Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes

2000 ◽  
Vol 77 (2) ◽  
pp. 283-285 ◽  
Author(s):  
Xiu-Feng Han ◽  
Mikihiko Oogane ◽  
Hitoshi Kubota ◽  
Yasuo Ando ◽  
Terunobu Miyazaki
Keyword(s):  
Tunnel Junctions ◽  
Ferromagnetic Electrodes

Tunnel Junctions With Yttrium Oxide Barrier and Various Ferromagnetic Electrodes

2004 ◽  
Vol 40 (4) ◽  
pp. 2296-2298 ◽  
Author(s):  
T. Dimopoulos ◽  
G. Gieres ◽  
S. Colis ◽  
R. Lopez ◽  
M. Vieth ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Tunnel Junctions ◽  
Ferromagnetic Electrodes ◽  
Oxide Barrier

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

Complex magnetic response in magnetic tunnel junctions determined via magnetic and transport measurements

2002 ◽  
Vol 746 ◽  
Author(s):  
R. Guerrero ◽  
V. V. Pryadun ◽  
F. G. Aliev ◽  
R. Villar ◽  
J. L. Martinez ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Tunnel Junctions ◽  
Ac Susceptibility ◽  
Low Frequency ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Response ◽  
Magnetization Dynamics ◽  
Dc Magnetization ◽  
Ferromagnetic Electrodes ◽  
Ac Magnetization

We have studied the low frequency complex magnetization dynamics in Co/Al2O3/Ni80Fe20 magnetic tunnel junctions (MTJs) at temperatures between 4.2K and 300K. The measurements were carried out by using two different experimental techniques. The first method probes directly magnetic properties via DC magnetization and AC susceptibility, while the second one measures AC magnetization dynamics of the ferromagnetic electrodes near the cross area, which is related to the tunnelling resistance.

scholarly journals Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Maëlis Piquemal-Banci ◽  
Regina Galceran ◽  
Simon M.-M. Dubois ◽  
Victor Zatko ◽  
Marta Galbiati ◽  
...  
Keyword(s):  
Spin Transport ◽  
Tunnel Junctions ◽  
State Of The Art ◽  
Proximity Effects ◽  
Monolayer Graphene ◽  
Ferromagnetic Electrodes ◽  
Number Of Layers ◽  
Strength Of Interaction ◽  
Spin Properties ◽  
Magneto Resistance

Abstract We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal. In particular, by switching the graphene/ferromagnet interaction, spin transport reveals magneto-resistance signal MR > 80% in junctions with low resistance × area products. Descriptions based only on a simple K-point filtering picture (i.e. MR increase with the number of layers) are not sufficient to predict the behavior of our devices. We emphasize that hybridization effects need to be taken into account to fully grasp the spin properties (such as spin dependent density of states) when 2D materials are used as ultimately thin interfaces. While this is only a first demonstration, we thus introduce the fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs.

A theoretical study of magnetoelectronic and switching properties of molecular magnetic tunnel junctions

2016 ◽  
Vol 30 (04) ◽  
pp. 1650017
Author(s):  
V. Soti ◽  
B. Abedi Ravan
Keyword(s):  
Electronic Transport ◽  
First Principles ◽  
Density Functional ◽  
Theoretical Study ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Switching Behavior ◽  
Functional Theory ◽  
Spintronic Devices ◽  
Ferromagnetic Electrodes

Electronic transport and switching properties of molecule-based magnetic tunnel junctions are investigated using the first-principles density functional theory and non-equilibrium Green function methods. As a result of being sandwiched between the ferromagnetic electrodes, a spin-polarization is induced in the nonmagnetic organic atoms. Magnitudes of the spin-polarizations in the trans-polyacetylene, cis-polyacetylene, terphenyl and pentacene chains are calculated and it is suggested that among these the pentacene molecules, because of showing a relatively higher magnetization can theoretically be more appropriate for utilization in spintronic devices. Furthermore, electrical switching capabilities of the junctions are studied and the results reveal that the pentacene junction due to having a larger ON/OFF ratio shows a better switching behavior. Finally, magnetoresistive properties are studied and it is shown that applying torsion can be an effective method to enhance and also adjust magnitudes of the magnetoresistances of the junctions.

Magnetic tunnel junctions using LaSrMnO ferromagnetic electrodes and PbZrTiO3 piezoelectric barrier

2009 ◽  
Vol 24 (10) ◽  
pp. 3065-3072 ◽  
Author(s):  
A.K. Pradhan ◽  
R. Mundle ◽  
R.B. Konda ◽  
O. Yasar ◽  
F. Williams ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Behavior ◽  
Barrier Thickness ◽  
Barrier Potential ◽  
Ferromagnetic Electrodes ◽  
Barrier Region ◽  
Microscopic Studies ◽  
Ferromagnetic Hysteresis

We report on the fabrication and tunneling characteristics of pulsed-laser deposited LaSrMnO (LSMO)/PbZrTiO(PZT)/LSMO/SrTiO3 magnetic tunnel junctions. The trilayer films show magnetic onset at about 360 K with ferromagnetic hysteresis and uniaxial magnetic behavior at room temperature. The microscopic studies show that the effective barrier thickness is reduced due to the presence of defects in the barrier region. Tunneling magnetoresistance measurements were performed on several samples. Our results suggest that the asymmetric deformation of the barrier potential profile induced by the ferroelectric polarization of PZT influences the tunneling characteristics and can be used for electrically controlled readout in quantum computing schemes.

High-Magnetoresistance Tunnel Junctions Using Co75Fe25 Ferromagnetic Electrodes

2000 ◽  
Vol 39 (Part 2, No. 5B) ◽  
pp. L439-L441 ◽  
Author(s):  
Xiu-Feng Han ◽  
Tadaomi Daibou ◽  
Makoto Kamijo ◽  
Kazuya Yaoita ◽  
Hitoshi Kubota ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Ferromagnetic Electrodes
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