Dry etching method using double-layered etching mask for modulating shape of deep-etched quartz surface

2011 ◽  
Author(s):  
T. Abe ◽  
Y. Itasaka
Keyword(s):  
Dry Etching ◽  
Quartz Surface ◽  
Etching Method ◽  
Etching Mask

Realization of Silicon Nitride Template for Nanoimprint: A First Result

2007 ◽  
Vol 121-123 ◽  
pp. 669-672 ◽  
Author(s):  
Ze Wen Liu ◽  
Tian Ruo Zhang ◽  
Li Tian Liu ◽  
Zhi Jian Li
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Wafer ◽  
Silicon Oxide ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Method ◽  
Etching Mask ◽  
P Type

A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines as RIE dry etching mask, silicon nitride template of 100nm width with steep sidewalls is successfully realized.

Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

2005 ◽  
Vol 44 (12) ◽  
pp. 2377 ◽  
Author(s):  
Lin Pang ◽  
Maziar Nezhad ◽  
Uriel Levy ◽  
Chia-Ho Tsai ◽  
Yeshaiahu Fainman
Keyword(s):  
Dry Etching ◽  
Form Birefringence ◽  
Etching Mask

New Dry Etching Method for the Fabrication of InP/InGaAs Quantum Wires

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L252-L254 ◽  
Author(s):  
Jean-Noël Patillon ◽  
Charlotte Jay ◽  
Claude Delalande ◽  
Michel Iost ◽  
Jean-Pierre Andre ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Dry Etching ◽  
Etching Method

Accurate Dry Etching with Fluorinated Gas for Two-dimensional Si Photonic Crystal

2000 ◽  
Vol 637 ◽  
Author(s):  
Chiharu Takahashi ◽  
Jun-Ichi Takahashi ◽  
Masaya Notomi ◽  
Itaru Yokohama
Keyword(s):  
Photonic Crystal ◽  
Room Temperature ◽  
High Selectivity ◽  
Photonic Band Gap ◽  
Electronic Devices ◽  
Dry Etching ◽  
Two Dimensional ◽  
Ecr Plasma ◽  
Etching Mask ◽  
Photonic Band

AbstractAnisortopic Si dry etching is usually carried out with chlorinated gases for electronic devices such as Si-LSIs. We had another look at Si dry etching with fluorinated gases in order to obtain an ideal air hole for two-dimensional Si photonic crystal. We simulated vertical Si etching, and showed the possibility that single crystal Si can be etched vertically with high selectivity to the etching mask using fluorinated gases. We investigated ECR etching with an SF6-CF4 mixture, and vertical Si etching was achieved at room temperature. High Si/Ni selectivity above 100 was also obtained. Two-dimensional Si photonic crystal with a photonic band gap between 1.25 and 1.51 μm was produced using SF6-CF4 ECR plasma and a thin Ni mask.

PFC-Free Dry Etching Method for Si Using Narrow-Gap VHF Plasma at Subatmospheric Pressure

2010 ◽  
Vol 157 (2) ◽  
pp. D85 ◽  
Author(s):  
Hiromasa Ohmi ◽  
Kazuya Kishimoto ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake
Keyword(s):  
Dry Etching ◽  
Narrow Gap ◽  
Subatmospheric Pressure ◽  
Etching Method

Alignment and Use of Self-Assembled Peptide Nanotubes as Dry-Etching Mask

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FF13 ◽  
Author(s):  
Karsten B. Andersen ◽  
Jaime Castillo-León ◽  
Tanya Bakmand ◽  
Winnie E. Svendsen
Keyword(s):  
Dry Etching ◽  
Use Of Self ◽  
Peptide Nanotubes ◽  
Etching Mask ◽  
Self Assembled

4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask

2017 ◽  
Vol 897 ◽  
pp. 371-374 ◽  
Author(s):  
Tian Xiang Dai ◽  
Z. Mohammadi ◽  
Stephen A.O. Russell ◽  
Craig A. Fisher ◽  
Michael R. Jennings ◽  
...  
Keyword(s):  
Dry Etching ◽  
Etching Process ◽  
Trench Structure ◽  
Etching Mask ◽  
Etching Parameters

Trench structure etching is one of the most important processes for the fabrication of 4H-SiC Trench MOSFETs. This paper introduced Al2O3 as an etching mask for the fabrication of trench structures. The effect of dry etching parameters to the shape of trench structures were studied systematically. Micro trenches were successfully eliminated from trench structure etching process and preliminary trench MOSFET test structures were fabricated and characterized.

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures

2010 ◽  
Vol 645-648 ◽  
pp. 841-844 ◽  
Author(s):  
Manuel Hofer ◽  
Thomas Stauden ◽  
Ivo W. Rangelow ◽  
Jörg Pezoldt
Keyword(s):  
Electron Beam ◽  
Crystallographic Orientation ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Dry Etching ◽  
Hydrogen Silsesquioxane ◽  
Free Standing ◽  
Feature Size ◽  
Etching Mask ◽  
Negative Tone

In this work nanostructures based on a 30 nm thick 3C-SiC (100) heteroepitaxially grown on Si(100) are demonstrated. They consist of free standing nanoresonators with dimensions below 50 nm. The free standing nanostructures and resonators were defined by electron beam lithography using hydrogen silsesquioxane (HSQ) as a negative tone e-beam resist acting as a selective etching mask during the anisotropic and isotropic dry etching. The influences of the proximity effect, the crystallographic orientation, the angle of exposing on the feature size are highlighted.

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