Preparation and Characterization of Cu2Zn(GexSn1-x)Se4 Thin-films from Sputtered Elemental Precursors

2014 ◽  
Vol 1670 ◽  
Author(s):  
Antony Jan ◽  
Yesheng Yee ◽  
Bruce M. Clemens
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Solar Spectrum ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Material System ◽  
Direct Band Gap ◽  
Glass Substrates ◽  
Before And After ◽  
Direct Band

ABSTRACTThin-film absorber layers for photovoltaics have attracted much attention for their potential for low cost per unit power generation, due both to reduced material consumption and to higher tolerance for defects such as grain boundaries. Cu2ZnGeSe4 (CZGSe) comprises one such material system which has a near-optimal direct band gap of 1.6 eV for absorption of the solar spectrum, and is made primarily from earth-abundant elements.CZGSe metallic precursor films were sputtered from Cu, Zn, and Ge onto Mo-coated soda lime glass substrates. These were then selenized in a two-zone close-space sublimation furnace using elemental Se as the source, with temperatures in the range of 400 to 500 C, and at a variety of background pressures. Films approximately 1-1.5 µm thick were obtained with the expected stannite crystal structure.Next, Cu2ZnSnSe4 (CZTSe), which has a direct band gap of 1.0 eV, was prepared in a similar manner and combined with CZGSe as either compositionally homogeneous or layered absorbers. The compositional uniformity of selenide absorbers made by selenizing compositionally homogeneous Cu-Zn-Ge-Sn precursor layers was determined and the band gap as a function of composition was investigated in order to demonstrate that the band gap is tuneable for a range of compositions. For layered Cu-Zn-Ge/Cu-Zn-Sn precursor films, the composition profile was measured before and after selenization to assess the stability of the layered structure, and its applicability for forming a band-gap-graded device for improved current collection.

Growth of Cu-Rich/Poor CuInS2 thin films by the sequential modulated flux deposition technique

2009 ◽  
Vol 1165 ◽  
Author(s):  
Alberto Bollero ◽  
Maarja Grossberg ◽  
Taavi Raadik ◽  
Juan Francisco Trigo ◽  
José Herrero ◽  
...  
Keyword(s):  
Soda Lime ◽  
Band Gap Energy ◽  
Soda Lime Glass ◽  
Proper Selection ◽  
Glass Substrates ◽  
Sequential Modulation ◽  
Deposition Parameters ◽  
Cuins2 Thin Films ◽  
Direct Band ◽  
Selection Of

AbstractCuInS2 has emerged during recent years as a good candidate to substitute CuInSe2 as polycrystalline absorber in thin film solar cells, mainly due to its direct band gap energy of 1.5 eV. In this study, absorber layers of both Cu-rich and Cu-poor types have been grown on soda-lime glass substrates by proper selection of the deposition parameters. The morphology and the optical properties of the resulting CuInS2 films were studied in dependence of the deposition order of the elemental constituents: alternate evaporation of the precursors, simultaneous deposition of the three constituents and sequential modulation of the evaporation fluxes.

scholarly journals Multi crystalline silicon thin films grown directly on low cost soda-lime glass substrates

2019 ◽  
Vol 203 ◽  
pp. 110168 ◽  
Author(s):  
Sven Kühnapfel ◽  
Stefanie Severin ◽  
Norbert Kersten ◽  
Paul Harten ◽  
Bert Stegemann ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Glass Substrates ◽  
Silicon Thin Films

Synthesis of Colloidal InP/ZnS Nanocrystals for a Photosensitizer

2012 ◽  
Vol 1409 ◽  
Author(s):  
Seungyong Lee ◽  
Vanga R. Reddy ◽  
Jiang Wu ◽  
Rick Eyi ◽  
Omar Manasreh
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Chemical Stability ◽  
Semiconductor Nanocrystals ◽  
Solar Spectrum ◽  
Core Shell ◽  
Direct Band Gap ◽  
Direct Band ◽  
Zns Nanocrystals ◽  
Spectrum Region

