Sub-30-nm In₀.8Ga₀.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3045958 ◽

2021 ◽

pp. 1-7

Author(s):

Hyeon-Bhin Jo ◽

Seung-Won Yun ◽

Jun-Gyu Kim ◽

Ji-Min Baek ◽

In-Geun Lee ◽

...

Keyword(s):

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

Download Full-text

High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442711 ◽

2005 ◽

Author(s):

H. Ono ◽

S. Taniguchi ◽

T. Suzuki

Keyword(s):

High Temperatures ◽

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

Electron Velocity ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Cited By ~ 43

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Characterization and Modeling of Microwave Noise in InP/InGaAs Composite Channel High Electron Mobility Transistors (HEMTs)

10.7567/ssdm.2005.i-7-2 ◽

2005 ◽

Author(s):

Yuwei Liu ◽

Hong Wang ◽

Rong Zeng

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors ◽

Microwave Noise

Download Full-text

Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates

Applied Physics Express ◽

10.7567/apex.9.114101 ◽

2016 ◽

Vol 9 (11) ◽

pp. 114101 ◽

Cited By ~ 2

Author(s):

Tomotaka Hosotani ◽

Taiichi Otsuji ◽

Tetsuya Suemitsu

Keyword(s):

Electron Mobility ◽

High Frequency ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Current Applied Physics ◽

10.1016/j.cap.2013.04.003 ◽

2013 ◽

Vol 13 (7) ◽

pp. 1359-1364 ◽

Cited By ~ 4

Author(s):

H. Mosbahi ◽

M. Gassoumi ◽

Imen Saidi ◽

Houcine Mejri ◽

C. Gaquière ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Frequency Characteristics ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Applied Physics Letters ◽

10.1063/1.5102080 ◽

2019 ◽

Vol 115 (7) ◽

pp. 072105 ◽

Cited By ~ 3

Author(s):

Yachao Zhang ◽

Rui Guo ◽

Shengrui Xu ◽

Jincheng Zhang ◽

Shenglei Zhao ◽

...

Keyword(s):

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

Download Full-text

High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

IEEE Transactions on Electron Devices ◽

10.1109/16.641380 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2038-2040 ◽

Cited By ~ 2

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

Download Full-text

New Technologies for Improving the High Frequency Performance of AlGaN/GaN High Electron Mobility Transistors

10.1109/enics.2008.36 ◽

2008 ◽

Cited By ~ 2

Author(s):

J. W. Chung ◽

E. L. Piner ◽

J. C. Roberts ◽

T. Palacios

Keyword(s):

Electron Mobility ◽

High Frequency ◽

New Technologies ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Frequency Performance

Download Full-text

Study of Ohmic contact resistance to Ga[sub (1−X)]In[sub (X)]As/InP composite channel InP high electron mobility transistors for X=35% to X=81%

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589523 ◽

1997 ◽

Vol 15 (5) ◽

pp. 1773 ◽

Cited By ~ 1

Author(s):

J. B. Shealy

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Electron Mobility Transistors

Download Full-text

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2828 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2828-2832 ◽

Cited By ~ 3

Author(s):

Hiroki Sugiyama ◽

Toshihiko Kosugi ◽

Haruki Yokoyama ◽

Koichi Murata ◽

Yasuro Yamane ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Performance ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Organic Vapor ◽

Electron Mobility Transistors ◽

Metal Organic

Download Full-text