Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

1993 ◽  
Vol 73 (2) ◽  
pp. 804-812 ◽  
Author(s):  
P. Dollfus ◽  
C. Bru ◽  
P. Hesto
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Physical Limitations

scholarly journals Scaling of pHEMTs to Decanano Dimensions

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
K. Kalna ◽  
A. Asenov ◽  
K. Elgaid ◽  
I. Thayne
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Limiting Factor ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

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