ABSTRACTIts intrinsic nontoxicity makes the direct band gap InP/ZnS core/shell be one of the most promising semiconductor nanocrystals for optoelectric applications, with the advantage of tuning the optical absorption range in the desired solar spectrum region. Highly luminescent and monodisperse InP/ZnS nanocrystals were synthesized in a non-coordinating solvent under a thorough degassing process. By varying synthesis scheme, different size InP/ZnS nanocrystals were grown. For the purpose of ensuring air stability, ZnS shell was grown. This ZnS shell improves the chemical stability in terms of oxidation prevention. Measurements of absorption and emission were performed on different InP/ZnS nanocrystals with different sizes. As expected, the measurements show a red-shift as the size of the InP/ZnS nanocrystals increased.

Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

2006 ◽  
Vol 88 (18) ◽  
pp. 182108 ◽  
Author(s):  
B. Kunert ◽  
K. Volz ◽  
J. Koch ◽  
W. Stolz
Keyword(s):  
Band Gap ◽  
Material System ◽  
Direct Band Gap ◽  
Direct Band

Effect of Heat Treatment on the Crystal Structure and Optical Band Gap of Cigs Thin Films

2011 ◽  
Vol 347-353 ◽  
pp. 94-97
Author(s):  
Lei Han ◽  
Tie Zhu Ding ◽  
Yan Lai Wang ◽  
Luo Meng Chao ◽  
Tao Shang
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Heat Treatment ◽  
Band Gap ◽  
Soda Lime ◽  
Absorption Efficiency ◽  
Treatment Temperature ◽  
Soda Lime Glass ◽  
Glass Substrates ◽  
Crystallization Conditions

The CIGS thin films were prepared on ordinary soda lime glass substrates by pulsed laser deposition (PLD). The XRD and UV-visible spectrophotometer has been determined. The influence of different heat treatment temperature on crystal structure and optical properties has been studied. The results shows that heat treatment at 450°C, the films along the (112) plane preferential grow. The thin film’s structure is integrity, the film is in best crystallization conditions, band gap is 1.35eV and the film has a high visible light absorption efficiency.

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sem Images ◽  
Fluorescence Emission Spectra ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

Preparation of CuInGaSe2 Absorber Layer by Nanoparticles-Based Spray Deposition

2004 ◽  
Vol 836 ◽  
Author(s):  
Ki-Hyun Kim ◽  
Young-Gab Chun ◽  
Byung-Ok Park ◽  
Kyung-Hoon Yoon
Keyword(s):  
Spray Deposition ◽  
Soda Lime ◽  
Inert Atmosphere ◽  
Absorber Layer ◽  
Step Motor ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates ◽  
Spray System ◽  
Cigs Nanoparticles

ABSTRACTCIGS nanoparticles for the CIGS absorber layer have been synthesized by low temperature colloidal routes. The CIGS absorber layers for solar cells have been prepared by spray deposition of CIGS nanoparticle precursors (∼20 nm) in glove box under inert atmosphere. An automatic air atomizing nozzle spray system with computer controlled X-Y step motor system was used to spray. The nanoparticle precursor CIGS film was deposited onto molybdenum-coated soda-lime glass substrates (2.5 cm × 5.0 cm) heated to 160°C. The film thickness in the range of 2 μm ± 0.3 μm was attained by spraying of 3 mM colloidal over an area of 12.5 cm2. The coalescence between particles was observed in the CIGS absorber layer under post-treatment of over 550 °C. This is related to the reactive sintering among the nanoparticles to reduce surface energy of the particles. The CuxSe thin film, formed on Mo film by evaporation, improved adhesion between CIGS and Mo layers and enhanced the coalescence of the particles in the CIGS layer. These are closely related to the fluxing of Cu2Se phase which has relatively low melting temperature. The CdS buffer layer was deposited on the CIGS/Mo/soda-lime glass substrate by chemical bath deposition. The CIGS nanoparticles-based absorber layers were characterized by using energy dispersive spectroscopy (EDS), x-ray diffraction (XRD) and high-resolution scanning electron microscopy (HRSEM).

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