Contactless characterization of microwave integrated circuits by device internal indirect electro-optic probing

2002 ◽  
Author(s):  
F. Taenzler ◽  
T. Novak ◽  
E. Kubalek
Keyword(s):  
Integrated Circuits ◽  
Microwave Integrated Circuits ◽  
Electro Optic

Characterization of GaAs integrated circuits by direct electro-optic sampling

1985 ◽  
Author(s):  
K.J. Weingarten ◽  
M.J.W. Rodwell ◽  
J.L. Freeman ◽  
S.K. Diamond ◽  
D.M. Bloom
Keyword(s):  
Integrated Circuits ◽  
Electro Optic

Design and characterization of an integrated microwave generator for BIST applications

2014 ◽  
Vol 6 (2) ◽  
pp. 195-200 ◽  
Author(s):  
Imene Lahbib ◽  
Mohamed Aziz Doukkali ◽  
Philippe Descamps ◽  
Patrice Gamand ◽  
Christophe Kelma ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Signal Generator ◽  
Test Method ◽  
Microwave Integrated Circuits ◽  
Cost Measurement ◽  
Bicmos Process ◽  
On Chip ◽  
Rf Signal

This paper presents a circuit architecture for a new integrated on chip test method for microwave circuits. The proposed built-in-self-test (BIST) cell targets a direct low-cost measurement technique of the gain and the 1 dB input compression point (CP1) of a K-band satellite receiver in the 18–22 GHz frequency bandwidth. A signal generator at the radiofrequency (RF) front end input of the device under test (DUT) has been integrated on the same chip. To inject this RF signal, a loopback technique has been used and the design has been accommodated for it. This paper focuses on the design of the most sensitive block of the BIST circuit, i.e. the RF signal generator. This circuit, fabricated in a SIGe:C BiCMOS process, consumes 10 mA. It presents a dynamic power range of 17 dB (−41; −24 dBm) and operates in a frequency range of 5.6 GHz (17.5; 23 GHz). This BIST circuit gives new perspectives in terms of test strategy, cost reduction, and measurement accuracy for microwave-integrated circuits and could be adapted for mm-wave circuits.

LINC Method for MMIC Power Amplifier Linearization

2019 ◽  
Vol 12 (5) ◽  
pp. 402-407
Author(s):  
Said Elkhaldi ◽  
Naima Amar Touhami ◽  
Mohamed Aghoutane ◽  
Taj-Eddin Elhamadi
Keyword(s):  
Integrated Circuits ◽  
Power Amplifier ◽  
High Speed ◽  
High Efficiency ◽  
Microwave Integrated Circuits ◽  
Third Order ◽  
Monolithic Microwave Integrated Circuits ◽  
Amplifier Linearization ◽  
Nonlinear Components

Background: This article proposes the design and implementation of a MMIC (monolithic microwave integrated circuits) Power amplifier using the ED02AH process. Methods: The MMIC ED02AH technology have been developed specifically for microwave applications up to millimeter waves, and for high-speed digital circuits. The use of a single branch of a power amplifier can produce high distortion. In the present paper, the Linear amplification with nonlinear components (LINC) method is introduced and applied as a solution to linearize the power amplifier, it can simultaneously provide high efficiency and high linearity. To validate the proposed approach, the design and characterization of a 5.25 GHz LINC Power Amplifier on MMIC technology is presented. Results: Good results have been achieved, and an improvement of about 37.50 dBc and 59 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz. Conclusion: As a result of this method, we can reduce the Carrier Power to Third-Order Intermodulation Distortion Power Ratio. Excellent linearization is obtained almost 37.6 dBc for Δlower C/I and 58.8 dBc for Δupper C/I.

Electro-optic S-parameter and electric-field profiling measurement of microwave integrated circuits

1999 ◽  
Vol 146 (3) ◽  
pp. 117-122 ◽  
Author(s):  
R.A. Dudley ◽  
A.G. Roddie ◽  
T. Krems ◽  
A.D. Gifford ◽  
D.J. Bannister ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electric Field ◽  
Microwave Integrated Circuits ◽  
S Parameter ◽  
Electro Optic

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

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