scholarly journals Hafnium silicate formation during the reaction of β‐cristobalite SiO 2 and monoclinic HfO 2 particles

2020 ◽  
Vol 103 (9) ◽  
pp. 5400-5410
Author(s):  
Jeroen A. Deijkers ◽  
Haydn N.G. Wadley
Keyword(s):  
Hafnium Silicate ◽  
Silicate Formation

Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

2003 ◽  
Vol 425 (1-2) ◽  
pp. 68-71 ◽  
Author(s):  
P Punchaipetch ◽  
G Pant ◽  
M Quevedo-Lopez ◽  
H Zhang ◽  
M El-Bouanani ◽  
...  
Keyword(s):  
Ultra Violet ◽  
Ozone Oxidation ◽  
Hafnium Silicate ◽  
Silicate Formation

Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach

2004 ◽  
Vol 14 (3) ◽  
pp. 391 ◽  
Author(s):  
John L. Roberts ◽  
Paul A. Marshall ◽  
Anthony C. Jones ◽  
Paul R. Chalker ◽  
Jamie F. Bickley ◽  
...  
Keyword(s):  
Single Source ◽  
Hafnium Silicate ◽  
Liquid Injection ◽  
Dual Source

Hafnium interdiffusion studies from hafnium silicate into silicon

2001 ◽  
Vol 79 (25) ◽  
pp. 4192-4194 ◽  
Author(s):  
M. Quevedo-Lopez ◽  
M. El-Bouanani ◽  
S. Addepalli ◽  
J. L. Duggan ◽  
B. E. Gnade ◽  
...  
Keyword(s):  
Hafnium Silicate

scholarly journals Thermochemical behavior of hydrogen in hafnium silicate films on Si

2006 ◽  
Vol 89 (5) ◽  
pp. 051921 ◽  
Author(s):  
C. Driemeier ◽  
J. J. Chambers ◽  
L. Colombo ◽  
I. J. R. Baumvol
Keyword(s):  
Hafnium Silicate

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

scholarly journals Spectroscopic and structural investigation of undoped and Er3+ doped hafnium silicate layers

2014 ◽  
Vol 453 ◽  
pp. 100-106 ◽  
Author(s):  
L. Khomenkova ◽  
Y.-T. An ◽  
D. Khomenkov ◽  
X. Portier ◽  
C. Labbé ◽  
...  
Keyword(s):  
Structural Investigation ◽  
Hafnium Silicate ◽  
Silicate Layers

Study of Hafnium Silicate Treated with NO Gas Annealing

2009 ◽  
Vol 54 (2) ◽  
pp. 637-642
Author(s):  
Dong Chan Suh ◽  
Dae-Hong Ko ◽  
Mann-Ho Cho ◽  
Kwun Bum Chung
Keyword(s):  
Hafnium Silicate

Features of Tri-Calcium Silicate Formation Suppression by Sulphur and Possible Ways of its Preventing

2020 ◽  
Vol 989 ◽  
pp. 221-227 ◽  
Author(s):  
O.Yu. Sheshukov ◽  
I.V. Nekrasov ◽  
Denis K. Egiazaryan
Keyword(s):  
Portland Cement ◽  
Calcium Silicate ◽  
Cement Clinker ◽  
Thermodynamic Process ◽  
Silicate Formation ◽  
Portland Cement Clinker

Synthesis of the portland cement clinker in the presence of a significant amount of SO3 is difficult, due to the tri-calcium silicate formation suppression. Since some technogenic formations contain a significant amount of SO3, it is hard to obtain the portland cement clinker from it. The analysis of the SO3 influence on the clinker-formation thermodynamic process allowed to reveal a number of regularities of their occurrence and to propose a method for the raw mix composition calculating and its preparation, to ensure a stable portland cement clinker synthesis.

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