Tunnel Junctions With Yttrium Oxide Barrier and Various Ferromagnetic Electrodes

2004 ◽  
Vol 40 (4) ◽  
pp. 2296-2298 ◽  
Author(s):  
T. Dimopoulos ◽  
G. Gieres ◽  
S. Colis ◽  
R. Lopez ◽  
M. Vieth ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Tunnel Junctions ◽  
Ferromagnetic Electrodes ◽  
Oxide Barrier

Magnetic tunnel junctions with yttrium oxide barrier

2003 ◽  
Vol 83 (16) ◽  
pp. 3338-3340 ◽  
Author(s):  
T. Dimopoulos ◽  
G. Gieres ◽  
S. Colis ◽  
J. Wecker ◽  
Y. Luo ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Oxide Barrier

Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes

2000 ◽  
Vol 77 (2) ◽  
pp. 283-285 ◽  
Author(s):  
Xiu-Feng Han ◽  
Mikihiko Oogane ◽  
Hitoshi Kubota ◽  
Yasuo Ando ◽  
Terunobu Miyazaki
Keyword(s):  
Tunnel Junctions ◽  
Ferromagnetic Electrodes

Low‐noise 115‐GHz mixing in superconducting oxide‐barrier tunnel junctions

1979 ◽  
Vol 34 (5) ◽  
pp. 347-349 ◽  
Author(s):  
G. J. Dolan ◽  
T. G. Phillips ◽  
D. P. Woody
Keyword(s):  
Tunnel Junctions ◽  
Low Noise ◽  
Oxide Barrier

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

Complex magnetic response in magnetic tunnel junctions determined via magnetic and transport measurements

2002 ◽  
Vol 746 ◽  
Author(s):  
R. Guerrero ◽  
V. V. Pryadun ◽  
F. G. Aliev ◽  
R. Villar ◽  
J. L. Martinez ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Tunnel Junctions ◽  
Ac Susceptibility ◽  
Low Frequency ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Response ◽  
Magnetization Dynamics ◽  
Dc Magnetization ◽  
Ferromagnetic Electrodes ◽  
Ac Magnetization

We have studied the low frequency complex magnetization dynamics in Co/Al2O3/Ni80Fe20 magnetic tunnel junctions (MTJs) at temperatures between 4.2K and 300K. The measurements were carried out by using two different experimental techniques. The first method probes directly magnetic properties via DC magnetization and AC susceptibility, while the second one measures AC magnetization dynamics of the ferromagnetic electrodes near the cross area, which is related to the tunnelling resistance.

Investigation of niobium oxide-barrier tunnel junctions for use in microwave receiving devices

Physica B+C ◽  
1982 ◽  
Vol 109-110 ◽  
pp. 2064-2066 ◽  
Author(s):  
A.N. Vystavkin ◽  
V.N. Gubankov ◽  
K.I. Konstantinyan ◽  
V.P. Koshelets ◽  
Yu.V. Obukhov
Keyword(s):  
Niobium Oxide ◽  
Tunnel Junctions ◽  
Oxide Barrier

Graphene tunnel junctions with aluminum oxide barrier

2016 ◽  
Vol 120 (16) ◽  
pp. 164505 ◽  
Author(s):  
Ying Feng ◽  
Daniel J. Trainer ◽  
Ke Chen
Keyword(s):  
Aluminum Oxide ◽  
Tunnel Junctions ◽  
Oxide Barrier
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