ONO and Tunnel Oxide Characterization and Optimization for High Speed EEPROM Device

2012 ◽  
Author(s):  
Uda Hashim ◽  
Ramzan Mat Ayub
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Speed ◽  
Oxide Thickness ◽  
Cross Sectional ◽  
Non Volatile Memory ◽  
Scale Down ◽  
Overlap Area ◽  
Actual Size

Non-volatile memory processes, in particular the EEPROM process, is one of the hardest processes to be developed and the performance of the NVM products is normally judged from the programming speed and the density of the memory. The programming speed of the EEPROM cell depends critically on Tunnel Oxide Thickness (Xtun), Programming Voltage (Vp), ONO Thickness (Xpp) and Poly to Poly overlap Area (App). However, in this experiment only ONO and tunnel oxide layer are optimized and characterized. Three experiments were setup to improve the programming speed. The first experiment was to scale down the ONO layer thickness and followed by measurement of the threshold voltage and breakdown voltage of the new ONO thickness. The second and third experiments were setup to check the integrity of ONO and tunnel oxide layers respectively. The EEPROM cell was fabricated to observe the cross sectional of ONO and tunnel oxide layer. The characterization work on ONO and tunnel oxide layer to increase the programming speed of the memory cells of a 16k EEPROM device has been carried out. After scaling down the nitride of ONO layer from 160_ to 130_, the Vt program windows are further improved from 4.3V to 4.5V and from 0.7V to 0.9V for program high and program low operations, respectively. In this experiment, 130_ was found to be the best thickness for nitride of ONO layer. The breakdown voltage for ONO at 130_ of nitride thickness is 16.3V. The experiment revealed that the yields of ONO and tunnel oxide layer of the actual size on silicon were achieved at 98.7% and 99.92%, respectively. Key words: ONO; tunnel oxide; EEPROM; threshold voltage; programming speed; polysilicon; control gate; floating gate; select gate

An Investigation of the Native Oxide of Aluminum Alloy 7475-T7651 Using XPS, AES, TEM, EELS, GDOES and RBS

2003 ◽  
Vol 10 (02n03) ◽  
pp. 365-371 ◽  
Author(s):  
S. K. Toh ◽  
D. G. McCulloch ◽  
J. Du Plessis ◽  
P. J. K. Paterson ◽  
A. E. Hughes ◽  
...  
Keyword(s):  
Aluminum Alloy ◽  
Oxide Layer ◽  
Optical Emission ◽  
Oxide Thickness ◽  
Rolling Process ◽  
Thickness Measurement ◽  
Native Oxide ◽  
Emission Spectrometry ◽  
Native Oxide Layer ◽  
Cross Sectional

The native oxide on the rolled aerospace aluminum alloy 7475-T7651 was characterized using a variety of different techniques, including X-ray Photoelectron Spectrometry (XPS), Auger Electron Spectrometry (AES), Transmission Electron Microscopy (TEM), Electron Energy Loss Spectrometry (EELS), Glow Discharge Optical Emission Spectrometry (GDOES), and Rutherford Backscattered Spectrometry (RBS). All techniques revealed that the native oxide layer is magnesium-rich and is probably a mixture of magnesium and aluminum–magnesium oxides.1 The oxide layer was found to be of nonuniform thickness due to the rolling process involved during the manufacture of this sheet alloy; this complicates analysis using techniques which have poor spatial resolution. Direct thickness measurement from cross-sectional TEM reveals an oxide thickness which varies between 125 and 500 nm. This large variation in thickness was also evident from GDOES and AES depth profiles as well as the RBS data. Both XPS and RBS also show evidence for the presence of heavy metals in the oxide.

scholarly journals Impact of Threshold Voltage roll off in Ultra Thin Fully Depleted Silicon on Insulator MOSFET

2020 ◽  
Vol 9 (3) ◽  
pp. 1673-1676
Keyword(s):  
Oxide Layer ◽  
Threshold Voltage ◽  
Oxide Thickness ◽  
Vital Role ◽  
Silicon On Insulator ◽  
Device Performance ◽  
Fully Depleted ◽  
Parasitic Parameter

This article is discussing about threshold voltage roll off effect in Ultra Thin Fully Depleted Silicon on Insulator MOSFET. The device performance is improved due to the reduction in threshold voltage roll off. The thickness of oxide layer is optimized to 2nm which also have a vital role in improvement of device’s throughput. The effect of oxide thickness on parasitic parameter also discussed. Device conductance and transconductance also take in account on simulating the ultra thin fully depleted SOIMOSFET

Improved Device Performance of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMT using a Selective Liquid Phase Oxidation

2002 ◽  
Vol 744 ◽  
Author(s):  
I-H Kang ◽  
J-W Lee ◽  
S-J Kang ◽  
S-J Jo ◽  
S-K In ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Oxide Layer ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Liquid Phase Oxidation ◽  
Device Performance ◽  
Gate Oxide Thickness ◽  
Phase Oxidation ◽  
Rf Performances

