ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.
Progress in the fabrication of high-aspect-ratio zone plates by soft x-ray lithography