Graphene tunnel junctions with aluminum oxide barrier

2016 ◽  
Vol 120 (16) ◽  
pp. 164505 ◽  
Author(s):  
Ying Feng ◽  
Daniel J. Trainer ◽  
Ke Chen
Keyword(s):  
Aluminum Oxide ◽  
Tunnel Junctions ◽  
Oxide Barrier

Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition

2001 ◽  
Vol 79 (19) ◽  
pp. 3158-3160 ◽  
Author(s):  
J. Carrey ◽  
K. Bouzehouane ◽  
J.-M. George ◽  
C. Ceneray ◽  
A. Fert ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Aluminum Oxide ◽  
Atomic Force Microscopy Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Analysis ◽  
Oxide Barrier

Enhanced Aluminum Properties by Means of Precise Droplet Deposition

1999 ◽  
Vol 122 (3) ◽  
pp. 484-493 ◽  
Author(s):  
Melissa Orme ◽  
Robert F. Smith
Keyword(s):  
Grain Size ◽  
Aluminum Oxide ◽  
Molten Aluminum ◽  
Mechanical Analysis ◽  
Droplet Deposition ◽  
Average Grain Size ◽  
Aluminum Droplets ◽  
Integrated Operation ◽  
Oxide Barrier ◽  
Droplet Stream

The use of molten aluminum droplets is investigated for potential application to precision droplet-based net-form manufacturing (PDM). In the proposed application, final structural components are made from the raw stock in one integrated operation by depositing molten metal droplets, layer after layer, via computer information. This work investigates the feasibility of the proposed technology by investigating the issues associated with generating molten aluminum droplets from capillary stream break-up, and examining the mechanical characteristics of the fabricated aluminum components. New results are presented which illustrate the generation of stable streams of molten aluminum droplets at rates of 24,000 droplets/second for a droplet stream speed of 10.9 m/s, corresponding to throughput rates of 2.3×10−4 kg/s (1.85 lb./hour). The droplets travel 2,500 droplet diameters in an inert environment before impingement with the substrate. Microstructural images are completely devoid of splat boundaries, which have been removed by remelting, and the grain size is approximately uniform throughout the field of view of the image that, in most cases presented, contains easily upwards of 30 splats. Also, it has been found that the presence of aluminum oxide in the melt does not influence the average grain size of the component. An oxide barrier however will encapsulate each grain if the oxides are not removed by filtration in the pre-jetting stage. The presence of aluminum oxide in the melt does not prohibit the removal of the splat boundaries. Mechanical analysis shows that fabrication with molten aluminum droplet deposition results in a 30 percent increase in ultimate tensile strength compared to the raw ingot stock. [S1087-1357(00)02402-3]

Tunnel Junctions With Yttrium Oxide Barrier and Various Ferromagnetic Electrodes

2004 ◽  
Vol 40 (4) ◽  
pp. 2296-2298 ◽  
Author(s):  
T. Dimopoulos ◽  
G. Gieres ◽  
S. Colis ◽  
R. Lopez ◽  
M. Vieth ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Tunnel Junctions ◽  
Ferromagnetic Electrodes ◽  
Oxide Barrier

Low‐noise 115‐GHz mixing in superconducting oxide‐barrier tunnel junctions

1979 ◽  
Vol 34 (5) ◽  
pp. 347-349 ◽  
Author(s):  
G. J. Dolan ◽  
T. G. Phillips ◽  
D. P. Woody
Keyword(s):  
Tunnel Junctions ◽  
Low Noise ◽  
Oxide Barrier

Textured Barium Hexaferrite Films on Silicon Substrates with Aluminum Oxide and Titanium Oxide Barrier Layers

2021 ◽  
Vol 66 (12) ◽  
pp. 1802-1810
Author(s):  
V. G. Kostishin ◽  
A. Yu. Mironovich ◽  
A. V. Timofeev ◽  
R. I. Shakirzyanov ◽  
I. M. Isaev ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Titanium Oxide ◽  
Barium Hexaferrite ◽  
Silicon Substrates ◽  
Barrier Layers ◽  
Oxide Barrier

Removal of Anodic Aluminum Oxide Barrier Layer on Silicon Substrate by using Cl2/BCl3 Neutral Beam Etching

2011 ◽  
Vol 158 (5) ◽  
pp. D254 ◽  
Author(s):  
J. K. Yeon ◽  
W. S. Lim ◽  
J. B. Park ◽  
N. Y. Kwon ◽  
S. I. Kim ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Barrier Layer ◽  
Silicon Substrate ◽  
Anodic Aluminum Oxide ◽  
Neutral Beam ◽  
Anodic Aluminum ◽  
Oxide Barrier ◽  
Neutral Beam Etching

Investigation of niobium oxide-barrier tunnel junctions for use in microwave receiving devices

Physica B+C ◽  
1982 ◽  
Vol 109-110 ◽  
pp. 2064-2066 ◽  
Author(s):  
A.N. Vystavkin ◽  
V.N. Gubankov ◽  
K.I. Konstantinyan ◽  
V.P. Koshelets ◽  
Yu.V. Obukhov
Keyword(s):  
Niobium Oxide ◽  
Tunnel Junctions ◽  
Oxide Barrier
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