ABSTRACTThe DC and RF characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMTs with different gate oxide thickness were investigated and compared with those of Schottky-gate p-HEMT without the gate oxide layer. The oxide layer was implemented by using a liquid phase oxidation technique. It was found that transconductance (gm), threshold voltage and breakdown voltage characteristics of MOS p-HEMTs depended strongly on the gate oxide thickness. The MOS p-HEMTs showed superior DC and RF performances compared with those of GaAs-based MOSFET having oxide/n-GaAs or oxide/InGaAs interface.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

scholarly journals Observation and analysis of diving beetle movements while swimming

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Debo Qi ◽  
Chengchun Zhang ◽  
Jingwei He ◽  
Yongli Yue ◽  
Jing Wang ◽  
...  
Keyword(s):  
Swimming Speed ◽  
High Speed ◽  
Kinematic Model ◽  
Movement Pattern ◽  
Unmanned Vehicles ◽  
Power Stroke ◽  
Cross Sectional ◽  
Motion Data ◽  
The Cross ◽  
Diving Beetle

AbstractThe fast swimming speed, flexible cornering, and high propulsion efficiency of diving beetles are primarily achieved by their two powerful hind legs. Unlike other aquatic organisms, such as turtle, jellyfish, fish and frog et al., the diving beetle could complete retreating motion without turning around, and the turning radius is small for this kind of propulsion mode. However, most bionic vehicles have not contained these advantages, the study about this propulsion method is useful for the design of bionic robots. In this paper, the swimming videos of the diving beetle, including forwarding, turning and retreating, were captured by two synchronized high-speed cameras, and were analyzed via SIMI Motion. The analysis results revealed that the swimming speed initially increased quickly to a maximum at 60% of the power stroke, and then decreased. During the power stroke, the diving beetle stretched its tibias and tarsi, the bristles on both sides of which were shaped like paddles, to maximize the cross-sectional areas against the water to achieve the maximum thrust. During the recovery stroke, the diving beetle rotated its tarsi and folded the bristles to minimize the cross-sectional areas to reduce the drag force. For one turning motion (turn right about 90 degrees), it takes only one motion cycle for the diving beetle to complete it. During the retreating motion, the average acceleration was close to 9.8 m/s2 in the first 25 ms. Finally, based on the diving beetle's hind-leg movement pattern, a kinematic model was constructed, and according to this model and the motion data of the joint angles, the motion trajectories of the hind legs were obtained by using MATLAB. Since the advantages of this propulsion method, it may become a new bionic propulsion method, and the motion data and kinematic model of the hind legs will be helpful in the design of bionic underwater unmanned vehicles.

Experimental investigation and optimization on field shaper structure parameters in magnetic pulse welding

2021 ◽  
pp. 095440542110148
Author(s):  
Yingzi Chen ◽  
Zhiyuan Yang ◽  
Wenxiong Peng ◽  
Huaiqing Zhang
Keyword(s):  
Magnetic Field ◽  
High Speed ◽  
Light Metal ◽  
Magnetic Pulse ◽  
Cross Sectional ◽  
Magnetic Pulse Welding ◽  
Pulse Welding ◽  
Sectional Shape ◽  
Welding System ◽  
The Magnetic Field

Magnetic pulse welding is a high-speed welding technology, which is suitable for welding light metal materials. In the magnetic pulse welding system, the field shaper can increase the service life of the coil and contribute to concentrating the magnetic field in the welding area. Therefore, optimizing the structure of the field shaper can effectively improve the efficiency of the system. This paper analyzed the influence of cross-sectional shape and inner angle of the field shaper on the ability of concentrating magnetic field via COMSOL software. The structural strength of various field shapers was also analyzed in ABAQUS. Simulation results show that the inner edge of the field shaper directly affects the deformation and welding effect of the tube. So, a new shape of field shaper was proposed and the experimental results prove that the new field shaper has better performance than the conventional field shaper.

scholarly journals The Influence of the Axial Rub Added in the Radial Rub on the Wear of the Seal Fins during the High Speed Rub of Labyrinth-Honeycomb Seal

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1997
Author(s):  
Bin Lu ◽  
Haijun Xuan ◽  
Xiaojian Ma ◽  
Fangjun Han ◽  
Weirong Hong ◽  
...  
Keyword(s):  
Wear Rate ◽  
High Speed ◽  
State Of The Art ◽  
Negative Influence ◽  
Axial Thrust ◽  
Cross Sectional ◽  
Honeycomb Seal ◽  
Aero Engine ◽  
Honeycomb Seals ◽  
Clearance Change

Labyrinth-honeycomb seals are a state-of-the-art sealing technology commonly used in aero-engine interstage seal. The undesirable severe rub between the seal fins and the honeycomb due to the clearance change may induce the cracking of the seal fins. A pervious study investigated the wear of the seal fins at different radial incursion rates. However, due to the axial thrust and mounting clearance, the axial rub between the seal fins and the honeycomb may occur. Hence, this paper focuses on the influence of the axial rub added in the radial rub on the wear of the seal fins. The rub tests results, including rubbing forces and temperature, wear rate, worn morphology, cross-sectional morphology and energy dispersive spectroscopy results, are presented and discussed. Overall, the participation of the axial rub leads to higher rubbing forces, temperature, and wear rate. The tribo-layer on the seal fin is thicker and the cracks are more obvious at high axial incursion rate. These phenomena indicate the axial rub has a negative influence on the wear of the seal fins and should be avoided.

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