Monte Carlo simulation of gain compression effects in GRINSCH quantum well laser structures

1994 ◽  
Vol 30 (11) ◽  
pp. 2435-2442 ◽  
Author(s):  
Y. Lam ◽  
J. Singh
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well ◽  
Gain Compression ◽  
Quantum Well Laser ◽  
Compression Effects

Lightly doped and compensated quantum well: A Monte Carlo simulation

1989 ◽  
Vol 39 (14) ◽  
pp. 10101-10107 ◽  
Author(s):  
E. A. de Andrada e Silva ◽  
I. C. da Cunha Lima
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well

TUNNEL INJECTION LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 847-866
Author(s):  
PALLAB BHATTACHARYA
Keyword(s):  
Quantum Well ◽  
High Frequency ◽  
Auger Recombination ◽  
Injection Laser ◽  
Gain Compression ◽  
Carrier Heating ◽  
Hot Carrier ◽  
Quantum Well Laser ◽  
Tunnel Injection ◽  
Carrier Population

Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting device — a tunnel injection laser — is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs — and InP — based heterostructure systems.

Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well

1992 ◽  
Vol 7 (1) ◽  
pp. 86-91 ◽  
Author(s):  
R W Kelsall ◽  
R A Abram ◽  
W Batty ◽  
E P O'Reilly
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Well ◽  
Strained Layer
Sign in / Sign up

Export Citation Format

Share Document