Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

1999 ◽  
Vol 17 (4) ◽  
pp. 1413 ◽  
Author(s):  
Yu. A. Pashkin ◽  
J. P. Pekola ◽  
L. S. Kuzmin
Keyword(s):  
Chromium Oxide ◽  
Tunnel Junctions ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Oxide Barrier ◽  
Fabrication And Characterization ◽  
Electron Transistors

Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)

1996 ◽  
Author(s):  
Jun-ichi SHIRAKASHI ◽  
Masami ISHII ◽  
Kazuhiko MATSUMOTO Naruhisa MIURA ◽  
Makoto KONAGAI
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Fabrication And Characterization ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel junctions by thermal oxidation

1998 ◽  
Vol 83 (10) ◽  
pp. 5567-5569 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Kazuhiko Matsumoto ◽  
Naruhisa Miura ◽  
Makoto Konagai
Keyword(s):  
Thermal Oxidation ◽  
Tunnel Junctions ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single electron transistors with hydrogen treatment of ALD SiO2in nanoscale metal–insulator–metal tunnel junctions

2017 ◽  
Vol 28 (21) ◽  
pp. 215203 ◽  
Author(s):  
Golnaz Karbasian ◽  
Michael S McConnell ◽  
Alexei O Orlov ◽  
Alexei N Nazarov ◽  
Gregory L Snider
Keyword(s):  
Tunnel Junctions ◽  
Single Electron ◽  
Hydrogen Treatment ◽  
Single Electron Transistors ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Electron Transistors

scholarly journals Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Karl A. Walczak ◽  
Paul L. Bergstrom ◽  
Craig R. Friedrich
Keyword(s):  
Incident Light ◽  
Active Regions ◽  
Purple Membrane ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Minimal Impact ◽  
Hybrid Device ◽  
Sensor Platform ◽  
Electron Transistors

This paper reports on the integration of an optical protein with single electron transistors to form a nano-bio-hybrid device for sensing. Bacteriorhodopsin (bR) is an optoelectric protein that translocates a proton across a distance of several nanometers in response to an absorbed photon of incident light. This charge gradient results in a measurable voltage in the dried state. Single electron transistors (SETs) have active regions consisting of one or more quantum islands with a size typically 10 nanometers or less. Integrating bacteriorhodopsin with the gate of a SET provides a device capable of a modulated electrical output in response to optical modulation at the device gate. Modulation of the optoelectric activity of the bR by chemical binding with a targeted environmental antigen can form a direct chemical-to-electrical sensor reducing the size and complexity of fluorescence-based systems. The work resulted in electrical resistance and capacitance characterization of purple membrane containing bR under variable illumination to ensure minimal impact on SET operation. Purple membrane containing bacteriorhodopsin was electrodeposited on the SET gates, and current throughput was well correlated with variable and cyclic illumination. It was confirmed that bR optoelectric activity is capable of driving SETs.

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