled water for 20 minutes for thinning by dissolution.

Photoluminescence of RE-doped thin metal oxide films

2005 ◽  
Vol 2 (1) ◽  
pp. 326-329 ◽  
Author(s):  
S. Lange ◽  
I. Sildos ◽  
V. Kiisk ◽  
J. Aarik ◽  
M. Kirm
Keyword(s):  
Metal Oxide ◽  
Oxide Films ◽  
Thin Metal ◽  
Metal Oxide Films
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