Study of Ohmic contact resistance to Ga[sub (1−X)]In[sub (X)]As/InP composite channel InP high electron mobility transistors for X=35% to X=81%

1997 ◽  
Vol 15 (5) ◽  
pp. 1773 ◽  
Author(s):  
J. B. Shealy
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
Electron Mobility Transistors

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

2007 ◽  
Vol 91 (23) ◽  
pp. 232103 ◽  
Author(s):  
Man Hoi Wong ◽  
Yi Pei ◽  
Tomás Palacios ◽  
Likun Shen ◽  
Arpan Chakraborty ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 48 (11) ◽  
pp. 111003
Author(s):  
Chung Yu Lu ◽  
Oliver Hilt ◽  
Richard Lossy ◽  
Nidhi Chaturvedi ◽  
Wilfred John ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Cap Layer
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