Application of Thin-Film Micromachining for Large-Area Substrates

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Boucinha ◽  
V. Chu ◽  
V. Soares ◽  
J. P. Condee
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Sacrificial Layer ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Aluminum Films ◽  
Glass Substrates ◽  
Low Temperature Processing ◽  
Device Applications ◽  
Silicon Silicon

AbstractSurface micromachining is used with amorphous silicon, microcrystalline silicon, silicon nitride and aluminum films as structural materials to form bridge and cantilever structures. Low temperature processing (between 110 and 250 °C) allowed fabrication of structures and devices on glass substrates. Two processes involving different materials as the sacrificial layer are presented: silicon nitride and photoresist. The mechanical integrity of the fabricated structures is discussed. As examples of possible device applications of this technology, air-gap thin film transistors and the electrostatic actuation of bridges and cantilevers are presented.

Application of Thin-Film Micromachining on Glass

1998 ◽  
Vol 507 ◽  
Author(s):  
M. Boucinha ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Thin Film ◽  
Etch Rate ◽  
Sacrificial Layer ◽  
Three Dimensional ◽  
Electrical Characteristics ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Glass Substrates ◽  
Bridge Structures ◽  
Hydrogenated Amorphous

ABSTRACTThree dimensional microstructures have been made on glass substrates using surface micromachining techniques. Bridge structures were fabricated using both hydrogenated amorphous silicon and microcrystalline silicon. A low density silicon nitride with an etch rate of 100 Å/s in buffered HF was used as the sacrificial layer. As an example of how micromachining can be applied to large area electronics, thin film transistors (TFT) with the dielectric replaced by an air-gap were fabricated. The electrical characteristics of the first working devices are presented.

CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 667-670 ◽  
Author(s):  
Y. RODRÍGUEZ-LAZCANO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Band Gap ◽  
Deposition Method ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Ternary Compounds ◽  
Glass Substrates ◽  
Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

Charge trapping effects in amorphous silicon/silicon nitride thin film transistors

1987 ◽  
Vol 97-98 ◽  
pp. 903-906 ◽  
Author(s):  
A.R. Hepburn ◽  
C. Main ◽  
J.M. Marshall ◽  
C. van Berkel ◽  
M.J. Powell
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Silicon Silicon ◽  
Trapping Effects

Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells

1997 ◽  
Vol 485 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Plasma Deposition ◽  
Microcrystalline Silicon ◽  
Interface Control ◽  
Electro Optic ◽  
Low Temperature Processing ◽  
Si Films

AbstractPlasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.

Amorphous silicon‐silicon nitride thin‐film transistors

1981 ◽  
Vol 38 (10) ◽  
pp. 794-796 ◽  
Author(s):  
M. J. Powell ◽  
B. C. Easton ◽  
O. F. Hill
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Silicon

Epoxy Nanocomposite Capacitors for Application as MCM-L Compatible Integral Passives

2001 ◽  
Vol 124 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Swapan K. Bhattacharya ◽  
Rao R. Tummala
Keyword(s):  
Low Cost ◽  
Ceramic Composites ◽  
Material System ◽  
Large Area ◽  
Passive Components ◽  
Capacitance Density ◽  
Glass Substrates ◽  
Ceramic Thin Films ◽  
Low Temperature Processing ◽  
Novel Material

Polymer/ceramic composite emerges as a novel material system for application as integral capacitors for the next generation of microelectronic industry where the discrete passive components such as capacitors, resistors, and inductors are likely to be replaced by the embedded components. In this study, epoxy based nanocomposites are selected due to their low-cost and low temperature processing advantages in comparison to the traditional polymers used in the microelectronic industry today. Other potential advantages of epoxy materials could be their aqueous based fabrication process and availability in the form of dry films for direct lamination onto substrates. This paper reports dielectric properties of epoxy nanocomposites made from three commercially available resin composites (i) a solvent based photodefinable epoxy, (ii) an aqueous based photodefinable epoxy, and (iii) a non-photodefinable epoxy. Possible avenues for achieving higher capacitance density in polymer/ceramic composites for future needs have been discussed. Deposition of polymer/ceramic thin films on a 300 mm×300 mm PWB and glass substrates has been demonstrated using a state-of-the-art meniscus coater. The end goal of this study is to develop a defect-free manufacturable process for depositing and patterning particulate epoxy composite capacitors on large area PWB substrates. It is believed that the large area process will reduce the overall manufacturing costs and increase process yield, thus facilitate the economic viability of the integral passive technology.

Modulated surface-textured substrates with high haze for thin-film silicon solar cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
O. Isabella ◽  
P. Liu ◽  
B. Bolman ◽  
J. Krč ◽  
M. Zeman
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Sacrificial Layer ◽  
Flat Glass ◽  
Silicon Solar Cells ◽  
Glass Substrates ◽  
Thin Film Silicon ◽  
Surface Modulation

ABSTRACTModulated surface-textured substrates for thin-film silicon solar cells exhibiting high haze in a broad range of wavelengths were fabricated. Glass substrates coated with different thicknesses of a sacrificial layer were wet-etched allowing the manipulation of the surface morphology with surface roughness ranging from 200 nm up to 1000 nm. Subsequently, zinc-oxide layers were sputtered and then wet-etched constituting the final modulated textures. The morphological analysis of the substrates demonstrated the surface modulation, and the optical analysis revealed broad angle intensity distributions and high hazes. A small anti-reflective effect with respect to untreated glass was found for etched glass samples. The performance of solar cells on high-haze substrates was evaluated. The solar cells outperformed the reference cell fabricated on a randomly-textured zinc-oxide-coated flat glass. The trend in the efficiency resembled the increased surface roughness and the anti-reflective effect was confirmed also in solar cell devices.

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