Fabrication and Characterization of Triple-junction Amorphous Silicon Based Solar Cell with Nanocrystalline Silicon Bottom Cell

Author(s):  
Xunming Deng ◽  
Xinmin Cao ◽  
Yasuaki Ishikawa ◽  
Wenhui Du ◽  
Xiesen Yang ◽  
...  
2016 ◽  
Vol 08 (04) ◽  
pp. 17-21 ◽  
Author(s):  
Hafeez Y. Hafeez ◽  
Zaharaddeen S. ◽  
Ibrahim Saadu ◽  
Bala I. Adam

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.


2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.


2004 ◽  
Vol 808 ◽  
Author(s):  
Rajeewa R. Arya

ABSTRACTAdvances in amorphous silicon solar cell and module development over the past two decades has led to widespread commercial application in consumer and building integrated photovoltaic applications (BIPV). The technology has taken two pathways: (i) superstrate and (ii) substrate. Both pathways have unique advantages over crystalline modules and have demonstrated promising stability and reliability with continuous improvement in performance. Multi-junction modules with amorphous and microcrystalline silicon have demonstrated initial conversion efficiencies in the range of 13%-13.5%.


2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein

2021 ◽  
Vol 1165 ◽  
pp. 113-130
Author(s):  
Romyani Goswami

In photovoltaic system the major challenge is the cost reduction of the solar cell module to compete with those of conventional energy sources. Evolution of solar photovoltaic comprises of several generations through the last sixty years. The first generation solar cells were based on single crystal silicon and bulk polycrystalline Si wafers. The single crystal silicon solar cell has high material cost and the fabrication also requires very high energy. The second generation solar cells were based on thin film fabrication technology. Due to low temperature manufacturing process and less material requirement, remarkable cost reduction was achieved in these solar cells. Among all the thin film technologies amorphous silicon thin film solar cell is in most advanced stage of development and is commercially available. However, an inherent problem of light induced degradation in amorphous silicon hinders the higher efficiency in this kind of cell. The third generation silicon solar cells are based on nano-crystalline and nano-porous materials. Hydrogenated nanocrystalline silicon (nc-Si:H) is becoming a promising material as an absorber layer of solar cell due to its high stability with high Voc. It is also suggested that the cause of high stability and less degradation of certain nc-Si:H films may be due to the improvement of medium range order (MRO) of the films. During the last ten years, organic, polymer, dye sensitized and perovskites materials are also attract much attention of the photovoltaic researchers as the low budget next generation PV material worldwide. Although most important challenge for those organic solar cells in practical applications is the stability issue. In this work nc-Si:H films are successfully deposited at a high deposition rate using a high pressure and a high power by Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) technique. The transmission electron microscopy (TEM) studies show the formations of distinct nano-sized grains in the amorphous tissue with sharp crystalline orientations. Light induced degradation of photoconductivity of nc-Si:H materials have been studied. Single junction solar cells and solar module were successfully fabricated using nanocrystalline silicon as absorber layer. The optimum cell is 7.1 % efficient initially. Improvement in efficiency can be achieved by optimizing the doped layer/interface and using Ag back contact.


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