Electro-optic S-parameter and electric-field profiling measurement of microwave integrated circuits

1999 ◽  
Vol 146 (3) ◽  
pp. 117-122 ◽  
Author(s):  
R.A. Dudley ◽  
A.G. Roddie ◽  
T. Krems ◽  
A.D. Gifford ◽  
D.J. Bannister ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electric Field ◽  
Microwave Integrated Circuits ◽  
S Parameter ◽  
Electro Optic

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

scholarly journals Electro-Optic Control of Lithium Niobate Bulk Whispering Gallery Resonators: Analysis of the Distribution of Externally Applied Electric Fields

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 298
Author(s):  
Yannick Minet ◽  
Hans Zappe ◽  
Ingo Breunig ◽  
Karsten Buse
Keyword(s):  
Lithium Niobate ◽  
Electric Field ◽  
Electric Fields ◽  
Frequency Comb ◽  
Parametric Oscillation ◽  
Pockels Effect ◽  
Optical Mode ◽  
Cylindrical Resonator ◽  
Whispering Gallery ◽  
Electro Optic

Whispering gallery resonators made out of lithium niobate allow for optical parametric oscillation and frequency comb generation employing the outstanding second-order nonlinear-optical properties of this material. An important knob to tune and control these processes is, e.g., the linear electro-optic effect, the Pockels effect via externally applied electric fields. Due to the shape of the resonators a precise prediction of the electric field strength that affects the optical mode is non-trivial. Here, we study the average strength of the electric field in z-direction in the region of the optical mode for different configurations and geometries of lithium niobate whispering gallery resonators with the help of the finite element method. We find that in some configurations almost 100% is present in the cavity compared to the ideal case of a cylindrical resonator. Even in the case of a few-mode resonator with a very thin rim we find a strength of 90%. Our results give useful design considerations for future arrangements that may benefit from the strong electro-optic effect in bulk whispering gallery resonators made out of lithium niobate.

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