Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width

2011 ◽  
Author(s):  
KahHou Chan ◽  
Brahim Benbakhti ◽  
Craig Riddet ◽  
Jeremy Watling ◽  
Asen Asenov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well ◽  
Gate Length ◽  
20 Nm

Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET

2012 ◽  
Vol 11 (4) ◽  
pp. 808-817 ◽  
Author(s):  
Brahim Benbakhti ◽  
Antonio Martinez ◽  
Karol Kalna ◽  
Geert Hellings ◽  
Geert Eneman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Simulation Study ◽  
Gate Length ◽  
20 Nm

Lightly doped and compensated quantum well: A Monte Carlo simulation

1989 ◽  
Vol 39 (14) ◽  
pp. 10101-10107 ◽  
Author(s):  
E. A. de Andrada e Silva ◽  
I. C. da Cunha Lima
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well

Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well

1992 ◽  
Vol 7 (1) ◽  
pp. 86-91 ◽  
Author(s):  
R W Kelsall ◽  
R A Abram ◽  
W Batty ◽  
E P O'Reilly
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well ◽  
Strained Layer

Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation

2006 ◽  
Vol 15 (3) ◽  
pp. 654-658 ◽  
Author(s):  
Kong Ling-Gang ◽  
Liu Xiao-Yan ◽  
Du Gang ◽  
Wang Yi ◽  
Kang Jin-Feng ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport
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